SIZ710DT-T1-GE3

SIZ710DT-T1-GE3
Mfr. #:
SIZ710DT-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET 2N-CH 20V 16A POWERPAIR
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIZ710DT-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIZ710DT-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Arrays
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SIZ710DT-GE3
Montageart
SMD/SMT
Paket-Koffer
6-PowerPair
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
6-PowerPair
Aufbau
Dual
FET-Typ
2 N-Channel (Half Bridge)
Leistung max
27W, 48W
Transistor-Typ
2 N-Channel
Drain-zu-Source-Spannung-Vdss
20V
Eingangskapazität-Ciss-Vds
820pF @ 10V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
16A, 35A
Rds-On-Max-Id-Vgs
6.8 mOhm @ 19A, 10V
Vgs-th-Max-Id
2.2V @ 250μA
Gate-Lade-Qg-Vgs
18nC @ 10V
Pd-Verlustleistung
27 W 48 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
+/- 20 V
ID-Dauer-Drain-Strom
16 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Vgs-th-Gate-Source-Threshold-Voltage
1 V to 2.2 V
Rds-On-Drain-Source-Widerstand
5.5 mOhms 2.7 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
11.5 nC 38 nC
Vorwärts-Transkonduktanz-Min
45 S 85 S
Tags
SIZ710DT-T, SIZ71, SIZ7, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 20 V 0.0068 Ohm Surface Mount Power MosFet - PowerPAIR 6 x 3.7 mm
***et Europe
Transistor MOSFET Array Dual N-CH 20V 16A/35A 6-Pin PowerPAIR T/R
***ark
MOSFET, DUAL N-CH, 20V, 16A/35A, POWERPAIR; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:35A; Drain Source Voltage Vds, N Channel:20V; On Resistance Rds(on), N Channel:0.0068ohm; Rds(on) Test Voltage Vgs:10V
***ment14 APAC
MOSFET,NN CH,HALF BR,DIO,20V,PPAIR6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:4.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAIR; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):5500µohm; Power Dissipation Pd:4.6W
Dual N-Channel TrenchFET® Power MOSFETs
Vishay Siliconix Dual N-Channl TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Teil # Mfg. Beschreibung Aktie Preis
SIZ710DT-T1-GE3
DISTI # V72:2272_09216120
Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R
RoHS: Compliant
2000
  • 1000:$0.6544
  • 500:$0.7412
  • 250:$0.8087
  • 100:$0.8367
  • 25:$0.9213
  • 10:$1.0236
  • 1:$1.1931
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3CT-ND
Vishay SiliconixMOSFET 2N-CH 20V 16A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3DKR-ND
Vishay SiliconixMOSFET 2N-CH 20V 16A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3TR-ND
Vishay SiliconixMOSFET 2N-CH 20V 16A POWERPAIR
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.6622
SIZ710DT-T1-GE3
DISTI # 30150542
Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R
RoHS: Compliant
2000
  • 1000:$0.6544
  • 500:$0.7412
  • 250:$0.8087
  • 100:$0.8367
  • 25:$0.9213
  • 12:$1.0236
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R (Alt: SIZ710DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
  • 3000:$0.6596
  • 6000:$0.5074
  • 9000:$0.4039
  • 15000:$0.3412
  • 30000:$0.3141
  • 75000:$0.3044
  • 150000:$0.2954
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R (Alt: SIZ710DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€1.2499
  • 6000:€0.8959
  • 12000:€0.7269
  • 18000:€0.6429
  • 30000:€0.6149
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ710DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.6249
  • 6000:$0.6069
  • 12000:$0.5819
  • 18000:$0.5659
  • 30000:$0.5509
SIZ710DT-T1-GE3
DISTI # 83T3536
Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 20V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:20V,On Resistance Rds(on):5500µohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$1.5100
  • 25:$1.2400
  • 50:$1.1000
  • 100:$0.9510
  • 250:$0.8850
  • 500:$0.8180
  • 1000:$0.7190
SIZ710DT-T1-GE3
DISTI # 65T1676
Vishay IntertechnologiesMOSFET, DUAL N-CH, 20V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:20V,On Resistance Rds(on):5500µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V , RoHS Compliant: Yes0
  • 1:$0.6370
  • 3000:$0.6330
  • 6000:$0.6020
  • 12000:$0.5340
SIZ710DT-T1-GE3
DISTI # 781-SIZ710DT-T1-GE3
Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7
RoHS: Compliant
378
  • 1:$1.5100
  • 10:$1.2400
  • 100:$0.9510
  • 500:$0.8180
  • 1000:$0.7190
  • 3000:$0.7170
SIZ710DT-T1-GE3
DISTI # C1S803601344629
Vishay IntertechnologiesMOSFETs2000
  • 250:$0.8087
  • 100:$0.8367
  • 25:$0.9213
  • 10:$1.0236
SIZ710DT-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7Americas -
    SIZ710DT-T1-GE3
    DISTI # 2129099
    Vishay IntertechnologiesMOSFET, DUAL N-CH, 20V, 16A/35A, POWERPA
    RoHS: Compliant
    0
    • 3000:£0.6370
    Bild Teil # Beschreibung
    SIZ710DT-T1-GE3

    Mfr.#: SIZ710DT-T1-GE3

    OMO.#: OMO-SIZ710DT-T1-GE3

    MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7
    SIZ710DT-T1

    Mfr.#: SIZ710DT-T1

    OMO.#: OMO-SIZ710DT-T1-1190

    Neu und Original
    SIZ710DT

    Mfr.#: SIZ710DT

    OMO.#: OMO-SIZ710DT-1190

    Neu und Original
    SIZ710DT-T1-GE

    Mfr.#: SIZ710DT-T1-GE

    OMO.#: OMO-SIZ710DT-T1-GE-1190

    Neu und Original
    SIZ710DT-T1-GE3

    Mfr.#: SIZ710DT-T1-GE3

    OMO.#: OMO-SIZ710DT-T1-GE3-VISHAY

    MOSFET 2N-CH 20V 16A POWERPAIR
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4000
    Menge eingeben:
    Der aktuelle Preis von SIZ710DT-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,81 $
    0,81 $
    10
    0,77 $
    7,69 $
    100
    0,73 $
    72,90 $
    500
    0,69 $
    344,25 $
    1000
    0,65 $
    648,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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