HGTD1N120BNS9A

HGTD1N120BNS9A
Mfr. #:
HGTD1N120BNS9A
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTD1N120BNS9A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
E
Technologie:
Si
Paket / Koffer:
TO-252AA-3
Montageart:
SMD/SMT
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
2.5 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
5.3 A
Pd - Verlustleistung:
60 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
HGTD1N120BNS
Verpackung:
Spule
Kontinuierlicher Kollektorstrom Ic Max:
5.3 A
Höhe:
2.3 mm
Länge:
6.6 mm
Breite:
6.1 mm
Marke:
ON Semiconductor / Fairchild
Kontinuierlicher Kollektorstrom:
5.3 A
Gate-Emitter-Leckstrom:
+/- 250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
2500
Unterkategorie:
IGBTs
Gewichtseinheit:
0.009184 oz
Tags
HGTD1N120BN, HGTD1N, HGTD1, HGTD, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 1200V 5.3A 60000mW 3-Pin(2+Tab) DPAK T/R
***ure Electronics
HGTD1N120BNS9A Series N-Channel 1200 V 5.3 A Surface Mount IGBT - TO-252AA
***ark
Transistor; Transistor Type:IGBT; DC Collector Current:5.3A; Collector Emitter Voltage, Vces:1200V; Power Dissipation, Pd:60W; Collector Emitter Voltage, V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; No. of Pins:3 ;RoHS Compliant: Yes
***rchild Semiconductor
HGTD1N120BNS9A is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
Teil # Mfg. Beschreibung Aktie Preis
HGTD1N120BNS9A
DISTI # V72:2272_06301347
ON SemiconductorNPTPIGBT TO252 5.3A 1200V2512
  • 1000:$0.6572
  • 500:$0.8194
  • 250:$0.8848
  • 100:$0.9194
  • 25:$1.1703
  • 10:$1.1721
  • 1:$1.3556
HGTD1N120BNS9A
DISTI # HGTD1N120BNS9ACT-ND
ON SemiconductorIGBT 1200V 5.3A 60W TO252AA
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6782In Stock
  • 1000:$0.7524
  • 500:$0.9468
  • 100:$1.1412
  • 10:$1.4570
  • 1:$1.6200
HGTD1N120BNS9A
DISTI # HGTD1N120BNS9ADKR-ND
ON SemiconductorIGBT 1200V 5.3A 60W TO252AA
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6782In Stock
  • 1000:$0.7524
  • 500:$0.9468
  • 100:$1.1412
  • 10:$1.4570
  • 1:$1.6200
HGTD1N120BNS9A
DISTI # HGTD1N120BNS9ATR-ND
ON SemiconductorIGBT 1200V 5.3A 60W TO252AA
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
5000In Stock
  • 5000:$0.6518
  • 2500:$0.6832
HGTD1N120BNS9A
DISTI # 27193709
ON SemiconductorNPTPIGBT TO252 5.3A 1200V2512
  • 1000:$0.6572
  • 500:$0.8194
  • 250:$0.8848
  • 100:$0.9194
  • 25:$1.1704
  • 13:$1.1721
HGTD1N120BNS9A
DISTI # HGTD1N120BNS9A
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 5.3A 3-Pin(2+Tab) DPAK T/R (Alt: HGTD1N120BNS9A)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 2500
  • 2500:$0.5980
  • 5000:$0.5750
  • 7500:$0.5537
  • 12500:$0.5339
  • 25000:$0.5155
  • 62500:$0.4983
  • 125000:$0.4902
HGTD1N120BNS9A
DISTI # HGTD1N120BNS9A
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 5.3A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: HGTD1N120BNS9A)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.5359
  • 5000:$0.5329
  • 10000:$0.5259
  • 15000:$0.5189
  • 25000:$0.5059
HGTD1N120BNS9A
DISTI # 31Y1823
ON SemiconductorIGBT Single Transistor, 5.3 A, 2.5 V, 60 W, 1.2 kV, TO-252AA, 3 , RoHS Compliant: Yes21277
  • 1:$1.5600
  • 10:$1.3300
  • 25:$1.2300
  • 50:$1.1300
  • 100:$1.0300
  • 250:$0.9770
  • 500:$0.9200
  • 1000:$0.7360
HGTD1N120BNS9A
DISTI # 82C5178
ON SemiconductorSINGLE IGBT, 1.2KV, 5.3A, FULL REEL,DC Collector Current:5.3A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:60W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C, RoHS Compliant: Yes0
  • 1:$0.6340
  • 2500:$0.6300
  • 10000:$0.6070
  • 25000:$0.5890
HGTD1N120BNS9A
DISTI # 512-HGTD1N120BNS9A
ON SemiconductorIGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series
RoHS: Compliant
2393
  • 1:$1.4800
  • 10:$1.2600
  • 100:$0.9670
  • 500:$0.8550
  • 1000:$0.6750
  • 2500:$0.5980
  • 10000:$0.5760
HGTD1N120BNS9AFairchild Semiconductor Corporation 1804
    HGTD1N120BNS9AFairchild Semiconductor Corporation 
    RoHS: Not Compliant
    Europe - 46917
      HGTD1N120BNS9A
      DISTI # 2453921
      ON SemiconductorIGBT, SINGLE, 1.2KV, 5.3A, TO-252AA-3
      RoHS: Compliant
      21347
      • 5:£1.1900
      • 25:£1.0800
      • 100:£0.8300
      • 250:£0.7820
      • 500:£0.7330
      HGTD1N120BNS9A
      DISTI # C1S226600689984
      ON SemiconductorTrans IGBT Chip N-CH 1.2KV 5.3A 3-Pin(2+Tab) DPAK T/R
      RoHS: Compliant
      2512
      • 250:$0.8848
      • 100:$0.9194
      • 10:$1.1721
      HGTD1N120BNS9A
      DISTI # C1S541901472166
      ON SemiconductorIGBT Chip
      RoHS: Compliant
      30000
      • 2500:$0.3470
      HGTD1N120BNS9A
      DISTI # 2453921RL
      ON SemiconductorIGBT, SINGLE, 1.2KV, 5.3A, TO-252AA-3
      RoHS: Compliant
      0
      • 1:$2.3500
      • 10:$2.0000
      • 100:$1.5400
      • 500:$1.3600
      • 1000:$1.0800
      • 2500:$0.9470
      • 10000:$0.9120
      HGTD1N120BNS9A
      DISTI # 2453921
      ON SemiconductorIGBT, SINGLE, 1.2KV, 5.3A, TO-252AA-3
      RoHS: Compliant
      21277
      • 1:$2.3500
      • 10:$2.0000
      • 100:$1.5400
      • 500:$1.3600
      • 1000:$1.0800
      • 2500:$0.9470
      • 10000:$0.9120
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1992
      Menge eingeben:
      Der aktuelle Preis von HGTD1N120BNS9A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,48 $
      1,48 $
      10
      1,26 $
      12,60 $
      100
      0,97 $
      96,70 $
      500
      0,86 $
      427,50 $
      1000
      0,68 $
      675,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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