CDM2206-800LR SL

CDM2206-800LR SL
Mfr. #:
CDM2206-800LR SL
Hersteller:
Central Semiconductor
Beschreibung:
MOSFET N-Ch 800V LR FET 6.0A 2.8nC 0.8Ohm
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CDM2206-800LR SL Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CDM2206-800LR SL Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Zentraler Halbleiter
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
6 A
Rds On - Drain-Source-Widerstand:
800 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
24.3 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
110 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
UltraMOS
Verpackung:
Rohr
Serie:
CDM220
Transistortyp:
1 N-Channel
Marke:
Zentraler Halbleiter
Abfallzeit:
25.6 ns
Produktart:
MOSFET
Anstiegszeit:
22.7 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
42.3 ns
Typische Einschaltverzögerungszeit:
9.3 ns
Teil # Aliase:
CDM2206-800LR PBFREE SL
Tags
CDM220, CDM22, CDM2, CDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CxxDM Surface Mount Enhancement-Mode MOSFETs
Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more
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Verfügbarkeit
Aktie:
365
Auf Bestellung:
2348
Menge eingeben:
Der aktuelle Preis von CDM2206-800LR SL dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,67 $
1,67 $
10
1,48 $
14,80 $
100
1,19 $
119,00 $
500
1,04 $
520,00 $
1000
0,86 $
863,00 $
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