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SIR872DP-T1-GE3

SIR872DP-T1-GE3
Mfr. #:
SIR872DP-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 78-SIR622DP-T1-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIR872DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR872DP-T1-GE3 DatasheetSIR872DP-T1-GE3 Datasheet (P4-P6)SIR872DP-T1-GE3 Datasheet (P7-P9)SIR872DP-T1-GE3 Datasheet (P10-P12)SIR872DP-T1-GE3 Datasheet (P13)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8
Handelsname:
TrenchFET, PowerPAK
Höhe:
1.04 mm
Länge:
6.15 mm
Serie:
HERR
Breite:
5.15 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.017870 oz
Tags
SIR872, SIR87, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiR872DP Series N-Channel 150 V 0.0200 Ohm 104 W SMT Mosfet - PowerPAK SO-8
***et
Trans MOSFET N-CH 150V 12.8A 8-Pin PowerPAK SO T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 53.7A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N-CH, 150V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:53.7A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0148ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Teil # Mfg. Beschreibung Aktie Preis
SIR872DP-T1-GE3
DISTI # V99:2348_09216043		Vishay IntertechnologiesTrans MOSFET N-CH 150V 12.8A 8-Pin PowerPAK SO EP
RoHS: Compliant		495
  • 3000:$1.2918
  • 1000:$1.4189
  • 500:$1.6697
  • 100:$2.0524
  • 10:$2.4405
  • 1:$2.6555
SIR872DP-T1-GE3
DISTI # SIR872DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 150V 53.7A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		137In Stock
  • 1000:$1.5170
  • 500:$1.8309
  • 100:$2.3540
  • 10:$2.9290
  • 1:$3.2400
SIR872DP-T1-GE3
DISTI # SIR872DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 150V 53.7A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		137In Stock
  • 1000:$1.5170
  • 500:$1.8309
  • 100:$2.3540
  • 10:$2.9290
  • 1:$3.2400
SIR872DP-T1-GE3
DISTI # SIR872DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 150V 53.7A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$1.3713
SIR872DP-T1-GE3
DISTI # 30574640		Vishay IntertechnologiesTrans MOSFET N-CH 150V 12.8A 8-Pin PowerPAK SO EP
RoHS: Compliant		495
  • 100:$2.0524
  • 10:$2.4405
  • 5:$2.6555
SIR872DP-T1-GE3
DISTI # SIR872DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 150V 12.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR872DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    SIR872DP-T1-GE3
    DISTI # 78-SIR872DP-T1-GE3    		Vishay IntertechnologiesMOSFET 150V 18mOhm@10V 60A N-Ch
    RoHS: Compliant    		0
      SIR872DPT1GE3Vishay Intertechnologies 
      RoHS: Compliant      		Europe - 2550
        SIR872DP-T1-GE3Vishay IntertechnologiesMOSFET 150V 18mOhm@10V 60A N-ChAmericas -
          SIR872DP-T1-GE3
          DISTI # 2283696          		Vishay IntertechnologiesMOSFET, N-CH, 150V, PPAK-SO8
          RoHS: Compliant          		0
          • 1:$4.5500
          • 10:$3.7800
          • 100:$2.9300
          • 500:$2.5700
          • 1000:$2.4600
          • 3000:$2.4400
          SIR872DP-T1-GE3
          DISTI # C1S806001191110          		Vishay IntertechnologiesMOSFETs495
          • 100:$2.0524
          • 10:$2.4405
          • 1:$2.6555
          Bild Teil # Beschreibung
          SIR872DP-T1-GE3

          Mfr.#: SIR872DP-T1-GE3

          OMO.#: OMO-SIR872DP-T1-GE3

          		 MOSFET RECOMMENDED ALT 78-SIR622DP-T1-GE3
          SIR872DP-T1-GE3

          Mfr.#: SIR872DP-T1-GE3

          OMO.#: OMO-SIR872DP-T1-GE3-VISHAY

          		 RF Bipolar Transistors MOSFET 150V 18mOhm@10V 60A N-Ch
          SIR872DP

          Mfr.#: SIR872DP

          OMO.#: OMO-SIR872DP-1190

          		 Neu und Original
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          5500
          Menge eingeben:
          Der aktuelle Preis von SIR872DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          2,86 $
          2,86 $
          10
          2,38 $
          23,80 $
          100
          1,84 $
          184,00 $
          500
          1,61 $
          805,00 $
          1000
          1,33 $
          1 330,00 $
          3000
          1,24 $
          3 720,00 $
          6000
          1,20 $
          7 200,00 $
          9000
          1,15 $
          10 350,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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