GS-065-008-1-L

GS-065-008-1-L
Mfr. #:
GS-065-008-1-L
Hersteller:
GaN Systems
Beschreibung:
MOSFET 650V, 8 A, E-Mode GaN, Engineer Samples
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
GS-065-008-1-L Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
GS-065-008-1-L Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
GaN-Systeme
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
GaN-Si
Montageart:
SMD/SMT
Paket / Koffer:
PDFN-6
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
8 A
Rds On - Drain-Source-Widerstand:
541 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.4 V
Vgs - Gate-Source-Spannung:
- 10 V to 7 V
Qg - Gate-Ladung:
1.5 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
GS-065
Transistortyp:
1 N-Channel
Marke:
GaN-Systeme
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Werkspackungsmenge:
250
Unterkategorie:
MOSFETs
Teil # Aliase:
GS-065-008-1-L-E01-MR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GS-065-0xx 650V Enhancement Mode GaN Transistors
GaN Systems GS-065-0xx 650V Enhancement Mode GaN Transistors allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield.  The GS-065-004-1-L is a bottom-side cooled transistor in a 5×6mm PDFN package that offers low junction-to-case thermal resistance. These features combine to provide very high-efficiency power switching.
Bild Teil # Beschreibung
LMG1205YFXR

Mfr.#: LMG1205YFXR

OMO.#: OMO-LMG1205YFXR

Gate Drivers 5A 100V HALF-BRIDGE GATE DRIVER FOR ENH
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR

MOSFET 650V Enhancement Mode Transistor
GS66506T-E01-MR

Mfr.#: GS66506T-E01-MR

OMO.#: OMO-GS66506T-E01-MR

MOSFET 650V 22A E-Mode GaN
GS66504B-E01-MR

Mfr.#: GS66504B-E01-MR

OMO.#: OMO-GS66504B-E01-MR

MOSFET 650V 15A E-Mode GaN
SN74LVC1G08DCKR

Mfr.#: SN74LVC1G08DCKR

OMO.#: OMO-SN74LVC1G08DCKR

Logic Gates Single 2-Input Pos
NC7SZ00P5X

Mfr.#: NC7SZ00P5X

OMO.#: OMO-NC7SZ00P5X

Logic Gates UHS 2-Inp NAND Gate
DSC1001DI2-006.7800

Mfr.#: DSC1001DI2-006.7800

OMO.#: OMO-DSC1001DI2-006-7800-MICROCHIP-TECHNOLOGY

Oscillator MEMS 6.78MHz ±25ppm (Stability) 15pF CMOS 55% 1.8V/2.5V/3.3V Automotive 4-Pin QFN SMD Tube
SN74LVC1G08DCKR

Mfr.#: SN74LVC1G08DCKR

OMO.#: OMO-SN74LVC1G08DCKR-TEXAS-INSTRUMENTS

Logic Gates Single 2-Input Pos
GS66502B-E01-MR

Mfr.#: GS66502B-E01-MR

OMO.#: OMO-GS66502B-E01-MR-1190

MOSFET 650V Enhancement Mode Transisto
GS66506T-E01-MR

Mfr.#: GS66506T-E01-MR

OMO.#: OMO-GS66506T-E01-MR-1190

MOSFET 650V 22A E-Mode GaN
Verfügbarkeit
Aktie:
506
Auf Bestellung:
2489
Menge eingeben:
Der aktuelle Preis von GS-065-008-1-L dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
5,79 $
5,79 $
10
4,65 $
46,50 $
100
4,24 $
424,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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