SIZ300DT-T1-GE3

SIZ300DT-T1-GE3
Mfr. #:
SIZ300DT-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET 2N-CH 30V 11A POWERPAIR
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIZ300DT-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIZ300DT-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Arrays
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SIZ300DT-GE3
Montageart
SMD/SMT
Paket-Koffer
8-PowerWDFN
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
8-PowerPairR
Aufbau
Dual
FET-Typ
2 N-Channel (Half Bridge)
Leistung max
16.7W, 31W
Transistor-Typ
2 N-Channel
Drain-zu-Source-Spannung-Vdss
30V
Eingangskapazität-Ciss-Vds
400pF @ 15V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
11A, 28A
Rds-On-Max-Id-Vgs
24 mOhm @ 9.8A, 10V
Vgs-th-Max-Id
2.4V @ 250μA
Gate-Lade-Qg-Vgs
12nC @ 10V
Pd-Verlustleistung
3.7 W 4.2 W
Abfallzeit
10 ns 40 ns
Anstiegszeit
45 ns 80 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
9.8 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
2.4 V
Rds-On-Drain-Source-Widerstand
20 mOhms 9 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
7.4 nC 14.2 nC
Vorwärts-Transkonduktanz-Min
30 S
Tags
SIZ30, SiZ3, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R
***et
Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR T/R
***nell
MOSFET, DUAL N CH, 30V, 11A, POWERPAIR-8
***i-Key
MOSFET 2N-CH 30V 11A POWERPAIR
***
DUAL N-CHANNEL 30-V (D-S)
***ark
MOSFET, DUAL N CH, 30V, 11A, POWERPAIR-8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:16.7W; Operating Temperature Range:-55°C to +150°C; No. of Pins:8; Continuous Drain Current Id, N Channel:11A;RoHS Compliant: Yes
***ment14 APAC
MOSFET, DUAL N CH, 30V, 11A, POWERPAIR-8; MOSFET, DUAL N CH, 30V, 11A, POWERPAIR-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:16.7W
Dual N-Channel TrenchFET® Power MOSFETs
Vishay Siliconix Dual N-Channl TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SIZ300DT-T1-GE3
DISTI # V72:2272_09216119
Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R
RoHS: Compliant
1916
  • 1000:$0.4758
  • 500:$0.5568
  • 250:$0.6273
  • 100:$0.6290
  • 25:$0.7704
  • 10:$0.7734
  • 1:$0.8968
SIZ300DT-T1-GE3
DISTI # SIZ300DT-T1-GE3CT-ND
Vishay SiliconixMOSFET 2N-CH 30V 11A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
284In Stock
  • 1000:$0.5506
  • 500:$0.6975
  • 100:$0.8994
  • 10:$1.1380
  • 1:$1.2800
SIZ300DT-T1-GE3
DISTI # SIZ300DT-T1-GE3DKR-ND
Vishay SiliconixMOSFET 2N-CH 30V 11A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
284In Stock
  • 1000:$0.5506
  • 500:$0.6975
  • 100:$0.8994
  • 10:$1.1380
  • 1:$1.2800
SIZ300DT-T1-GE3
DISTI # SIZ300DT-T1-GE3TR-ND
Vishay SiliconixMOSFET 2N-CH 30V 11A POWERPAIR
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.4990
SIZ300DT-T1-GE3
DISTI # 27088796
Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R
RoHS: Compliant
1916
  • 1000:$0.4758
  • 500:$0.5568
  • 250:$0.6273
  • 100:$0.6290
  • 25:$0.7704
  • 16:$0.7734
SIZ300DT-T1-GE3
DISTI # SIZ300DT-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ300DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.4709
  • 6000:$0.4569
  • 12000:$0.4389
  • 18000:$0.4259
  • 30000:$0.4149
SIZ300DT-T1-GE3
DISTI # 91T5908
Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 11A, POWERPAIR-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
  • 1:$1.1400
  • 25:$0.9340
  • 50:$0.8260
  • 100:$0.7170
  • 250:$0.6670
  • 500:$0.6160
  • 1000:$0.5410
SIZ300DT-T1-GE3
DISTI # 91T5909
Vishay IntertechnologiesMOSFET, DUAL N CH, 30V, 11A, POWERPAIR-8, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.5580
  • 1000:$0.5350
  • 2000:$0.4860
  • 4000:$0.4380
  • 6000:$0.4220
  • 10000:$0.4120
SIZ300DT-T1-GE3
DISTI # 781-SIZ300DT-T1-GE3
Vishay IntertechnologiesMOSFET 30V 11A/28A 16.7/31W 24mohm/11mohm @ 10V
RoHS: Compliant
2946
  • 1:$1.1400
  • 10:$0.9340
  • 100:$0.7170
  • 500:$0.6160
  • 1000:$0.5410
  • 3000:$0.5400
SIZ300DT-T1-GE3Vishay Siliconix 1286
    SIZ300DT-T1-GE3Vishay IntertechnologiesMOSFET 30V 11A/28A 16.7/31W 24mohm/11mohm @ 10V
    RoHS: Compliant
    Americas -
      SIZ300DT-T1-GE3
      DISTI # C1S803603830999
      Vishay IntertechnologiesMOSFETs1916
      • 250:$0.6273
      • 100:$0.6290
      • 25:$0.7704
      • 10:$0.7734
      Bild Teil # Beschreibung
      SIZ300DT-T1-GE3

      Mfr.#: SIZ300DT-T1-GE3

      OMO.#: OMO-SIZ300DT-T1-GE3

      MOSFET RECOMMENDED ALT 78-SIZ342DT-T1-GE3
      SIZ300DT (Z300)

      Mfr.#: SIZ300DT (Z300)

      OMO.#: OMO-SIZ300DT-Z300--1190

      Neu und Original
      SIZ300DT-T1-GE3

      Mfr.#: SIZ300DT-T1-GE3

      OMO.#: OMO-SIZ300DT-T1-GE3-VISHAY

      MOSFET 2N-CH 30V 11A POWERPAIR
      SIZ300DT-TI-GE3

      Mfr.#: SIZ300DT-TI-GE3

      OMO.#: OMO-SIZ300DT-TI-GE3-1190

      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2500
      Menge eingeben:
      Der aktuelle Preis von SIZ300DT-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,58 $
      0,58 $
      10
      0,55 $
      5,52 $
      100
      0,52 $
      52,25 $
      500
      0,49 $
      246,70 $
      1000
      0,46 $
      464,40 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
      Beginnen mit
      Top