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SI4825DDY-T1-GE3

SI4825DDY-T1-GE3
Mfr. #:
SI4825DDY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -30V Vds 25V Vgs SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4825DDY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4825DDY-T1-GE3 DatasheetSI4825DDY-T1-GE3 Datasheet (P4-P6)SI4825DDY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SI4825DDY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
14.9 A
Rds On - Drain-Source-Widerstand:
12.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.4 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
57 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI4
Transistortyp:
1 P-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
28 S
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
40 ns
Typische Einschaltverzögerungszeit:
13 ns
Teil # Aliase:
SI4825DDY-GE3
Gewichtseinheit:
0.006596 oz
Tags
SI4825D, SI4825, SI482, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***y
    S***y
    IN

    Received the order within three weeks... tested too... it works quite well and is highly accurate in giving the coordinates... just one note... when I used the first time, it took about an hour to get a satellite lock anyway an impressive product and the description was very accurate, you get what you see... loved the seller, must buy.♥️

    2019-06-05
    R***v
    R***v
    FR

    As in the description, it came 15 days before spassk-far

    2019-06-21
***et Europe
Trans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14.9A; On Resistance Rds(On):0.01Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V Rohs Compliant: No
***ment14 APAC
MOSFET,P CH,DIODE,30V,14.9A,8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-14.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-10.9A; Power Dissipation Pd:2.7W; Voltage Vgs Max:-25V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4825DDY-T1-GE3
DISTI # V72:2272_09216587		Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
RoHS: Compliant		2238
  • 1000:$0.4110
  • 500:$0.5030
  • 250:$0.5695
  • 100:$0.5930
  • 25:$0.7467
  • 10:$0.8477
  • 1:$1.0227
SI4825DDY-T1-GE3
DISTI # V36:1790_09216587		Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
RoHS: Compliant		0
  • 2500000:$0.3681
  • 1250000:$0.3683
  • 250000:$0.3785
  • 25000:$0.3944
  • 2500:$0.3969
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 30V 14.9A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		12251In Stock
  • 1000:$0.4380
  • 500:$0.5548
  • 100:$0.6716
  • 10:$0.8610
  • 1:$0.9600
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 30V 14.9A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		12251In Stock
  • 1000:$0.4380
  • 500:$0.5548
  • 100:$0.6716
  • 10:$0.8610
  • 1:$0.9600
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 30V 14.9A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		10000In Stock
  • 25000:$0.3591
  • 12500:$0.3629
  • 5000:$0.3771
  • 2500:$0.3969
SI4825DDY-T1-GE3
DISTI # 31264063		Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
RoHS: Compliant		5000
  • 2500:$0.3139
SI4825DDY-T1-GE3
DISTI # 30172383		Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
RoHS: Compliant		2238
  • 19:$1.0227
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R (Alt: SI4825DDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 12500
  • 125000:$0.4913
  • 62500:$0.4997
  • 25000:$0.5083
  • 12500:$0.5264
  • 7500:$0.5459
  • 5000:$0.5669
  • 2500:$0.5896
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R (Alt: SI4825DDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.3289
  • 15000:€0.3539
  • 10000:€0.3829
  • 5000:€0.4449
  • 2500:€0.6529
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4825DDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.3462
  • 15000:$0.3557
  • 10000:$0.3659
  • 5000:$0.3814
  • 2500:$0.3930
SI4825DDY-T1-GE3
DISTI # 15R5086		Vishay IntertechnologiesMOSFET Transistor, P Channel, -14.9 A, -30 V, 0.01 ohm, -10 V, -1.4 V0
  • 10000:$0.3390
  • 6000:$0.3470
  • 4000:$0.3600
  • 2000:$0.4000
  • 1000:$0.4400
  • 1:$0.4590
SI4825DDY-T1-GE3
DISTI # 23T8516		Vishay IntertechnologiesMOSFET,P CHANNEL,DIODE,30V,14.9A,8-SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-14.9A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes4305
  • 500:$0.5570
  • 250:$0.5970
  • 100:$0.6360
  • 50:$0.6930
  • 25:$0.7510
  • 10:$0.8080
  • 1:$0.9720
SI4825DDY-T1-GE3.
DISTI # 28AC2146		Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:-14.9A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.4V,Power Dissipation Pd:2.7W,No. of Pins:8PinsRoHS Compliant: No0
  • 10000:$0.3390
  • 6000:$0.3470
  • 4000:$0.3600
  • 2000:$0.4000
  • 1000:$0.4400
  • 1:$0.4590
SI4825DDY-T1-GE3
DISTI # 70459545		Vishay Siliconix30V 14.9A 5.0W 12.5mohm @ 10V
RoHS: Compliant		0
  • 2500:$0.5720
  • 5000:$0.5450
SI4825DDY-T1-GE3
DISTI # 781-SI4825DDY-GE3		Vishay IntertechnologiesMOSFET -30V Vds 25V Vgs SO-8
RoHS: Compliant		6464
  • 1:$0.9400
  • 10:$0.7770
  • 100:$0.5960
  • 500:$0.5130
  • 1000:$0.4040
  • 2500:$0.3770
  • 5000:$0.3590
  • 10000:$0.3450
SI4825DDY-T1-GE3Vishay Semiconductors14900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA1520
  • 365:$0.4400
  • 92:$0.5500
  • 1:$1.1000
SI4825DDY-T1-GE3
DISTI # 1807295		Vishay IntertechnologiesP-CH MOSFET SO-8 30V 13MOHM @ 10V- LEAD(, RL2470
  • 10000:£0.3200
  • 5000:£0.3300
  • 2500:£0.3410
SI4825DDY-T1-GE3
DISTI # TMOSP10626		Vishay IntertechnologiesP-CH 30V 14,9A 12,5mOhm SO-8
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 2500:$0.4940
  • 5000:$0.4658
  • 7500:$0.4375
  • 10000:$0.3811
SI4825DDY-T1-GE3
DISTI # 1858962		Vishay IntertechnologiesMOSFET,P CH,DIODE,30V,14.9A,8-SOIC4680
  • 500:£0.3600
  • 250:£0.3890
  • 100:£0.4180
  • 25:£0.5450
  • 5:£0.6770
SI4825DDY-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 25V Vgs SO-8
RoHS: Compliant		Americas - 2500
    SI4825DDY-T1-GE3
    DISTI # 1858962RL    		Vishay IntertechnologiesMOSFET,P CH,DIODE,30V,14.9A,8-SOIC
    RoHS: Compliant    		0
    • 2500:$0.7600
    • 500:$0.7750
    • 100:$0.9000
    • 10:$1.1700
    • 1:$1.4200
    SI4825DDY-T1-GE3
    DISTI # 1858962    		Vishay IntertechnologiesMOSFET,P CH,DIODE,30V,14.9A,8-SOIC
    RoHS: Compliant    		4300
    • 2500:$0.7600
    • 500:$0.7750
    • 100:$0.9000
    • 10:$1.1700
    • 1:$1.4200
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1989
    Menge eingeben:
    Der aktuelle Preis von SI4825DDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,94 $
    0,94 $
    10
    0,78 $
    7,77 $
    100
    0,60 $
    59,60 $
    500
    0,51 $
    256,50 $
    1000
    0,40 $
    404,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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