FGP10N60UNDF

FGP10N60UNDF
Mfr. #:
FGP10N60UNDF
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 600V 10A NPT IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGP10N60UNDF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FGP10N60UNDF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Gewichtseinheit
0.063493 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-220-3
Aufbau
Single
Leistung max
139W
Reverse-Recovery-Time-trr
37.7ns
Strom-Kollektor-Ic-Max
20A
Spannungs-Kollektor-Emitter-Breakdown-Max
600V
IGBT-Typ
NPT
Strom-Kollektor-gepulster-Icm
30A
Vce-on-Max-Vge-Ic
2.45V @ 15V, 10A
Schaltenergie
150μJ (on), 50μJ (off)
Gate-Gebühr
37nC
Td-ein-aus-25°C
8ns/52.2ns
Testbedingung
400V, 10A, 10 Ohm, 15V
Pd-Verlustleistung
139 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
600 V
Kollektor-Emitter-Sättigungsspannung
2.3 V
Kontinuierlicher Kollektorstrom-bei-25-C
10 A
Gate-Emitter-Leckstrom
+/- 10 uA
Maximale Gate-Emitter-Spannung
+/- 20 V
Tags
FGP10N, FGP10, FGP1, FGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Field Stop & Short Circuit Rated IGBTs
ON Semiconductor's Field Stop & short Circuit Rated IGBTs offer a variety of 600 and 650V Insulated Gate Bipolar Transistors (IGBTs) that have a collector current rating between 5A to 60A. This offers optimum performance for welding and PFC or low power inverter driven applications where low conduction, low switching losses and short circuit ruggedness features are essential. Typical applications for these include solar inverters, UPS, SMPS, welder, PFC, home appliance inverter driven (fan motor driver, circulation pump, refrigerator, dish washer), and industrial inverter (sewing machine, CNC).
Teil # Mfg. Beschreibung Aktie Preis
FGP10N60UNDF
DISTI # V36:1790_06359745
ON SemiconductorNPTPIGBT TO220 10A 600V129892
  • 1000:$0.9258
  • 500:$1.1233
  • 100:$1.2682
  • 10:$1.6082
  • 1:$2.0813
FGP10N60UNDF
DISTI # FGP10N60UNDF-ND
ON SemiconductorIGBT 600V 20A 139W TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
756In Stock
  • 5600:$0.9100
  • 3200:$0.9214
  • 800:$1.1944
  • 100:$1.4537
  • 25:$1.7064
  • 10:$1.8090
  • 1:$2.0100
FGP10N60UNDF
DISTI # 32373636
ON SemiconductorNPTPIGBT TO220 10A 600V129892
  • 1000:$0.9258
  • 500:$1.1233
  • 100:$1.2682
  • 10:$1.6082
  • 8:$1.8921
FGP10N60UNDF
DISTI # 31022398
ON SemiconductorNPTPIGBT TO220 10A 600V800
  • 1000:$0.9336
  • 800:$1.1187
FGP10N60UNDF
DISTI # FGP10N60UNDF
ON SemiconductorTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube (Alt: FGP10N60UNDF)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€0.8069
  • 500:€0.8369
  • 100:€0.8689
  • 50:€0.9039
  • 25:€0.9419
  • 10:€1.0269
  • 1:€1.1299
FGP10N60UNDF
DISTI # FGP10N60UNDF
ON SemiconductorTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: FGP10N60UNDF)
RoHS: Compliant
Min Qty: 800
Container: Tube
Americas - 0
  • 8000:$0.8019
  • 4800:$0.8219
  • 3200:$0.8329
  • 1600:$0.8439
  • 800:$0.8489
FGP10N60UNDF
DISTI # 46W4343
ON SemiconductorNPTPIGBT TO220 10A 600V / TUBE0
  • 10000:$0.8850
  • 2500:$0.9240
  • 1000:$1.0000
  • 500:$1.2000
  • 100:$1.3600
  • 10:$1.6800
  • 1:$2.0700
FGP10N60UNDF
DISTI # 512-FGP10N60UNDF
ON SemiconductorIGBT Transistors 600V 10A NPT IGBT
RoHS: Compliant
1192
  • 1:$1.9100
  • 10:$1.6200
  • 100:$1.3000
  • 500:$1.1300
  • 1000:$0.9430
Bild Teil # Beschreibung
FGP10N60UNDF

Mfr.#: FGP10N60UNDF

OMO.#: OMO-FGP10N60UNDF

IGBT Transistors 600V 10A NPT IGBT
FGP10N60UNDF

Mfr.#: FGP10N60UNDF

OMO.#: OMO-FGP10N60UNDF-ON-SEMICONDUCTOR

IGBT Transistors 600V 10A NPT IGBT
FGP10N60

Mfr.#: FGP10N60

OMO.#: OMO-FGP10N60-1190

Neu und Original
FGP10N60RUFD

Mfr.#: FGP10N60RUFD

OMO.#: OMO-FGP10N60RUFD-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1500
Menge eingeben:
Der aktuelle Preis von FGP10N60UNDF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,20 $
1,20 $
10
1,14 $
11,43 $
100
1,08 $
108,26 $
500
1,02 $
511,20 $
1000
0,96 $
962,30 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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