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| PartNumber | APT50GP60B2DQ2G | APT50GP60BG | APT50GP60J |
| Description | IGBT Transistors FG, IGBT-COMBI, 600V, TO-247 T-MAX, RoHS | IGBT Transistors FG, IGBT, 600V, 50A, TO-247, RoHS | IGBT Modules FG, IGBT, 600V, 50A, SOT-227 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Modules |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Product | - | - | IGBT Silicon Modules |
| Configuration | - | - | Single |
| Collector Emitter Voltage VCEO Max | - | - | 600 V |
| Collector Emitter Saturation Voltage | - | - | 2.2 V |
| Continuous Collector Current at 25 C | - | - | 100 A |
| Gate Emitter Leakage Current | - | - | 100 nA |
| Pd Power Dissipation | - | - | 329 W |
| Package / Case | - | - | ISOTOP-4 |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Mounting Style | - | - | SMD/SMT |
| Maximum Gate Emitter Voltage | - | - | 20 V |