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IXXH60N65C4

IXXH60N65C4
Mfr. #:
IXXH60N65C4
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors 650V/118A TRENCH IGBT GENX4 XPT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXXH60N65C4 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXXH60N65C4 DatasheetIXXH60N65C4 Datasheet (P4-P6)
ECAD Model:
Mehr Informationen:
IXXH60N65C4 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247AD-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.8 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
118 A
Pd - Verlustleistung:
455 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
IXXH60N65
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
60 A
Marke:
IXYS
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Handelsname:
XPT
Gewichtseinheit:
0.158733 oz
Tags
IXXH60N65, IXXH6, IXXH, IXX
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 118A 455000mW 3-Pin(3+Tab) TO-247AD
***el Electronic
IGBT Transistors 650V/118A TRENCH IGBT GENX4 XPT
***i-Key
IGBT 650V 118A 455W TO247AD
***S
new, original packaged
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IXXH60N65C4
DISTI # 20749765		IXYS CorporationTrans IGBT Chip N-CH 650V 118A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		19
  • 2500:$3.2861
  • 1000:$3.4070
  • 500:$3.6490
  • 250:$4.6368
  • 100:$5.1408
  • 50:$5.2214
  • 25:$5.4734
  • 19:$6.2698
IXXH60N65C4
DISTI # IXXH60N65C4-ND		IXYS CorporationIGBT 650V 118A 455W TO247AD
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$5.4337
IXXH60N65C4
DISTI # 747-IXXH60N65C4		IXYS CorporationIGBT Transistors 650V/118A TRENCH IGBT GENX4 XPT
RoHS: Compliant		9
  • 1:$6.9600
  • 10:$6.2200
  • 25:$5.4300
  • 50:$5.1800
  • 100:$5.1000
  • 250:$4.6000
  • 500:$3.6200
  • 1000:$3.3800
Bild Teil # Beschreibung
IXXH60N65B4

Mfr.#: IXXH60N65B4

OMO.#: OMO-IXXH60N65B4

 IGBT Transistors 650V/116A TRENCH IGBT GENX4 XPT
IXXH60N65C4

Mfr.#: IXXH60N65C4

OMO.#: OMO-IXXH60N65C4

 IGBT Transistors 650V/118A TRENCH IGBT GENX4 XPT
IXXH60N60B4

Mfr.#: IXXH60N60B4

OMO.#: OMO-IXXH60N60B4

 IGBT Transistors GenX3 600V XPT IGBTs
IXXH60N60B4H1

Mfr.#: IXXH60N60B4H1

OMO.#: OMO-IXXH60N60B4H1

 IGBT Transistors 40 Amps 900V 2.5 Rds
IXXH60N65B4HI

Mfr.#: IXXH60N65B4HI

OMO.#: OMO-IXXH60N65B4HI-1190

 Neu und Original
IXXH60N60B4H1

Mfr.#: IXXH60N60B4H1

OMO.#: OMO-IXXH60N60B4H1-126

 IGBT Transistors 40 Amps 900V 2.5 Rds
IXXH60N60B4

Mfr.#: IXXH60N60B4

OMO.#: OMO-IXXH60N60B4-126

 IGBT Transistors GenX3 600V XPT IGBTs
IXXH60N65C4

Mfr.#: IXXH60N65C4

OMO.#: OMO-IXXH60N65C4-IXYS-CORPORATION

 IGBT Transistors 650V/118A TRENCH IGBT GENX4 XPT
IXXH60N65B4

Mfr.#: IXXH60N65B4

OMO.#: OMO-IXXH60N65B4-IXYS-CORPORATION

 IGBT Transistors 650V/116A TRENCH IGBT GENX4 XPT
IXXH60N65B4H1

Mfr.#: IXXH60N65B4H1

OMO.#: OMO-IXXH60N65B4H1-IXYS-CORPORATION

 IGBT Transistors 650V/106A TRENCH IGBT GENX4 XPT
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von IXXH60N65C4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,96 $
6,96 $
10
6,22 $
62,20 $
25
5,43 $
135,75 $
50
5,18 $
259,00 $
100
5,10 $
510,00 $
250
4,60 $
1 150,00 $
500
3,62 $
1 810,00 $
1000
3,38 $
3 380,00 $
2500
3,26 $
8 150,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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