CSD17310Q5A

Mfr. #:: CSD17310Q5A
Beschreibung:: MOSFET 30V N Channel NexFET Power MOSFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: CSD17310Q5A Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: CSD17310Q5A Mehr Informationen CSD17310Q5A Product Details

Produkteigenschaft
Attributwert

Hersteller:: Texas Instruments

Produktkategorie:: MOSFET

RoHS:: E

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: VSONP-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 100 A

Rds On - Drain-Source-Widerstand:: 5.1 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 900 mV

Vgs - Gate-Source-Spannung:: 8 V

Qg - Gate-Ladung:: 8.9 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 3.1 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: NexFET

Verpackung:: Spule

Höhe:: 1 mm

Länge:: 6 mm

Serie:: CSD17310Q5A

Transistortyp:: 1 N-Channel

Breite:: 4.9 mm

Marke:: Texas Instruments

Vorwärtstranskonduktanz - Min:: 85 S

Entwicklungs-Kit:: TPS40007EVM-001, TPS51220EVM

Abfallzeit:: 5 ns

Produktart:: MOSFET

Anstiegszeit:: 11.6 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 15 ns

Typische Einschaltverzögerungszeit:: 6.5 ns

Tags: CSD17310Q, CSD17310, CSD1731, CSD173, CSD17, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD17310Q5A Bewertungen und Rezensionen

E**r

The order was not delivered, however there were no problems to get refund from the seller.

2019-01-14

E**o

not suitable for raspberry pi, because it draws more than 1-2 A current continuous

2019-03-27

G***p

The goods received on time. thanks!

2019-05-25

A***y

All is well, i recommend.

2019-05-27

CSD17310Q5A Beschreibung

***as Instruments: 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.9 mOhm 8-VSONP -55 to 150

***ark: Mosfet, N Ch, 30V, 100A, 8Son; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0039Ohm; Rds(On) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.3V; Power Dissipationrohs Compliant: Yes

***th Star Micro: the nexfet power mosfet has been designed to minimize losses in power conversion applications and optimized for 5v gate drive applications.

***emi: Single N-Channel Power MOSFET 30V, 102A, 3.6mΩ 1500 / Tape & Reel. Pb-Free, Wettable Flanks

***ark: Power MOSFET 30V 102A 3.6 mOhm Single N-Channel u8FL / REEL RoHS Compliant: Yes

***Yang: Trans MOSFET N-CH 30V 102A 8-Pin WDFN T/R - Tape and Reel

*** Electronics: MOSFET NFET U8FL 30V 102 A 3.6MOH

***r Electronics: Power Field-Effect Transistor, 22A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ure Electronics: MOSFET, Single N-Channel, 30 V, 102 A

***ment14 APAC: MOSFET'S - SINGLE MOSFET'S TRANSISTORS;

***i-Key: MOSFET N-CH 30V 22A/102A 8WDFN

***enic: 30V 102A 2.9m´Î@10V30A 3.2W 2.2V@250uA 71pF@15V N Channel 1.988nF@15V [email protected] -55¡Í~+175¡Í@(Tj) WDFN-8 MOSFETs ROHS

***ure Electronics: Single N-Channel 30 V 4.2 mOhm 31 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 93A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:57W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:93A; Power Dissipation Pd:57W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: Single N-Channel 30 V 7.5 mOhm 17 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 80A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:50W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS

***Yang: Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R - Tape and Reel

***nell: MOSFET, N-CH, 30V, 82A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 82A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0041ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 54W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET

***peria: PSMN3R7-30YLC - N-channel 30 V 3.95 mΩ logic level MOSFET in LFPAK using NextPower technology

***ical: Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R

***el Electronic: IC 7CH 1/2 BRIDGE MOSFET MOTOR

***emi: Power MOSFET 30V 90A 4 mOhm Single N-Channel SO-8FL

***ser: MOSFETs- Power and Small Signal NFET 30V 90A 4MOHM

***et: Trans MOSFET N-CH 30V 18A 8-Pin SO-FL T/R

***th Star Micro: Power MOSFET 30 V 90 A Single N-Channel SO-8 FL

***r Electronics: Power Field-Effect Transistor, 11A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):2.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***AS INSTUMENTS: The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.

CSD17310Q5A Mehr Informationen

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

Teil #	Beschreibung	Aktie	Preis
CSD17310Q5A DISTI # V98:2334_07248763	Trans MOSFET N-CH 30V 21A 8-Pin VSONP EP T/R RoHS: Compliant	2049	1000:$0.4020 500:$0.5064 250:$0.5688 100:$0.5693 25:$0.7257 10:$0.7267 1:$0.8384
CSD17310Q5A DISTI # 296-25858-1-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	22797In Stock	1000:$0.4674 500:$0.5920 100:$0.7634 10:$0.9660 1:$1.0900
CSD17310Q5A DISTI # 296-25858-6-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	22797In Stock	1000:$0.4674 500:$0.5920 100:$0.7634 10:$0.9660 1:$1.0900
CSD17310Q5A DISTI # 296-25858-2-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	17500In Stock	12500:$0.3872 5000:$0.4023 2500:$0.4235
CSD17310Q5A DISTI # 30695289	Trans MOSFET N-CH 30V 21A 8-Pin VSONP EP T/R RoHS: Compliant	2049	1000:$0.4020 500:$0.5064 250:$0.5688 100:$0.5693 25:$0.7257 19:$0.7267
CSD17310Q5A DISTI # 30601821	Trans MOSFET N-CH 30V 21A 8-Pin VSONP EP T/R RoHS: Compliant	452	250:$0.6962 100:$0.7178 50:$0.8224 11:$1.2227
CSD17310Q5A DISTI # CSD17310Q5A	Trans MOSFET N-CH 30V 21A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD17310Q5A) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3989 5000:$0.3789 10000:$0.3669 15000:$0.3539 25000:$0.3449
CSD17310Q5A DISTI # CSD17310Q5A	Trans MOSFET N-CH 30V 21A 8-Pin SON EP T/R (Alt: CSD17310Q5A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
CSD17310Q5A DISTI # CSD17310Q5A	Trans MOSFET N-CH 30V 21A 8-Pin SON EP T/R (Alt: CSD17310Q5A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.5549 5000:€0.4539 10000:€0.4159 15000:€0.3559 25000:€0.3329
CSD17310Q5A	30V N Channel NexFET&#153,Power MOSFET	6840	1000:$0.3100 750:$0.3500 500:$0.4400 250:$0.5400 100:$0.5800 25:$0.6800 10:$0.7300 1:$0.8200
CSD17310Q5A DISTI # 595-CSD17310Q5A	MOSFET 30V N Channel NexFET Power MOSFET RoHS: Compliant	24994	1:$0.9000 10:$0.7700 100:$0.5920 500:$0.5230 1000:$0.4130 2500:$0.3660 10000:$0.3520 22500:$0.3410
CSD17310Q5A	Power Field-Effect Transistor, 100A I(D), 30V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	487652	1000:$0.4100 500:$0.4300 100:$0.4500 25:$0.4700 1:$0.5100
CSD17310Q5A DISTI # C1S746202570964	Trans MOSFET N-CH 30V 21A 8-Pin VSONP EP T/R RoHS: Compliant	452	250:$0.5460 100:$0.5630 50:$0.6450 10:$0.9590 1:$1.9700
CSD17310Q5A DISTI # C1S746201489425	Trans MOSFET N-CH 30V 21A 8-Pin VSONP EP T/R RoHS: Compliant	2049	250:$0.5688 100:$0.5693 25:$0.7257 10:$0.7267
CSD17310Q5A DISTI # 1823848	MOSFET, N CH, 30V, 100A, 8SON RoHS: Compliant	456	5:£0.6370 25:£0.5730 100:£0.4370 250:£0.4120 500:£0.3860
CSD17310Q5A DISTI # 1823848	MOSFET, N CH, 30V, 100A, 8SON RoHS: Compliant	456	1:$1.4300 10:$1.2200 100:$0.9370 500:$0.8280 1000:$0.6540 2500:$0.5800 10000:$0.5570 22500:$0.5400

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1987
Menge eingeben:

Der aktuelle Preis von CSD17310Q5A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,90 $~~; ~~0,90 $~~

10: ~~0,77 $~~; ~~7,70 $~~

100: ~~0,59 $~~; ~~59,20 $~~

500: ~~0,52 $~~; ~~261,50 $~~

1000: ~~0,41 $~~; ~~413,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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