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FDC855N

FDC855N
Mfr. #:
FDC855N
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 30V Single NCh Logic Level PowerTrench
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDC855N Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SSOT-6
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
6.1 A
Rds On - Drain-Source-Widerstand:
27 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.6 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
2.9 mm
Produkt:
MOSFET Kleinsignal
Serie:
FDC855N
Transistortyp:
1 N-Channel
Breite:
1.6 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
2 ns
Produktart:
MOSFET
Anstiegszeit:
2 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
14 ns
Typische Einschaltverzögerungszeit:
6 ns
Gewichtseinheit:
0.001058 oz
Tags
FDC855N, FDC85, FDC8, FDC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel, PowerTrench® MOSFET, Logic Level, 30V, 6.1A, 27mΩ
***ure Electronics
N-Channel 30 V 27 mOhm Surface Mount Logic Level PowerTrench® MOSFET-SSOT-6
***rchild Semiconductor
This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Semiconductor’s advanced PowerTrench® process, this device possesses minimized on-state resistance to optimize the power consumption. They are ideal for applications where in-line power loss is critical.
Teil # Mfg. Beschreibung Aktie Preis
FDC855N
DISTI # V72:2272_06298591		ON SemiconductorTrans MOSFET N-CH 30V 6.1A 6-Pin SuperSOT T/R3000
  • 3000:$0.2005
  • 1000:$0.2269
  • 500:$0.2454
  • 250:$0.2727
  • 100:$0.3030
  • 25:$0.4833
  • 10:$0.5413
  • 1:$0.6484
FDC855N
DISTI # V36:1790_06298591		ON SemiconductorTrans MOSFET N-CH 30V 6.1A 6-Pin SuperSOT T/R0
  • 3000000:$0.2100
  • 1500000:$0.2101
  • 300000:$0.2158
  • 30000:$0.2237
  • 3000:$0.2249
FDC855N
DISTI # FDC855NCT-ND		ON SemiconductorMOSFET N-CH 30V 6.1A 6-SSOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2940In Stock
  • 1000:$0.2541
  • 500:$0.3288
  • 100:$0.4185
  • 10:$0.5610
  • 1:$0.6500
FDC855N
DISTI # FDC855NDKR-ND		ON SemiconductorMOSFET N-CH 30V 6.1A 6-SSOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2940In Stock
  • 1000:$0.2541
  • 500:$0.3288
  • 100:$0.4185
  • 10:$0.5610
  • 1:$0.6500
FDC855N
DISTI # FDC855NTR-ND		ON SemiconductorMOSFET N-CH 30V 6.1A 6-SSOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 30000:$0.1857
  • 15000:$0.1959
  • 6000:$0.2104
  • 3000:$0.2249
FDC855N
DISTI # 33716836		ON SemiconductorTrans MOSFET N-CH 30V 6.1A 6-Pin SuperSOT T/R78000
  • 3000:$0.2249
FDC855N
DISTI # 33709824		ON SemiconductorTrans MOSFET N-CH 30V 6.1A 6-Pin SuperSOT T/R3000
  • 42:$0.6484
FDC855N
DISTI # FDC855N		ON SemiconductorTrans MOSFET N-CH 30V 6.1A 6-Pin SuperSOT T/R (Alt: FDC855N)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1489
  • 18000:€0.1599
  • 12000:€0.1739
  • 6000:€0.1899
  • 3000:€0.2319
FDC855N
DISTI # FDC855N		ON SemiconductorTrans MOSFET N-CH 30V 6.1A 6-Pin SuperSOT T/R - Bulk (Alt: FDC855N)
RoHS: Compliant
Min Qty: 1250
Container: Bulk		Americas - 0
  • 12500:$0.2459
  • 6250:$0.2529
  • 3750:$0.2559
  • 2500:$0.2589
  • 1250:$0.2609
FDC855N
DISTI # FDC855N		ON SemiconductorTrans MOSFET N-CH 30V 6.1A 6-Pin SuperSOT T/R - Tape and Reel (Alt: FDC855N)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1909
  • 18000:$0.1959
  • 12000:$0.1979
  • 6000:$0.2009
  • 3000:$0.2019
FDC855N
DISTI # 84W8850		ON SemiconductorTrans MOSFET N-CH 30V 6.1A 6-Pin SuperSOT T/R - Product that comes on tape, but is not reeled (Alt: 84W8850)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1000:$0.2650
  • 500:$0.2900
  • 250:$0.3160
  • 100:$0.3420
  • 50:$0.4480
  • 25:$0.5550
  • 1:$0.6770
FDC855N
DISTI # 84W8850		ON SemiconductorMOSFET, N CHANNEL, 30V, 0.0207OHM, 6.1A, SUPERSOT-6,Transistor Polarity:N Channel,Continuous Drain Current Id:6.1A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0207ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:6Pins RoHS Compliant: Yes3
  • 1000:$0.2650
  • 500:$0.2900
  • 250:$0.3160
  • 100:$0.3420
  • 50:$0.4480
  • 25:$0.5550
  • 1:$0.6770
FDC855N
DISTI # 88M9925		ON SemiconductorMOSFET Transistor, N Channel, 6.1 A, 30 V, 0.0207 ohm, 10 V, 2 V RoHS Compliant: Yes0
  • 30000:$0.1830
  • 18000:$0.1880
  • 12000:$0.1930
  • 6000:$0.1980
  • 3000:$0.2020
  • 1:$0.2070
FDC855N
DISTI # 512-FDC855N		ON SemiconductorMOSFET 30V Single NCh Logic Level PowerTrench
RoHS: Compliant		6000
  • 1:$0.6000
  • 10:$0.4990
  • 100:$0.3050
  • 1000:$0.2350
  • 3000:$0.2010
  • 9000:$0.1870
  • 24000:$0.1770
  • 45000:$0.1730
FDC855NFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 6.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
RoHS: Compliant		50242
  • 1000:$0.2600
  • 500:$0.2800
  • 100:$0.2900
  • 25:$0.3000
  • 1:$0.3200
FDC855NFairchild Semiconductor CorporationSMALL SIGNAL FIELD-EFFECT TRANSISTOR, 6.1A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MO-193AA25
  • 9:$0.4500
  • 1:$0.6000
FDC855NFairchild Semiconductor Corporation30V,6.1A,N-Channel MOSFET1850
  • 1:$0.2000
  • 100:$0.2000
  • 500:$0.2000
  • 1000:$0.2000
FDC855N
DISTI # 2459564		ON SemiconductorMOSFET, N CHANNEL, 30V, 0.0207OHM, 6.1A, SUPERSOT-6
RoHS: Compliant		3003
  • 45000:$0.2670
  • 24000:$0.2730
  • 9000:$0.2880
  • 3000:$0.3100
  • 1000:$0.3620
  • 100:$0.4700
  • 10:$0.7680
  • 1:$0.9230
FDC855N
DISTI # 2459564		ON SemiconductorMOSFET, N CHANNEL, 30V, 0.0207OHM, 6.1A,3003
  • 250:£0.2860
  • 100:£0.3090
  • 50:£0.4060
  • 25:£0.5030
  • 1:£0.6130
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 128KB Flash, 8KB RAM, 1KB EEPROM, 12-bit ADC2, Vector Interrupts, DMA, MAP, DIA, DAC, Comp, PWM, CWG
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von FDC855N dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,60 $
0,60 $
10
0,50 $
4,99 $
100
0,30 $
30,50 $
1000
0,24 $
235,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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