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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| PHKD3NQ10T,518 DISTI # PHKD3NQ10T,518-ND | Nexperia | MOSFET 2N-CH 100V 3A 8SOIC RoHS: Compliant Min Qty: 10000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| PHKD3NQ10T518 DISTI # PHKD3NQ10T518 | Avnet, Inc. | - Bulk (Alt: PHKD3NQ10T518) Min Qty: 596 Container: Bulk | Americas - 0 |
|
| PHKD3NQ10T,518 DISTI # PHKD3NQ10T,518 | Nexperia | Trans MOSFET N-CH 100V 3A 8-Pin SO T/R (Alt: PHKD3NQ10T,518) RoHS: Compliant Min Qty: 1 Container: Tape and Reel | Europe - 0 |
|
| PHKD3NQ10T,518 DISTI # 32AC8181 | Nexperia | MOSFET, DUAL N-CH, 100V, 3A, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.07ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes | 0 | |
| PHKD3NQ10T,518 DISTI # 771-PHKD3NQ10T518 | Nexperia | MOSFET PHKD3NQ10T/SO8/REEL 13" Q1/T1 RoHS: Compliant | 0 | |
| PHKD3NQ10T518 | NXP Semiconductors | Now Nexperia PHKD3NQ10T - Power Field-Effect Transistor, 3A I(D), 100V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO8 RoHS: Not Compliant | 11090 |
|
| PHKD3NQ10T518 | Nexperia | Now Nexperia PHKD3NQ10T - Power Field-Effect Transistor, 3A I(D), 100V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO8 RoHS: Not Compliant | 5000 |
|
| PHKD3NQ10T | Philips Semiconductors | 2522 | ||
| PHKD3NQ10T | NXP Semiconductors | 3 A, 100 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | 50 |
|
| PHKD3NQ10T,518 DISTI # 2777608 | Nexperia | MOSFET, DUAL N-CH, 100V, 3A, SOIC RoHS: Compliant | 695 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: PHKD3NQ10T,518 OMO.#: OMO-PHKD3NQ10T-518-NEXPERIA |
MOSFET PHKD3NQ10T/SO8/REEL13DP |
|
Mfr.#: PHKD3NQ10T OMO.#: OMO-PHKD3NQ10T-1190 |
3 A, 100 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
|
|
Mfr.#: PHKD3NQ10T518 OMO.#: OMO-PHKD3NQ10T518-1190 |
- Bulk (Alt: PHKD3NQ10T518) |