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SISS26DN-T1-GE3

SISS26DN-T1-GE3
Mfr. #:
SISS26DN-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CHANNEL 60V 60A 1212-8S
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISS26DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SISS26DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SISS2, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 60A 8-Pin PowerPAK 1212-S T/R
***mal
N-Channel 60 V (D-S) MOSFET
***ark
Mosfet, N-Ch, 60V, 60A, 150Deg C, 57W; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; On Resistance Rds(On):0.0037Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SISS26DN-T1-GE3
DISTI # V72:2272_22521042		Vishay IntertechnologiesN-Channel 60 V (D-S) Mosfet0
    SISS26DN-T1-GE3
    DISTI # V36:1790_22521042    		Vishay IntertechnologiesN-Channel 60 V (D-S) Mosfet0
    • 6000000:$0.6627
    • 3000000:$0.6628
    • 600000:$0.6694
    • 60000:$0.6789
    • 6000:$0.6804
    SISS26DN-T1-GE3
    DISTI # SISS26DN-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CHANNEL 60V 60A 1212-8S
    Min Qty: 1
    Container: Cut Tape (CT)    		13092In Stock
    • 1000:$0.7258
    • 500:$0.8760
    • 100:$1.0662
    • 10:$1.3270
    • 1:$1.4800
    SISS26DN-T1-GE3
    DISTI # SISS26DN-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CHANNEL 60V 60A 1212-8S
    Min Qty: 1
    Container: Digi-Reel®    		13092In Stock
    • 1000:$0.7258
    • 500:$0.8760
    • 100:$1.0662
    • 10:$1.3270
    • 1:$1.4800
    SISS26DN-T1-GE3
    DISTI # SISS26DN-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CHANNEL 60V 60A 1212-8S
    Min Qty: 3000
    Container: Tape & Reel (TR)    		12000In Stock
    • 6000:$0.6464
    • 3000:$0.6804
    SISS26DN-T1-GE3
    DISTI # SISS26DN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 60V 23.3A 8-Pin PowerPAK 1212 - Tape and Reel (Alt: SISS26DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.6229
    • 18000:$0.6399
    • 12000:$0.6579
    • 6000:$0.6859
    • 3000:$0.7069
    SISS26DN-T1-GE3
    DISTI # SISS26DN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 60V 23.3A 8-Pin PowerPAK 1212 (Alt: SISS26DN-T1-GE3)
    Min Qty: 1    		Europe - 0
      SISS26DN-T1-GE3
      DISTI # 59AC7455      		Vishay IntertechnologiesN-CHANNEL 60-V (D-S) MOSFET
      RoHS: Not Compliant      		0
      • 10000:$0.6180
      • 6000:$0.6320
      • 4000:$0.6570
      • 2000:$0.7290
      • 1000:$0.8020
      • 1:$0.8360
      SISS26DN-T1-GE3
      DISTI # 37AC0920      		Vishay IntertechnologiesMOSFET, N-CH, 60V, 60A, POWERPAK 1212,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.6V,Power RoHS Compliant: Yes
      RoHS: Compliant      		1920
      • 500:$0.9230
      • 250:$0.9970
      • 100:$1.0700
      • 50:$1.1800
      • 25:$1.2800
      • 10:$1.3900
      • 1:$1.6900
      SISS26DN-T1-GE3
      DISTI # 78-SISS26DN-T1-GE3      		Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs PowerPAK 1212-8S
      RoHS: Compliant      		14562
      • 1:$1.5500
      • 10:$1.3900
      • 100:$1.0900
      • 500:$0.9230
      • 1000:$0.7430
      • 3000:$0.6800
      • 6000:$0.6460
      • 9000:$0.6220
      SISS26DN-T1-GE3
      DISTI # 2785453RL      		Vishay IntertechnologiesMOSFET, N-CH, 60V, 60A, POWERPAK 1212
      RoHS: Compliant      		0
      • 1000:£0.7500
      • 500:£0.7530
      • 250:£0.8130
      • 100:£0.8730
      • 10:£1.1900
      • 1:£1.5400
      SISS26DN-T1-GE3
      DISTI # 2785453      		Vishay IntertechnologiesMOSFET, N-CH, 60V, 60A, POWERPAK 1212
      RoHS: Compliant      		3176
      • 1000:£0.7500
      • 500:£0.7530
      • 250:£0.8130
      • 100:£0.8730
      • 10:£1.1900
      • 1:£1.5400
      SISS26DN-T1-GE3
      DISTI # 2785453      		Vishay IntertechnologiesMOSFET, N-CH, 60V, 60A, POWERPAK 1212
      RoHS: Compliant      		1930
      • 500:$1.3800
      • 100:$1.6800
      • 10:$2.0900
      • 1:$2.3200
      SISS26DN-T1-GE3Vishay IntertechnologiesMOSFET N-CHANNEL 60V 60A 1212-8S6015
      • 1:¥34.1981
      • 100:¥17.5094
      • 1500:¥10.7158
      • 3000:¥8.1011
      Bild Teil # Beschreibung
      SISS26DN-T1-GE3

      Mfr.#: SISS26DN-T1-GE3

      OMO.#: OMO-SISS26DN-T1-GE3

      		 MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S
      SISS26DN-T1-GE3

      Mfr.#: SISS26DN-T1-GE3

      OMO.#: OMO-SISS26DN-T1-GE3-VISHAY

      		 MOSFET N-CHANNEL 60V 60A 1212-8S
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von SISS26DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,17 $
      1,17 $
      10
      1,12 $
      11,15 $
      100
      1,06 $
      105,63 $
      500
      1,00 $
      498,80 $
      1000
      0,94 $
      939,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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