IPB80P04P4-05

IPB80P04P4-05
Mfr. #:
IPB80P04P4-05
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB80P04P4-05 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB80P04P4-05 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
80 A
Rds On - Drain-Source-Widerstand:
3.7 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
151 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS-P2
Transistortyp:
1 P-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Abfallzeit:
65 ns
Produktart:
MOSFET
Anstiegszeit:
24 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
73 ns
Typische Einschaltverzögerungszeit:
42 ns
Teil # Aliase:
IPB80P04P405ATMA1 IPB8P4P45XT SP000652618
Gewichtseinheit:
0.139332 oz
Tags
IPB80P04, IPB80P, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPB80P04P405ATMA1
DISTI # V72:2272_06384014
Infineon Technologies AGTrans MOSFET P-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
2085
  • 1000:$0.9403
  • 500:$1.0328
  • 250:$1.1432
  • 100:$1.1884
  • 25:$1.4619
  • 10:$1.4781
  • 1:$1.7262
IPB80P04P405ATMA1
DISTI # V36:1790_06384014
Infineon Technologies AGTrans MOSFET P-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
2000
  • 10000:$0.8543
  • 5000:$0.8867
  • 2000:$0.9196
  • 1000:$0.9770
IPB80P04P405ATMA1
DISTI # IPB80P04P405ATMA1-ND
Infineon Technologies AGMOSFET P-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$1.0250
IPB80P04P405ATMA1
DISTI # 30195477
Infineon Technologies AGTrans MOSFET P-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
2085
  • 1000:$0.9403
  • 500:$1.0328
  • 250:$1.1432
  • 100:$1.1884
  • 25:$1.4619
  • 10:$1.4781
  • 8:$1.7262
IPB80P04P405ATMA1
DISTI # 31596107
Infineon Technologies AGTrans MOSFET P-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
2000
  • 2000:$0.9196
  • 1000:$0.9770
IPB80P04P405XT
DISTI # IPB80P04P405ATMA1
Infineon Technologies AGTrans MOSFET P-CH 40V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80P04P405ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$0.9249
  • 2000:$0.8919
  • 4000:$0.8599
  • 6000:$0.8309
  • 10000:$0.8159
IPB80P04P405ATMA1
DISTI # 49AC0289
Infineon Technologies AGMOSFET, AEC-Q100, P-CH, -40V, TO-263,Transistor Polarity:P Channel,Continuous Drain Current Id:-80A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power RoHS Compliant: Yes1000
  • 500:$1.1300
  • 250:$1.2100
  • 100:$1.2900
  • 50:$1.4000
  • 25:$1.5000
  • 10:$1.6100
  • 1:$1.9000
IPB80P04P4-05
DISTI # 726-IPB80P04P4-05
Infineon Technologies AGMOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2
RoHS: Compliant
692
  • 1:$1.9000
  • 10:$1.6100
  • 100:$1.2900
  • 500:$1.1300
  • 1000:$0.9320
IPB80P04P405ATMA1
DISTI # 726-IPB80P04P405ATMA
Infineon Technologies AGMOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2
RoHS: Compliant
23
  • 1:$1.9000
  • 10:$1.6100
  • 100:$1.2900
  • 500:$1.1300
  • 1000:$0.9320
IPB80P04P405ATMA1
DISTI # 2839455
Infineon Technologies AGMOSFET, AEC-Q100, P-CH, -40V, TO-263
RoHS: Compliant
1000
  • 500:£0.8550
  • 250:£0.9170
  • 100:£0.9790
  • 25:£1.2200
  • 5:£1.3300
IPB80P04P405ATMA1
DISTI # 2839455
Infineon Technologies AGMOSFET, AEC-Q100, P-CH, -40V, TO-263
RoHS: Compliant
1000
  • 100:$2.1400
  • 25:$2.6300
  • 5:$3.0200
Bild Teil # Beschreibung
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LT1117IST-5#PBF

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LDO Voltage Regulators 5V Low Dropout Regulator
C3225X5R1A476M250AC

Mfr.#: C3225X5R1A476M250AC

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Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 10V 47uF X5R 20% T: 2.5mm
INA240A1DR

Mfr.#: INA240A1DR

OMO.#: OMO-INA240A1DR-TEXAS-INSTRUMENTS

WIDE CM BI-DIR CURRENT SHUNT MON
AUIRB24427STR

Mfr.#: AUIRB24427STR

OMO.#: OMO-AUIRB24427STR-INFINEON-TECHNOLOGIES

Gate Drivers Dual low-side driver High Current
C3225X5R1A476M250AC

Mfr.#: C3225X5R1A476M250AC

OMO.#: OMO-C3225X5R1A476M250AC-TDK

Multilayer Ceramic Capacitors MLCC - SMD/SMT 47uF 20% 10Volts
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OMO.#: OMO-INA253EVM-TEXAS-INSTRUMENTS

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Verfügbarkeit
Aktie:
973
Auf Bestellung:
2956
Menge eingeben:
Der aktuelle Preis von IPB80P04P4-05 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,34 $
2,34 $
10
2,00 $
20,00 $
100
1,60 $
160,00 $
500
1,40 $
700,00 $
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