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S25FL512SDSMFB010

S25FL512SDSMFB010
Mfr. #:
S25FL512SDSMFB010
Hersteller:
Cypress Semiconductor
Beschreibung:
Flash Memory 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN TRAY PACKING
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
S25FL512SDSMFB010 Datenblatt
Die Zustellung:
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Zahlung:
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ECAD Model:
Mehr Informationen:
S25FL512SDSMFB010 Mehr Informationen S25FL512SDSMFB010 Product Details
Produkteigenschaft
Attributwert
Hersteller
Cypress Semiconductor Corp
Produktkategorie
Erinnerung
Serie
FL-S
Verpackung
Tablett
Montageart
SMD/SMT
Paket-Koffer
SO-16
Betriebstemperatur
-40°C ~ 105°C (TA)
Schnittstelle
SPI-Seriennummer
Spannungsversorgung
2.7 V ~ 3.6 V
Lieferanten-Geräte-Paket
16-SO
Speichergröße
512M (64M x 8)
Speichertyp
FLASH - NOR
Geschwindigkeit
80MHz
Die Architektur
MirrorBit Eclipse
Format-Speicher
BLITZ
Standard
Common Flash-Schnittstelle (CFI)
Oberflächentyp
SPI
Organisation
64 M x 8
Versorgungsstrom-Max
100 mA
Daten-Bus-Breite
8 bit
Versorgungsspannung-Max
3.6 V
Versorgungsspannung-Min
2.7 V
Maximale-Takt-Frequenz
80 MHz
Timing-Typ
Asynchron
Tags
S25FL512SDSMFB, S25FL512SDSM, S25FL512SDS, S25FL512SD, S25FL512S, S25FL5, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
S25FL512S FL-S NOR Flash Memory Devices
Cypress S25FL512S FL-S NOR Flash Memory Devices are VIO VCC 2.7V to 3.6V flash non-volatile memory devices. These devices use 65nm MirrorBit technology. Designed using Eclipse™ architecture with a 512-byte page programming buffer. The 512-Mb S25FL512S FL-S NOR allows users to program up to 256 words (512 bytes) in one operation. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via an SPI and supports traditional SPI single bit serial input and output. Optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. The S25FL512S FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO that transfer address. The S25FL512S FL-S transfer address and read data on both edges of the clock. By using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the read transfer rate instruction can match traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL512S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. The S25FL512S FL-S NOR is ideal for code shadowing, XIP, and data storage.
Teil # Mfg. Beschreibung Aktie Preis
S25FL512SDSMFB010
DISTI # S25FL512SDSMFB010-ND		Cypress SemiconductorIC FLASH 512M SPI 80MHZ 16SOIC
RoHS: Compliant
Min Qty: 1
Container: Tray		Temporarily Out of Stock
  • 1200:$6.8513
  • 720:$7.0875
  • 480:$7.1610
  • 240:$7.5338
  • 50:$8.5576
  • 25:$8.6048
  • 10:$8.8040
  • 1:$9.5100
S25FL512SDSMFB010
DISTI # 727-S25FL512SDSMFB01		Cypress SemiconductorNOR Flash Nor
RoHS: Compliant		240
  • 1:$11.0000
  • 10:$10.0000
  • 25:$9.2500
  • 50:$8.5000
Bild Teil # Beschreibung
S25FL512SDSMFV011

Mfr.#: S25FL512SDSMFV011

OMO.#: OMO-S25FL512SDSMFV011

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S25FL512SDSBHBC10

Mfr.#: S25FL512SDSBHBC10

OMO.#: OMO-S25FL512SDSBHBC10

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S25FL512SAGMFMR13

Mfr.#: S25FL512SAGMFMR13

OMO.#: OMO-S25FL512SAGMFMR13

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S25FL512SAGBHBC13

Mfr.#: S25FL512SAGBHBC13

OMO.#: OMO-S25FL512SAGBHBC13-CYPRESS-SEMICONDUCTOR

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S25FL512SAGMFB010

Mfr.#: S25FL512SAGMFB010

OMO.#: OMO-S25FL512SAGMFB010-CYPRESS-SEMICONDUCTOR

 Flash Memory 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN TRAY PACKING; GT GRADE
S25FL512SDPMFV010

Mfr.#: S25FL512SDPMFV010

OMO.#: OMO-S25FL512SDPMFV010-CYPRESS-SEMICONDUCTOR

 Flash Memory 512-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 66-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, SO3016 IN TRAY PACKING
S25FL512SDPBHV310

Mfr.#: S25FL512SDPBHV310

OMO.#: OMO-S25FL512SDPBHV310-CYPRESS-SEMICONDUCTOR

 IC FLASH 512M SPI 66MHZ 24BGA FL-S
S25FL512SAGBHID10

Mfr.#: S25FL512SAGBHID10

OMO.#: OMO-S25FL512SAGBHID10-CYPRESS-SEMICONDUCTOR

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S25FL512SAGMFIG11

Mfr.#: S25FL512SAGMFIG11

OMO.#: OMO-S25FL512SAGMFIG11-CYPRESS-SEMICONDUCTOR

 Flash 512Mb 3V 133MHz Serial NOR Flash
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von S25FL512SDSMFB010 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
10,28 $
10,28 $
10
9,76 $
97,63 $
100
9,25 $
924,92 $
500
8,74 $
4 367,65 $
1000
8,22 $
8 221,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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