SI1424EDH-T1-GE3

Name: Vishay - SI1424EDH-T1-GE3
Brand: Vishay
SKU: OMO-2820123
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI1424EDH-T1-GE3
Hersteller:: Vishay
Beschreibung:: IGBT Transistors MOSFET N-CHANNEL 20-V (D-S) MOSFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI1424EDH-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: VISHAY

Produktkategorie: FETs - Einzeln

Verpackung: Spule

Gewichtseinheit: 0.000265 oz

Montageart: SMD/SMT

Paket-Koffer: SOT-363-6

Technologie: Si

Anzahl der Kanäle: 1 Channel

Transistor-Typ: 1 N-Channel

Transistor-Polarität: N-Kanal

Tags: SI142, SI14, SI1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI1424EDH-T1-GE3 Beschreibung

***ied Electronics & Automation: SI1424EDH-T1-GE3 N-channel MOSFET Transistor; 4 A; 20 V; 6-Pin SOT-363

***ical: Trans MOSFET N-CH 20V 4A 6-Pin SC-70 T/R

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: MOSFET, N CH, W/D, 20V, 4A, SOT363; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.027ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:2.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-363; No. of Pins:6; MSL:-; Operating Temperature Range:-55°C to +150°C

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI1424EDH-T1-GE3 DISTI # V72:2272_07432209	Vishay Intertechnologies	Trans MOSFET N-CH 20V 4A 6-Pin SC-70 T/R	2400	1000:$0.1125 500:$0.1516 250:$0.1819 100:$0.1935 25:$0.2737 10:$0.2925 1:$0.4370
SI1424EDH-T1-GE3 DISTI # SI1424EDH-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 4A SOT-363 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8220In Stock	1000:$0.1428 500:$0.1903 100:$0.2776 10:$0.4040 1:$0.5200
SI1424EDH-T1-GE3 DISTI # SI1424EDH-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 4A SOT-363 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8220In Stock	1000:$0.1428 500:$0.1903 100:$0.2776 10:$0.4040 1:$0.5200
SI1424EDH-T1-GE3 DISTI # SI1424EDH-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 4A SOT-363 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	3000:$0.1270
SI1424EDH-T1-GE3 DISTI # 25975665	Vishay Intertechnologies	Trans MOSFET N-CH 20V 4A 6-Pin SC-70 T/R	2400	1000:$0.1125 500:$0.1516 250:$0.1819 100:$0.1935 72:$0.2737
SI1424EDH-T1-GE3 DISTI # SI1424EDH-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 4A 6-Pin SC-70 T/R - Tape and Reel (Alt: SI1424EDH-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1009 6000:$0.0979 12000:$0.0939 18000:$0.0919 30000:$0.0889
SI1424EDH-T1-GE3 DISTI # 64T4052	Vishay Intertechnologies	MOSFET, N CHANNEL, W/D, 20V, 4A, SOT363,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.027ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV RoHS Compliant: Yes	2650	1:$0.4600 10:$0.3110 25:$0.2770 50:$0.2440 100:$0.2100 250:$0.1890 500:$0.1680 1000:$0.1260
SI1424EDH-T1-GE3 DISTI # 53T5223	Vishay Intertechnologies	MOSFET Transistor, N Channel, 4 A, 20 V, 0.027 ohm, 4.5 V, 400 mV	0	1:$0.1470 5000:$0.1390 10000:$0.1220 20000:$0.1080 30000:$0.1000 50000:$0.0910
SI1424EDH-T1-GE3 DISTI # 70616146	Vishay Siliconix	SI1424EDH-T1-GE3 N-channel MOSFET Transistor,4 A,20 V,6-Pin SOT-363 RoHS: Compliant	0	300:$0.2300 600:$0.2250 1500:$0.2190 3000:$0.2090 7500:$0.1960
SI1424EDH-T1-GE3 DISTI # 78-SI1424EDH-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs SC70-6 RoHS: Compliant	5485	1:$0.4600 10:$0.3110 100:$0.2100 500:$0.1680 1000:$0.1260 3000:$0.1160
SI1424EDHT1GE3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	Europe - 3000
SI1424EDH-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs SC70-6 RoHS: Compliant	Americas -
SI1424EDH-T1-GE3 DISTI # 2056678	Vishay Intertechnologies	MOSFET, N CH, W/D,20V, 4A, SOT363 RoHS: Compliant	2760	5:£0.2700 25:£0.2590 100:£0.1610 250:£0.1450 500:£0.1280
SI1424EDH-T1-GE3 DISTI # C1S803604015320	Vishay Intertechnologies	MOSFETs	2400	250:$0.1819 100:$0.1935 25:$0.2737
SI1424EDH-T1-GE3 DISTI # 2056678RL	Vishay Intertechnologies	MOSFET, N CH, W/D,20V, 4A, SOT363 RoHS: Compliant	0	1:$0.7280 10:$0.4930 100:$0.3320 500:$0.2660 1000:$0.2000 3000:$0.1890
SI1424EDH-T1-GE3 DISTI # 2056678	Vishay Intertechnologies	MOSFET, N CH, W/D,20V, 4A, SOT363 RoHS: Compliant	2650	1:$0.7280 10:$0.4930 100:$0.3320 500:$0.2660 1000:$0.2000 3000:$0.1890

Verwandte Produkte

Bild

Teil #

Beschreibung

Mfr.#: SI1424EDH-T1-GE3

OMO.#: OMO-SI1424EDH-T1-GE3

MOSFET 20V Vds 8V Vgs SC70-6

Mfr.#: SI1424EDH-T1-E3

OMO.#: OMO-SI1424EDH-T1-E3-1190

Neu und Original

Mfr.#: SI1424EDH-T1-GE3

OMO.#: OMO-SI1424EDH-T1-GE3-VISHAY

IGBT Transistors MOSFET N-CHANNEL 20-V (D-S) MOSFET

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2500
Menge eingeben:

Der aktuelle Preis von SI1424EDH-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,13 $~~; ~~0,13 $~~

10: ~~0,13 $~~; ~~1,27 $~~

100: ~~0,12 $~~; ~~12,00 $~~

500: ~~0,11 $~~; ~~56,65 $~~

1000: ~~0,11 $~~; ~~106,70 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SI142 11
SI14 148
SI1 1080

SI1424EDH-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes