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FDMT800100DC

FDMT800100DC
Mfr. #:
FDMT800100DC
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET FET 100V 2.95 MOHM PQFN88
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMT800100DC Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDMT800100DC Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DualCool-88-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
162 A
Rds On - Drain-Source-Widerstand:
5.39 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
79 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
156 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
3.3 mm
Serie:
FDMT800100DC
Transistortyp:
1 N-channel
Breite:
3.3 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
66 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
18 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
40 ns
Typische Einschaltverzögerungszeit:
29 ns
Gewichtseinheit:
0.008766 oz
Tags
FDMT8001, FDMT8, FDMT, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
PT5 100V/20V Nch Dual Cool PowerTrench MOSFET - 8LD, PQFN, NON-JEDEC, MV, 8.0X8.0 MM
***Semiconductor
N-Channel PowerTrench® MOSFET, Dual Cool™ 88, 100V, 162A, 2.95mΩ
***ical
Trans MOSFET N-CH Si 100V 24A 8-Pin QFN EP T/R
***et Europe
Trans MOSFET N-CH 100V 24A 8-Pin PQFN T/R
***et
PT5 100V/20V NCH DUAL COOL POWERTRENCH MOSFET
***ure Electronics
MOSFET N-CH 100V 24A
***i-Key
MOSFET P-CH 20V
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 162A, DUAL COOL 88; Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:156W; Transistor Case Style:Dual Cool 88; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:PowerTrench Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CA-N, 100V 162A DOP. FREDDO 5688; Polarità Transistor:Canale N; Corrente Continua di Drain Id:162A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0023ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:156W; Modello Case Transistor:Dual Cool 88; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:PowerTrench Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
FDMT8001x N-Channel Dual Cool™ PowerTrench MOSFET
ON Semiconductor FDMT8001x N-channel dual cool™ PowerTrench® MOSFETs combine Dual Cool™ and PowerTrench® processes to offer very low RDS(on) and maintain excellent switching performance. The FDMT8001x maintains extremely low junction to ambient resistance.Learn More
Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
Teil # Mfg. Beschreibung Aktie Preis
FDMT800100DC
DISTI # FDMT800100DCCT-ND		ON SemiconductorMOSFET N-CH 100V 24A
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1650In Stock
  • 1000:$3.8239
  • 500:$4.3904
  • 100:$5.2401
  • 10:$6.3730
  • 1:$7.0800
FDMT800100DC
DISTI # FDMT800100DCDKR-ND		ON SemiconductorMOSFET N-CH 100V 24A
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1650In Stock
  • 1000:$3.8239
  • 500:$4.3904
  • 100:$5.2401
  • 10:$6.3730
  • 1:$7.0800
FDMT800100DC
DISTI # FDMT800100DCTR-ND		ON SemiconductorMOSFET N-CH 100V 24A
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$3.5750
FDMT800100DC
DISTI # FDMT800100DC		ON SemiconductorTrans MOSFET N-CH 100V 24A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMT800100DC)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$3.1900
  • 6000:$3.1900
  • 12000:$3.1900
  • 18000:$3.0900
  • 30000:$2.9900
FDMT800100DC
DISTI # 49Y8342		ON SemiconductorFET 100V 2.95 MOHM PQFN88 / REEL0
  • 1:$5.0000
FDMT800100DC
DISTI # 57AC1882		ON SemiconductorMOSFET, N-CH, 100V, 162A, DUAL COOL 88,Transistor Polarity:N Channel,Continuous Drain Current Id:162A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes425
  • 1:$5.9500
  • 10:$5.3800
  • 25:$5.1300
  • 50:$4.7900
  • 100:$4.4500
  • 250:$4.2600
  • 500:$3.8800
  • 1000:$3.3800
FDMT800100DC
DISTI # 512-FDMT800100DC		ON SemiconductorMOSFET FET 100V 2.95 MOHM PQFN88
RoHS: Compliant		550
  • 1:$5.9500
  • 10:$5.3800
  • 25:$5.1300
  • 100:$4.4500
  • 250:$4.2600
  • 500:$3.8800
  • 1000:$3.3800
  • 3000:$3.2600
FDMT800100DC
DISTI # 2860230		ON SemiconductorMOSFET, N-CH, 100V, 162A, DUAL COOL 88
RoHS: Compliant		600
  • 1:£5.0700
  • 10:£3.9600
  • 100:£3.4300
  • 250:£3.2800
  • 500:£3.0000
FDMT800100DC
DISTI # 2860230		ON SemiconductorMOSFET, N-CH, 100V, 162A, DUAL COOL 88
RoHS: Compliant		425
  • 1:$11.2900
  • 10:$10.1600
  • 100:$8.3600
  • 500:$7.0000
  • 1000:$6.1000
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von FDMT800100DC dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
5,94 $
5,94 $
10
5,37 $
53,70 $
25
5,12 $
128,00 $
100
4,45 $
445,00 $
250
4,25 $
1 062,50 $
500
3,87 $
1 935,00 $
1000
3,37 $
3 370,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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