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SI4420BDY-T1-GE3

SI4420BDY-T1-GE3
Mfr. #:
SI4420BDY-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 30V 9.5A 8-SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4420BDY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI4420BDY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Verpackung
Spule
Teil-Aliasnamen
SI4420BDY-GE3
Gewichtseinheit
0.006596 oz
Montageart
SMD/SMT
Paket-Koffer
SOIC-Narrow-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
1.4 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
11 ns
Anstiegszeit
11 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
9.5 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
8.5 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
40 ns
Typische-Einschaltverzögerungszeit
15 ns
Kanal-Modus
Erweiterung
Tags
SI4420BDY-T, SI4420B, SI4420, SI442, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 9.5A 8-Pin SOIC N T/R
***ure Electronics
30V, 13.5A, 0.0085ohm,TrenchFET Power MOSFET, N-Channel, SO-8
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:13500mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.011ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:1.4W ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4420BDY-T1-GE3
DISTI # SI4420BDY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 9.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		672In Stock
  • 500:$0.4532
  • 100:$0.6118
  • 10:$0.7930
  • 1:$0.9100
SI4420BDY-T1-GE3
DISTI # SI4420BDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 9.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    SI4420BDY-T1-GE3
    DISTI # SI4420BDY-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 30V 9.5A 8-SOIC
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 2500:$0.3190
    SI4420BDY-T1-GE3
    DISTI # SI4420BDY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4420BDY-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.8289
    • 5000:$0.8049
    • 10000:$0.7719
    • 15000:$0.7499
    • 25000:$0.7299
    SI4420BDY-T1-GE3
    DISTI # 16P3736    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 13.5A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:13.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.011ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 1:$1.2600
    • 10:$1.0400
    • 25:$0.9580
    • 50:$0.8760
    • 100:$0.7940
    • 250:$0.7380
    • 500:$0.6820
    SI4420BDY-T1-GE3
    DISTI # 781-SI4420BDY-T1-GE3    		Vishay IntertechnologiesMOSFET 30V 13.5A 2.5W 8.5mohm @ 10V
    RoHS: Compliant    		2296
    • 1:$1.2600
    • 10:$1.0400
    • 100:$0.7940
    • 500:$0.6820
    • 1000:$0.5390
    • 2500:$0.5030
    • 5000:$0.4780
    • 10000:$0.4670
    SI4420BDY-T1-GE3Vishay Intertechnologies 1458
      Bild Teil # Beschreibung
      SI4420BDY-T1-E3

      Mfr.#: SI4420BDY-T1-E3

      OMO.#: OMO-SI4420BDY-T1-E3

      		 MOSFET 30V 13.5A 0.0085Ohm
      SI4420BDY-T1-GE3

      Mfr.#: SI4420BDY-T1-GE3

      OMO.#: OMO-SI4420BDY-T1-GE3

      		 MOSFET 30V 13.5A 2.5W 8.5mohm @ 10V
      SI4420BDY-T1-E3-CUT TAPE

      Mfr.#: SI4420BDY-T1-E3-CUT TAPE

      OMO.#: OMO-SI4420BDY-T1-E3-CUT-TAPE-1190

      		 Neu und Original
      SI4420BDY

      Mfr.#: SI4420BDY

      OMO.#: OMO-SI4420BDY-1190

      		 Neu und Original
      SI4420BDY-T1

      Mfr.#: SI4420BDY-T1

      OMO.#: OMO-SI4420BDY-T1-1190

      		 Neu und Original
      SI4420BDY-T1-E3

      Mfr.#: SI4420BDY-T1-E3

      OMO.#: OMO-SI4420BDY-T1-E3-VISHAY

      		 MOSFET N-CH 30V 9.5A 8-SOIC
      SI4420BDY-T1-E3-PBF

      Mfr.#: SI4420BDY-T1-E3-PBF

      OMO.#: OMO-SI4420BDY-T1-E3-PBF-1190

      		 Neu und Original
      SI4420BDY-T1-GE3

      Mfr.#: SI4420BDY-T1-GE3

      OMO.#: OMO-SI4420BDY-T1-GE3-VISHAY

      		 MOSFET N-CH 30V 9.5A 8-SOIC
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von SI4420BDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,48 $
      0,48 $
      10
      0,45 $
      4,55 $
      100
      0,43 $
      43,07 $
      500
      0,41 $
      203,35 $
      1000
      0,38 $
      382,80 $
      Beginnen mit
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