IPB60R060P7ATMA1

Mfr. #:: IPB60R060P7ATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET HIGH POWER_NEW
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPB60R060P7ATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: IPB60R060P7ATMA1 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-263-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 600 V

Id - Kontinuierlicher Drainstrom:: 48 A

Rds On - Drain-Source-Widerstand:: 49 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 3 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 67 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 164 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Transistortyp:: 1 N-Channel

Marke:: Infineon-Technologien

Abfallzeit:: 4 ns

Produktart:: MOSFET

Anstiegszeit:: 12 ns

Werkspackungsmenge:: 1000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 79 ns

Typische Einschaltverzögerungszeit:: 23 ns

Teil # Aliase:: IPB60R060P7 SP001664882

Tags: IPB60R0, IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R060P7ATMA1 Beschreibung

***ure Electronics: Single N-Channel 600 V 60 mOhm 67 nC CoolMOS Power Mosfet - D2PAK

***et: CoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK

***nell: MOSFET, N-CH, 600V, 48A, TO-263

***ark: Mosfet, N-Ch, 600V, 48A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.049Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

IPB60R060P7ATMA1 Mehr Informationen

600V CoolMOS P7 MOSFETs: Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPB60R060P7ATMA1 DISTI # V72:2272_18787574	Infineon Technologies AG	HIGH POWER_NEW	890	500:$3.9910 250:$4.2699 100:$4.6830 25:$4.8540 10:$5.3930 1:$6.9707
IPB60R060P7ATMA1 DISTI # V36:1790_18787574	Infineon Technologies AG	HIGH POWER_NEW	0	1000000:$2.8090 500000:$2.8120 100000:$3.0510 10000:$3.4740 1000:$3.5450
IPB60R060P7ATMA1 DISTI # IPB60R060P7ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1692In Stock	500:$4.3294 100:$5.0857 10:$6.2070 1:$6.9100
IPB60R060P7ATMA1 DISTI # IPB60R060P7ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1692In Stock	500:$4.3294 100:$5.0857 10:$6.2070 1:$6.9100
IPB60R060P7ATMA1 DISTI # IPB60R060P7ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	2000:$3.3677 1000:$3.5449
IPB60R060P7ATMA1 DISTI # 33704475	Infineon Technologies AG	HIGH POWER_NEW	1000	1000:$5.2188
IPB60R060P7ATMA1 DISTI # 32882183	Infineon Technologies AG	HIGH POWER_NEW	890	2:$6.9707
IPB60R060P7ATMA1 DISTI # IPB60R060P7	Infineon Technologies AG	CoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK (Alt: IPB60R060P7) RoHS: Compliant Min Qty: 1000	Asia - 400	50000:$3.4949 25000:$3.5463 10000:$3.5993 5000:$3.6538 3000:$3.7680 2000:$3.8895 1000:$4.0192
IPB60R060P7ATMA1 DISTI # IPB60R060P7ATMA1	Infineon Technologies AG	CoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK - Tape and Reel (Alt: IPB60R060P7ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$2.9900 6000:$3.0900 4000:$3.1900 2000:$3.2900 1000:$3.3900
IPB60R060P7ATMA1 DISTI # SP001664882	Infineon Technologies AG	CoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK (Alt: SP001664882) RoHS: Compliant Min Qty: 1000	Europe - 0	10000:€2.5900 6000:€2.7900 4000:€2.9900 2000:€3.1900 1000:€3.2900
IPB60R060P7ATMA1 DISTI # 49AC7993	Infineon Technologies AG	MOSFET, N-CH, 600V, 48A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:48A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.049ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	150	500:$4.0400 250:$4.5000 100:$4.7500 50:$4.9900 25:$5.2300 10:$5.4700 1:$6.4400
IPB60R060P7ATMA1 DISTI # 726-IPB60R060P7ATMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	592	1:$6.3800 10:$5.4200 100:$4.7000 250:$4.4600 500:$4.0000 1000:$3.3700 2000:$3.2000
IPB60R060P7ATMA1	Infineon Technologies AG	Single N-Channel 600 V 60 mOhm 67 nC CoolMOS Power Mosfet - D2PAK RoHS: Not Compliant	1000Reel	1000:$3.1800
IPB60R060P7ATMA1 DISTI # 2841641	Infineon Technologies AG	MOSFET, N-CH, 600V, 48A, TO-263 RoHS: Compliant	146	1000:$4.8300 500:$4.9300 250:$5.1900 100:$5.4900 10:$6.2100 1:$6.6400
IPB60R060P7ATMA1 DISTI # 2841641	Infineon Technologies AG	MOSFET, N-CH, 600V, 48A, TO-263	406	500:£3.1100 250:£3.4700 100:£3.6500 10:£4.2100 1:£5.4700
IPB60R060P7ATMA1 DISTI # XSFP00000158368	Infineon Technologies AG	Single N-Channel 600 V 60 mOhm 67 nCCoolMOSPowerMosfet - D2PAK RoHS: Compliant	2000 in Stock0 on Order	2000:$4.2400 1000:$4.5400

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	Mfr.#: REF3025AIDBZR OMO.#: OMO-REF3025AIDBZR-TEXAS-INSTRUMENTS	Voltage References 2.5V 50ppm/DegC 50uA SOT23-3 Series
	Mfr.#: IPD60R180P7ATMA1 OMO.#: OMO-IPD60R180P7ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 18A TO252-3

Verfügbarkeit

Aktie:: 572
Auf Bestellung:: 2555
Menge eingeben:

Der aktuelle Preis von IPB60R060P7ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~6,38 $~~; ~~6,38 $~~

10: ~~5,42 $~~; ~~54,20 $~~

100: ~~4,70 $~~; ~~470,00 $~~

250: ~~4,46 $~~; ~~1 115,00 $~~

500: ~~4,00 $~~; ~~2 000,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IPB60R060P7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes