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A3T19H455W23SR6

A3T19H455W23SR6
Mfr. #:
A3T19H455W23SR6
Hersteller:
NXP Semiconductors
Beschreibung:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
A3T19H455W23SR6 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
A3T19H455W23SR6 DatasheetA3T19H455W23SR6 Datasheet (P4-P6)A3T19H455W23SR6 Datasheet (P7-P9)A3T19H455W23SR6 Datasheet (P10-P12)A3T19H455W23SR6 Datasheet (P13-P15)A3T19H455W23SR6 Datasheet (P16)
ECAD Model:
Mehr Informationen:
A3T19H455W23SR6 Mehr Informationen A3T19H455W23SR6 Product Details
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
Dualer N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
3.6 A
Vds - Drain-Source-Durchbruchspannung:
- 500 mV, 65 V
Gewinnen:
16.4 dB
Ausgangsleistung:
81 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
ACP-1230S-4L2S
Verpackung:
Spule
Arbeitsfrequenz:
1930 MHz to 1990 MHz
Typ:
HF-Leistungs-MOSFET
Marke:
NXP Semiconductors
Anzahl der Kanäle:
2 Channel
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
150
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 6 V, 10 V
Vgs th - Gate-Source-Schwellenspannung:
1.4 V
Teil # Aliase:
935363503128
Tags
A3T1, A3T
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
Teil # Mfg. Beschreibung Aktie Preis
A3T19H455W23SR6
DISTI # A3T19H455W23SR6-ND		NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 150:$119.7000
A3T19H455W23SR6
DISTI # A3T19H455W23SR6		Avnet, Inc.Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V - Tape and Reel (Alt: A3T19H455W23SR6)
RoHS: Compliant
Min Qty: 150
Container: Reel		Americas - 0
    A3T19H455W23SR6
    DISTI # 51AC1917    		NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTOR, 1930-1990 MHZ, 81 W AVG., 30 V REEL0
    • 100:$112.5000
    • 50:$119.7000
    • 25:$121.5000
    • 10:$123.3000
    • 5:$126.9000
    • 1:$130.5000
    A3T19H455W23SR6
    DISTI # 771-A3T19H455W23SR6    		NXP SemiconductorsRF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V
    RoHS: Compliant    		0
    • 150:$111.3500
    Bild Teil # Beschreibung
    A3T19H455W23SR6

    Mfr.#: A3T19H455W23SR6

    OMO.#: OMO-A3T19H455W23SR6

    		 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V
    A3T19H455W23SR6

    Mfr.#: A3T19H455W23SR6

    OMO.#: OMO-A3T19H455W23SR6-NXP-SEMICONDUCTORS

    		 AIRFAST RF POWER LDMOS TRANSISTO
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von A3T19H455W23SR6 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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