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AOK5N100L

AOK5N100L
Mfr. #:
AOK5N100L
Hersteller:
Alpha & Omega Semiconductor Inc
Beschreibung:
MOSFET N-CH 1000V 4A TO247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AOK5N100L Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AOK5N100L DatasheetAOK5N100L Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Tags
AOK5, AOK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 1000V 4A TO247
***r Electronics
Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFETs in TO-247 package
***ical
Trans MOSFET N-CH 1.05KV 4A 3-Pin(3+Tab) TO-247 Tube
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-247AC;PD 160W;VGS +/-20V
***eco
Transistor MOSFET Negative Channel 100 Volt 42A 3-Pin(3+Tab) TO-247AC
***ure Electronics
Single N-Channel 100V 36 mOhm 110 nC HEXFET® Power Mosfet - TO-247AC
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 100V, 39A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:100V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.1°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power; N-Channel; 0.052 Ohms (Max.) @ 10 V, 16 A; 100 V (Min.); 40 degC
***el Electronic
In a Tube of 25, IRFP140NPBF N-Channel MOSFET, 33 A, 100 V HEXFET, 3-Pin TO-247AC Infineon
***ure Electronics
Single N-Channel 100 V 0.052 Ohm 94 nC HEXFET® Power Mosfet - TO-247-3AC
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:33A; Package / Case:TO-247AC; Power Dissipation Pd:94W; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.075Ohm;ID 30A;TO-247AC;PD 214W;VGS +/-20V
***el Electronic
INFINEON IRFP250N MOSFET Transistor, N Channel, 30 A, 200 V, 75 mohm, 10 V
***ure Electronics
Single N-Channel 200 V 0.075 Ohm 123 nC HEXFET® Power Mosfet - TO-247AC
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
***roFlash
Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, N, 200V, 30A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:200V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:214W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Junction to Case Thermal Resistance A:0.83°C/W; Package / Case:TO-247AC; Power Dissipation Pd:214W; Power Dissipation Pd:214W; Pulse Current Idm:120A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***ical
Trans IGBT Chip N-CH 650V 40A 144000mW 3-Pin(3+Tab) TO-247N Bulk
***ment14 APAC
IGBT, SINGLE, 650V, 40A, TO-247N-3
***ark
Igbt, Single, 650V, 40A, To-247N-3; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:144W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247N; No. Of Pins:3Pins; Rohs Compliant: Yes
***roFlash
Trans IGBT Chip N-CH 650V 40A 144000mW 3-Pin(3+Tab) TO-247N Bulk
***ure Electronics
650V 20A TO-247N Field Stop Trench IGBT
***ark
Igbt, Single, 650V, 40A, To-247N-3; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:144W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247N; No. Of Pins:3Pins; Rohs Compliant: Yes
***i-Key
IGBT TRNCH FIELD 650V 40A TO247N
Teil # Mfg. Beschreibung Aktie Preis
AOK5N100L
DISTI # 785-1425-5-ND		Alpha & Omega SemiconductorMOSFET N-CH 1000V 4A TO247
RoHS: Compliant
Min Qty: 360
Container: Tube		Temporarily Out of Stock
  • 360:$1.4100
Bild Teil # Beschreibung
AOK50B65H1

Mfr.#: AOK50B65H1

OMO.#: OMO-AOK50B65H1-ALPHA-AND-OMEGA-SEMICONDUCTOR

 IGBT 650V 50A TO-247
AOK50B60D1

Mfr.#: AOK50B60D1

OMO.#: OMO-AOK50B60D1-ALPHA-AND-OMEGA-SEMICONDUCTOR

 IGBT 600V 100A 312W TO247
AOK50B65M2

Mfr.#: AOK50B65M2

OMO.#: OMO-AOK50B65M2-ALPHA-AND-OMEGA-SEMICONDUCTOR

 IGBT 650V 50A TO247
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Mfr.#: AOK53S60

OMO.#: OMO-AOK53S60-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH
AOK53S60,K53S60

Mfr.#: AOK53S60,K53S60

OMO.#: OMO-AOK53S60-K53S60-1190

 Neu und Original
AOK53S60L

Mfr.#: AOK53S60L

OMO.#: OMO-AOK53S60L-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 600V 53A TO247
AOK53S65

Mfr.#: AOK53S65

OMO.#: OMO-AOK53S65-1190

 Neu und Original
AOK5B60D

Mfr.#: AOK5B60D

OMO.#: OMO-AOK5B60D-1190

 Neu und Original
AOK5N100

Mfr.#: AOK5N100

OMO.#: OMO-AOK5N100-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 1000V 4A TO247
AOK5N100L

Mfr.#: AOK5N100L

OMO.#: OMO-AOK5N100L-ALPHA-AND-OMEGA-SEMICONDUCTOR

 MOSFET N-CH 1000V 4A TO247
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von AOK5N100L dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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