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SI2365EDS-T1-GE3

SI2365EDS-T1-GE3
Mfr. #:
SI2365EDS-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -20V Vds 8V Vgs SOT-23
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2365EDS-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2365EDS-T1-GE3 DatasheetSI2365EDS-T1-GE3 Datasheet (P4-P6)SI2365EDS-T1-GE3 Datasheet (P7-P9)SI2365EDS-T1-GE3 Datasheet (P10)
ECAD Model:
Mehr Informationen:
SI2365EDS-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
5.9 A
Rds On - Drain-Source-Widerstand:
26.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
8 V
Qg - Gate-Ladung:
36 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.7 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.45 mm
Länge:
2.9 mm
Serie:
SI2
Transistortyp:
1 P-Channel
Breite:
1.6 mm
Marke:
Vishay / Siliconix
Abfallzeit:
14 ns
Produktart:
MOSFET
Anstiegszeit:
21 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
62 ns
Typische Einschaltverzögerungszeit:
22 ns
Teil # Aliase:
SI4816DY-T1-E3-S
Gewichtseinheit:
0.000282 oz
Tags
SI2365, SI236, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI2365EDS-T1-GE3 P-channel MOSFET Transistor; 4.7 A; 20 V; 3-Pin TO-236
***ical
Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
***ponent Sense
TRANS TP0101K MOS-FET ENH P 20V 0.58A
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Teil # Mfg. Beschreibung Aktie Preis
SI2365EDS-T1-GE3
DISTI # V36:1790_09216880		Vishay IntertechnologiesP-CHANNEL 20-V (D-S) MOSFET
RoHS: Compliant		0
  • 3000000:$0.0774
  • 1500000:$0.0775
  • 300000:$0.0861
  • 30000:$0.1041
  • 3000:$0.1073
SI2365EDS-T1-GE3
DISTI # V72:2272_09216880		Vishay IntertechnologiesP-CHANNEL 20-V (D-S) MOSFET
RoHS: Compliant		0
    SI2365EDS-T1-GE3
    DISTI # SI2365EDS-T1-GE3CT-ND    		Vishay SiliconixMOSFET P-CH 20V 5.9A TO-236
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		69696In Stock
    • 1000:$0.1023
    • 500:$0.1330
    • 100:$0.1944
    • 10:$0.3120
    • 1:$0.4100
    SI2365EDS-T1-GE3
    DISTI # SI2365EDS-T1-GE3DKR-ND    		Vishay SiliconixMOSFET P-CH 20V 5.9A TO-236
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		69696In Stock
    • 1000:$0.1023
    • 500:$0.1330
    • 100:$0.1944
    • 10:$0.3120
    • 1:$0.4100
    SI2365EDS-T1-GE3
    DISTI # SI2365EDS-T1-GE3TR-ND    		Vishay SiliconixMOSFET P-CH 20V 5.9A TO-236
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		69000In Stock
    • 150000:$0.0629
    • 75000:$0.0646
    • 30000:$0.0720
    • 15000:$0.0770
    • 6000:$0.0844
    • 3000:$0.0894
    SI2365EDS-T1-GE3
    DISTI # SI2365EDS-T1-GE3    		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.5A 3-Pin TO-236 T/R (Alt: SI2365EDS-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 15000
    • 150000:$0.0770
    • 75000:$0.0783
    • 30000:$0.0797
    • 15000:$0.0825
    • 9000:$0.0856
    • 6000:$0.0888
    • 3000:$0.0924
    SI2365EDS-T1-GE3
    DISTI # SI2365EDS-T1-GE3    		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.5A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2365EDS-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.0606
    • 18000:$0.0623
    • 12000:$0.0641
    • 6000:$0.0668
    • 3000:$0.0688
    SI2365EDS-T1-GE3
    DISTI # SI2365EDS-T1-GE3    		Vishay IntertechnologiesTrans MOSFET P-CH 20V 4.5A 3-Pin TO-236 T/R (Alt: SI2365EDS-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.0659
    • 18000:€0.0709
    • 12000:€0.0769
    • 6000:€0.0889
    • 3000:€0.1309
    SI2365EDS-T1-GE3
    DISTI # 01AC4983    		Vishay IntertechnologiesMOSFET, P-CH, -20V, -5.9A, SOT-23,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.9A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0265ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power RoHS Compliant: Yes10364
    • 1000:$0.0940
    • 500:$0.1180
    • 250:$0.1310
    • 100:$0.1430
    • 50:$0.1740
    • 25:$0.2060
    • 10:$0.2370
    • 1:$0.4050
    SI2365EDS-T1-GE3
    DISTI # 05AC9484    		Vishay IntertechnologiesMOSFET, P-CH, -20V, -5.9A, SOT-23,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.9A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0265ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power RoHS Compliant: Yes36000
    • 1:$0.0940
    • 3000:$0.0940
    SI2365EDS-T1-GE3
    DISTI # 70AC6497    		Vishay IntertechnologiesMOSFET, P-CH, -20V, -5.9A, SOT-23,Transistor Polarity:P Channel,Continuous Drain Current Id:-5.9A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0265ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,MSL:- RoHS Compliant: Yes0
    • 1000:$0.0990
    • 500:$0.1280
    • 250:$0.1430
    • 100:$0.1590
    • 50:$0.2150
    • 25:$0.2720
    • 1:$0.4750
    SI2365EDS-T1-GE3
    DISTI # 70459515    		Vishay SiliconixSI2365EDS-T1-GE3 P-channel MOSFET Transistor,4.7 A,20 V,3-Pin TO-236
    RoHS: Compliant    		0
    • 25:$0.1340
    • 250:$0.1250
    SI2365EDS-T1-GE3
    DISTI # 78-SI2365EDS-T1-GE3    		Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs SOT-23
    RoHS: Compliant    		0
    • 1:$0.4600
    • 10:$0.2680
    • 100:$0.1560
    • 500:$0.1260
    • 1000:$0.0970
    • 3000:$0.0850
    • 6000:$0.0800
    • 9000:$0.0730
    • 24000:$0.0680
    SI2365EDS-T1-GE3
    DISTI # 8123139P    		Vishay IntertechnologiesTRANS MOSFET P-CH 20V 4.5A 3-PIN, RL1650
    • 3000:£0.0680
    • 1500:£0.0780
    • 600:£0.1000
    • 300:£0.1090
    SI2365EDS-T1-GE3
    DISTI # 8123139    		Vishay IntertechnologiesTRANS MOSFET P-CH 20V 4.5A 3-PIN, PK4500
    • 3000:£0.0680
    • 1500:£0.0780
    • 600:£0.1000
    • 300:£0.1090
    • 50:£0.1810
    SI2365EDS-T1-GE3
    DISTI # 2646370    		Vishay IntertechnologiesMOSFET, P-CH, -20V, -5.9A, SOT-23
    RoHS: Compliant    		13836
    • 1000:$0.1550
    • 500:$0.2010
    • 100:$0.2930
    • 10:$0.4700
    • 1:$0.6200
    SI2365EDS-T1-GE3
    DISTI # 2679680    		Vishay IntertechnologiesMOSFET, P-CH, -20V, -5.9A, SOT-23
    RoHS: Compliant    		33000
    • 75000:$0.1000
    • 30000:$0.1090
    • 15000:$0.1160
    • 6000:$0.1280
    • 3000:$0.1350
    SI2365EDS-T1-GE3
    DISTI # 2679680    		Vishay IntertechnologiesMOSFET, P-CH, -20V, -5.9A, SOT-2333000
    • 9000:£0.0530
    • 3000:£0.0632
    SI2365EDS-T1-GE3
    DISTI # TMOSS6874    		Vishay IntertechnologiesP-CH20V 5,9A 32mOhm SOT23
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 3000:$0.0713
    SI2365EDS-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs SOT-23
    RoHS: Compliant    		Americas - 156000
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1500
      Menge eingeben:
      Der aktuelle Preis von SI2365EDS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
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      ext. Preis
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      0,46 $
      0,46 $
      10
      0,27 $
      2,68 $
      100
      0,16 $
      15,60 $
      500
      0,13 $
      63,00 $
      1000
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      97,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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