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2SC3646S-TD-E

2SC3646S-TD-E
Mfr. #:
2SC3646S-TD-E
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT BIP NPN 1A 100V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2SC3646S-TD-E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
PCP-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
100 V
Kollektor- Basisspannung VCBO:
120 V
Emitter- Basisspannung VEBO:
6 V
Kollektor-Emitter-Sättigungsspannung:
0.1 V
Maximaler DC-Kollektorstrom:
2 A
Bandbreitenprodukt fT gewinnen:
120 MHz
Maximale Betriebstemperatur:
+ 150 C
Serie:
2SC3646
DC-Stromverstärkung hFE Max:
280
Verpackung:
Spule
Marke:
ON Semiconductor
Kontinuierlicher Kollektorstrom:
1 A
DC-Kollektor/Basisverstärkung hfe Min:
140
Pd - Verlustleistung:
1.3 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
1000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.001812 oz
Tags
2SC3646S-T, 2SC3646S, 2SC3646, 2SC364, 2SC36, 2SC3, 2SC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Bipolar Transistor, 100V, 1A, Low VCE(sat), (PNP)NPN Single PCP hFE = 140 - 280
***(Formerly Allied Electronics)
ON Semi 2SC3646S-TD-E NPN Bipolar Transistor; 1 A; 100 V; 3-Pin PCP
***r Electronics
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
***Yang
Trans GP BJT NPN 100V 1A 4-Pin(3+Tab) PCP T/R - Tape and Reel
***enic
100V 500mW 1A 120MHz 200mV@400mA40mA NPN +150¡Í@(Tj) PCP(SOT-89) Bipolar Transistors - BJT ROHS
***ure Electronics
Bipolar Transistors - BJT BIP NPN 1A 100V
***nell
TRANSISTOR, NPN, 100V, 1A, SOT89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Typ Gain Bandwidth ft:120MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:280; Transistor Case Style:SOT-89; No. of Pins:3
***C
Trans GP BJT NPN 100V 1A 3-Pin SOT-23 T/R Trans GP BJT NPN 100V 1A 3-Pin SOT-23 T/R
***ure Electronics
FMMT493 Series NPN 1 A 100 V SMT Silicon Medium Power Transistor - SOT-23
***S.I.T. Europe - USA - Asia
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
***nell
TRANSISTOR, NPN, REEL 3K; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 500mW; DC Collector Current: 1A; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Continuous Collector Current Ic Max: 1A; Current Ic Continuous a Max: 1A; Current Ic hFE: 250mA; Device Marking: MT493; Gain Bandwidth ft Min: 150MHz; Gain Bandwidth ft Typ: 150MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 500mW; Reel Quantity: 3000; SMD Marking: 493; Tape Width: 8mm; Termination Type: Surface Mount Device; Voltage Vcbo: 120V
***emi
Bipolar Transistor, 100V, 1A, Low VCE(sat), (PNP)NPN Single NMP
***(Formerly Allied Electronics)
ON Semi 2SC4488S-AN NPN Bipolar Transistor; 1 A; 100 V; 3-Pin NMP
***el Electronic
Bipolar Transistors - BJT BIP NPN 1A 100V
***et
Trans GP BJT NPN 100V 1A 3-Pin NMP T/R
***emi
Bipolar Transistor, 100V, 1A, Low VCE(sat), (PNP)NPN Single PCP hFE = 200 - 400
***(Formerly Allied Electronics)
ON Semi 2SC3646T-TD-E NPN Bipolar Transistor; 1 A; 100 V; 3-Pin PCP
***r Electronics
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
***Yang
Trans GP BJT NPN 100V 1A 3-Pin SC-62 T/R - Tape and Reel
***nell
TRANSISTOR, NPN, 100V, 1A, SOT89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Typ Gain Bandwidth ft:120MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:400; Transistor Case Style:SOT-89; No. of Pins:3
***emi
Bipolar Transistor, 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA
***r Electronics
Small Signal Bipolar Transistor, 1A I(C), 1-Element, NPN
***et
Trans GP BJT NPN 100V 1A 3-Pin(3+Tab) TP Bag
***roFlash
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
*** Source Electronics
Trans GP BJT PNP 80V 1A 2000mW 4-Pin(3+Tab) SOT-89 T/R / TRANS PNP 80V 1A SOT-89
***ure Electronics
BCX5316 Series 1 A 80 V SMT PNP Silicon Planar Medium Power Transistor - SOT-89
***el Electronic
Bipolar Transistors - BJT PNP Medium Power
***ment14 APAC
TRANSISTOR, PNP, 80V, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:150mA; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:100; Package / Case:SOT-89; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Pulsed Current Icm:1.5A; Termination Type:SMD; Voltage Vcbo:100V
***C
Trans GP BJT NPN 100V 1A 4-Pin(3+Tab) SOT-89 T/R Trans GP BJT NPN 100V 1A 4-Pin(3+Tab) SOT-89 T/R
***ure Electronics
FCX493 Series NPN 1 A 100 V SMT Silicon Medium Power Transistor - SOT-89-3
***nell
TRANSISTOR, NPN, 100V, 1A, SOT89; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 1W; DC Collector Current: 1A; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C
Teil # Mfg. Beschreibung Aktie Preis
2SC3646S-TD-E
DISTI # V72:2272_07277498		ON SemiconductorTrans GP BJT NPN 100V 1A 4-Pin(3+Tab) SOT-89 T/R
RoHS: Compliant		557
  • 75000:$0.1363
  • 30000:$0.1394
  • 15000:$0.1424
  • 6000:$0.1455
  • 3000:$0.1486
  • 1000:$0.1517
  • 500:$0.1622
  • 250:$0.1802
  • 100:$0.2002
  • 50:$0.2949
  • 25:$0.3604
  • 10:$0.3605
  • 1:$0.4237
2SC3646S-TD-E
DISTI # 2SC3646S-TD-EOSCT-ND		ON SemiconductorTRANS NPN 100V 1A SOT89-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2160In Stock
  • 500:$0.2184
  • 100:$0.2780
  • 10:$0.3720
  • 1:$0.4300
2SC3646S-TD-E
DISTI # 2SC3646S-TD-EOSDKR-ND		ON SemiconductorTRANS NPN 100V 1A SOT89-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2160In Stock
  • 500:$0.2184
  • 100:$0.2780
  • 10:$0.3720
  • 1:$0.4300
2SC3646S-TD-E
DISTI # 2SC3646S-TD-EOSTR-ND		ON SemiconductorTRANS NPN 100V 1A SOT89-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		2000In Stock
  • 25000:$0.1285
  • 10000:$0.1301
  • 5000:$0.1398
  • 2000:$0.1494
  • 1000:$0.1639
2SC3646S-TD-E
DISTI # 25771081		ON SemiconductorTrans GP BJT NPN 100V 1A 4-Pin(3+Tab) SOT-89 T/R
RoHS: Compliant		557
  • 30000:$0.1468
  • 15000:$0.1509
  • 6000:$0.1550
  • 3000:$0.1591
  • 1000:$0.1631
  • 500:$0.1744
  • 250:$0.1937
  • 100:$0.2152
  • 50:$0.3166
  • 45:$0.3518
2SC3646S-TD-E
DISTI # 2SC3646S-TD-E		ON SemiconductorTrans GP BJT NPN 100V 1A 4-Pin(3+Tab) PCP T/R (Alt: 2SC3646S-TD-E)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 3000
  • 10000:€0.1009
  • 6000:€0.1079
  • 4000:€0.1279
  • 2000:€0.1569
  • 1000:€0.2019
2SC3646S-TD-E
DISTI # 2SC3646S-TD-E		ON SemiconductorTrans GP BJT NPN 100V 1A 4-Pin(3+Tab) PCP T/R - Bulk (Alt: 2SC3646S-TD-E)
Min Qty: 2084
Container: Bulk		Americas - 0
  • 20840:$0.1479
  • 10420:$0.1509
  • 6252:$0.1529
  • 4168:$0.1549
  • 2084:$0.1559
2SC3646S-TD-E
DISTI # 2SC3646S-TD-E		ON SemiconductorTrans GP BJT NPN 100V 1A 4-Pin(3+Tab) PCP T/R - Tape and Reel (Alt: 2SC3646S-TD-E)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 40000:$0.1369
  • 20000:$0.1409
  • 12000:$0.1429
  • 8000:$0.1449
  • 4000:$0.1459
2SC3646S-TD-E
DISTI # 65T2474		ON SemiconductorBIP NPN 1A 100V / REEL0
  • 9000:$0.1470
  • 3000:$0.1570
  • 1000:$0.1820
  • 500:$0.2190
  • 250:$0.2250
  • 100:$0.2320
  • 25:$0.3620
  • 1:$0.4900
2SC3646S-TD-E
DISTI # 99AC6851		ON SemiconductorTRANSISTOR, NPN, 100V, 1A, SOT-89,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:100V,Transition Frequency ft:120MHz,Power Dissipation Pd:1.3W,DC Collector Current:1A,DC Current Gain hFE:140hFE,Transistor Case RoHS Compliant: Yes2025
  • 100:$0.2030
  • 50:$0.2470
  • 25:$0.2910
  • 10:$0.3340
  • 1:$0.3940
2SC3646S-TD-E
DISTI # 70341645		ON SemiconductorON Semi 2SC3646S-TD-E NPN Bipolar Transistor,1 A,100 V,3-Pin PCP
RoHS: Compliant		0
  • 100:$0.1560
  • 250:$0.1530
  • 500:$0.1500
  • 1000:$0.1470
2SC3646S-TD-E
DISTI # 863-2SC3646S-TD-E		ON SemiconductorBipolar Transistors - BJT BIP NPN 1A 100V
RoHS: Compliant		3832
  • 1:$0.3900
  • 10:$0.3310
  • 100:$0.2010
  • 1000:$0.1560
  • 2000:$0.1330
  • 10000:$0.1320
2SC3646S-P-TD-E
DISTI # 863-2SC3646S-P-TD-E		ON SemiconductorBipolar Transistors - BJT BIP NPN 1A 100V
RoHS: Compliant		0
  • 1:$0.6600
  • 10:$0.5540
  • 100:$0.3570
  • 1000:$0.2860
  • 2000:$0.2410
  • 10000:$0.2330
  • 25000:$0.2240
2SC3646S-TD-EON SemiconductorSmall Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
RoHS: Compliant		3503
  • 1000:$0.1600
  • 100:$0.1700
  • 500:$0.1700
  • 25:$0.1800
  • 1:$0.1900
2SC3646S-TD-E
DISTI # 7740691P		ON SemiconductorTRANSISTOR NPN 100V 1A HFE140-280 SOT89, RL50
  • 100:£0.1580
2SC3646S-TD-EON Semiconductor 346
    2SC3646S-TD-E
    DISTI # 2724339    		ON SemiconductorTRANSISTOR, NPN, 100V, 1A, SOT-89
    RoHS: Compliant    		2025
    • 500:$0.3320
    • 100:$0.4220
    • 10:$0.5640
    • 1:$0.6530
    2SC3646S-TD-E
    DISTI # 2724339    		ON SemiconductorTRANSISTOR, NPN, 100V, 1A, SOT-892040
    • 500:£0.1190
    • 250:£0.1370
    • 100:£0.1540
    • 25:£0.2710
    • 5:£0.3170
    2SC3646S-TD-EON Semiconductor100V,1A,NPN Single Bipolar Transistor104
    • 1:$0.2500
    • 100:$0.1900
    • 500:$0.1800
    • 1000:$0.1700
    Bild Teil # Beschreibung
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    Mfr.#: 2SA1416S-TD-E

    OMO.#: OMO-2SA1416S-TD-E

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    GRM219R60J476ME44D

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    		 CRYSTAL 27.0000MHZ 6PF SMD
    2SA1416S-TD-E

    Mfr.#: 2SA1416S-TD-E

    OMO.#: OMO-2SA1416S-TD-E-ON-SEMICONDUCTOR

    		 Bipolar Transistors - BJT BIP PNP 1A 100V
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1986
    Menge eingeben:
    Der aktuelle Preis von 2SC3646S-TD-E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,39 $
    0,39 $
    10
    0,33 $
    3,31 $
    100
    0,20 $
    20,10 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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