IRFS4020TRLPBF

IRFS4020TRLPBF
Mfr. #:
IRFS4020TRLPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET Aud MOSFT 200V 18A 105mOhm 18nC Qg
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFS4020TRLPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS4020TRLPBF DatasheetIRFS4020TRLPBF Datasheet (P4-P6)IRFS4020TRLPBF Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
IRFS4020TRLPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
18 A
Rds On - Drain-Source-Widerstand:
85 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4.9 V
Qg - Gate-Ladung:
29 nC
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
100 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
24 S
Abfallzeit:
6.3 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001573468
Gewichtseinheit:
0.139332 oz
Tags
IRFS40, IRFS4, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 200 V 105 mOhm 29 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
200V Single N-Channel Digital Audio HEXFET Power MOSFET Switch in a D2Pak package, D2PAK-3, RoHS
***nell
MOSFET, N-CH, 200V, 18A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.9V; Power Dissipation Pd: 100W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 18 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 105 / Gate-Source Voltage V = 20 / Fall Time ns = 6.3 / Rise Time ns = 12 / Turn-OFF Delay Time ns = 16 / Turn-ON Delay Time ns = 7.8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 100
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRFS4020TRLPBF
DISTI # V72:2272_13891431
Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R800
  • 500:$0.9045
  • 250:$1.0125
  • 100:$1.0237
  • 25:$1.1975
  • 10:$1.2414
  • 1:$1.4120
IRFS4020TRLPBF
DISTI # IRFS4020TRLPBFCT-ND
Infineon Technologies AGMOSFET N-CH 200V 18A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
512In Stock
  • 100:$1.5550
  • 10:$1.9350
  • 1:$2.1400
IRFS4020TRLPBF
DISTI # IRFS4020TRLPBFDKR-ND
Infineon Technologies AGMOSFET N-CH 200V 18A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
512In Stock
  • 100:$1.5550
  • 10:$1.9350
  • 1:$2.1400
IRFS4020TRLPBF
DISTI # IRFS4020TRLPBFTR-ND
Infineon Technologies AGMOSFET N-CH 200V 18A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 800:$1.0602
IRFS4020TRLPBF
DISTI # 31280383
Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R800
  • 11:$0.7939
IRFS4020TRLPBF
DISTI # IRFS4020TRLPBF
Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS4020TRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 800:$0.7029
  • 1600:$0.6769
  • 3200:$0.6529
  • 4800:$0.6309
  • 8000:$0.6199
IRFS4020TRLPBF
DISTI # IRFS4020TRLPBF
Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R (Alt: IRFS4020TRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Asia - 0
  • 800:$0.8142
  • 1600:$0.7807
  • 2400:$0.7702
  • 4000:$0.7402
  • 8000:$0.7307
  • 20000:$0.7124
  • 40000:$0.6950
IRFS4020TRLPBF
DISTI # SP001573468
Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001573468)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Europe - 0
  • 800:€0.9949
  • 1600:€0.8139
  • 3200:€0.7459
  • 4800:€0.6889
  • 8000:€0.6399
IRFS4020TRLPBF
DISTI # 49AC0317
Infineon Technologies AGMOSFET, N-CH, 200V, 18A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.9V,Power RoHS Compliant: Yes0
  • 1:$1.8000
  • 10:$1.5300
  • 25:$1.4300
  • 50:$1.3200
  • 100:$1.2200
  • 250:$1.1500
  • 500:$1.0700
IRFS4020TRLPBF
DISTI # 70019216
Infineon Technologies AGAUDIO MOSFET,200V,18A,105 MOHM,18 NC QG,D2-PAK
RoHS: Compliant
0
  • 5:$2.0400
IRFS4020TRLPBF
DISTI # 942-IRFS4020TRLPBF
Infineon Technologies AGMOSFET Aud MOSFT 200V 18A 105mOhm 18nC Qg
RoHS: Compliant
164
  • 1:$1.8000
  • 10:$1.5300
  • 100:$1.2200
  • 500:$1.0700
  • 800:$0.8850
IRFS4020TRLPBF
DISTI # IRFS4020PBF-GURT
Infineon Technologies AGN-Ch 200V 18A 100W 0,105R DPak
RoHS: Compliant
800
  • 10:€1.0300
  • 50:€0.7330
  • 200:€0.6330
  • 500:€0.6095
IRFS4020TRLPBF
DISTI # 2839495
Infineon Technologies AGMOSFET, N-CH, 200V, 18A, TO-263
RoHS: Compliant
0
  • 5:£1.2700
  • 25:£1.1100
  • 100:£0.8820
  • 250:£0.7760
  • 500:£0.6690
IRFS4020TRLPBF
DISTI # 2839495
Infineon Technologies AGMOSFET, N-CH, 200V, 18A, TO-263
RoHS: Compliant
0
  • 5:$3.3000
  • 25:$2.8800
  • 100:$2.3500
  • 250:$1.9800
  • 500:$1.7200
  • 1000:$1.6200
  • 5000:$1.5400
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AT25SF081-MAHF-T

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FFD10UP20S

Mfr.#: FFD10UP20S

OMO.#: OMO-FFD10UP20S

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Mfr.#: FDS4685

OMO.#: OMO-FDS4685

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Mfr.#: CSD25484F4

OMO.#: OMO-CSD25484F4

MOSFET -20V, P ch NexFET MOSFETG , single LGA 0.6x1.0, 109mOhm 3-PICOSTAR -55 to 150
TPS562208DDCR

Mfr.#: TPS562208DDCR

OMO.#: OMO-TPS562208DDCR

Switching Voltage Regulators AugustaNext 2A
SN74LVC1G123DCUR

Mfr.#: SN74LVC1G123DCUR

OMO.#: OMO-SN74LVC1G123DCUR-TEXAS-INSTRUMENTS

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FFD10UP20S

Mfr.#: FFD10UP20S

OMO.#: OMO-FFD10UP20S-ON-SEMICONDUCTOR

Rectifiers 200V 10A Ultrafast
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von IRFS4020TRLPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,79 $
1,79 $
10
1,52 $
15,20 $
100
1,22 $
122,00 $
500
1,06 $
530,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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