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NGTB35N65FL2WG

NGTB35N65FL2WG
Mfr. #:
NGTB35N65FL2WG
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 650V/35A FAST IGBT FSII T
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NGTB35N65FL2WG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB35N65FL2WG DatasheetNGTB35N65FL2WG Datasheet (P4-P6)NGTB35N65FL2WG Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
NGTB35N65FL2WG Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
2.2 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
70 A
Pd - Verlustleistung:
300 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
70 A
Marke:
ON Semiconductor
Gate-Emitter-Leckstrom:
200 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Gewichtseinheit:
1.340411 oz
Tags
NGTB35, NGTB3, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 70A 300000mW 3-Pin(3+Tab) TO-247 Tube
***ied Electronics & Automation
NGTB35N65FL2WG; IGBT Transistor; 70 A 650 V; 1MHz; 3-Pin TO-247
***ure Electronics
NGTB35N65: 650 V 70 A 300 W Through Hole Field Stop II IGBT - TO-247-3
***nell
650V/35A FAST IGBT FSII T; DC Collector Current: 70A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Field Stop II Series IGBTs
ON Semiconductor's Field Stop II Series IGBTs feature a robust and cost effective Field Stop II Trench construction, and provides superior performance, offering both low on state voltage and minimal switching loss. Features include extremely efficient trench, short circuit capable, available in rates of 15A to 75A, reduction in switching losses, and reduction in input capacitance. These IGBTs are well suited for UPS, solar, half bridge resonant, or demanding switching applications. Incorporated into each device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More
Teil # Mfg. Beschreibung Aktie Preis
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WGOS-ND		ON SemiconductorIGBT 650V 70A 300W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		107In Stock
  • 1020:$1.6464
  • 510:$1.9522
  • 120:$2.2932
  • 30:$2.6460
  • 1:$3.1200
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WG		ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Bulk (Alt: NGTB35N65FL2WG)
Min Qty: 202
Container: Bulk		Americas - 0
  • 202:$1.5900
  • 204:$1.5900
  • 406:$1.4900
  • 1010:$1.4900
  • 2020:$1.4900
NGTB35N65FL2WG
DISTI # NGTB35N65FL2WG		ON SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB35N65FL2WG)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 0
  • 1:$1.3900
  • 10:$1.3900
  • 25:$1.3900
  • 50:$1.3900
  • 100:$1.3900
  • 500:$1.3900
  • 1000:$1.2900
NGTB35N65FL2WG.
DISTI # 61AC1092		ON SemiconductorDC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:300W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes21
  • 1000:$1.2900
  • 1:$1.3900
NGTB35N65FL2WG
DISTI # 70547360		ON SemiconductorNGTB35N65FL2WG,IGBT Transistor,70 A 650 V,1MHz,3-Pin TO-247
RoHS: Compliant		0
  • 2:$2.9600
  • 20:$2.8200
  • 50:$2.6800
  • 100:$2.5500
  • 200:$2.4200
NGTB35N65FL2WG
DISTI # 863-NGTB35N65FL2WG		ON SemiconductorIGBT Transistors 650V/35A FAST IGBT FSII T
RoHS: Compliant		901
  • 1:$2.9700
  • 10:$2.5200
  • 100:$2.1900
  • 250:$2.0800
  • 500:$1.8600
  • 1000:$1.5700
  • 2500:$1.4900
  • 5000:$1.4400
NGTB35N65FL2WGON SemiconductorInsulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel
RoHS: Compliant		210
  • 1000:$1.6300
  • 500:$1.7200
  • 100:$1.7900
  • 25:$1.8700
  • 1:$2.0100
NGTB35N65FL2WG
DISTI # 8427898P		ON SemiconductorIGBT FIELD STOP II 650V 35A DIODE TO247, TU284
  • 40:£1.7950
  • 20:£1.8900
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    Verfügbarkeit
    Aktie:
    862
    Auf Bestellung:
    2845
    Menge eingeben:
    Der aktuelle Preis von NGTB35N65FL2WG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,46 $
    3,46 $
    10
    2,94 $
    29,40 $
    100
    2,56 $
    256,00 $
    250
    2,43 $
    607,50 $
    500
    2,17 $
    1 085,00 $
    1000
    1,83 $
    1 830,00 $
    2500
    1,74 $
    4 350,00 $
    5000
    1,69 $
    8 450,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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