FGH25N120FTDS

FGH25N120FTDS
Mfr. #:
FGH25N120FTDS
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 1200V 25A Field Stop Trench IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGH25N120FTDS Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FGH25N120FTDS Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
IC-Chips
Serie
-
Verpackung
Rohr
Gewichtseinheit
0.225401 oz
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247
Leistung max
313W
Reverse-Recovery-Time-trr
535ns
Strom-Kollektor-Ic-Max
50A
Spannungs-Kollektor-Emitter-Breakdown-Max
1200V
IGBT-Typ
Grabenfeldstopp
Strom-Kollektor-gepulster-Icm
75A
Vce-on-Max-Vge-Ic
2V @ 15V, 25A
Schaltenergie
1.42mJ (on), 1.16mJ (off)
Gate-Gebühr
169nC
Td-ein-aus-25°C
26ns/151ns
Testbedingung
600V, 25A, 10 Ohm, 15V
Tags
FGH25N, FGH25, FGH2, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
Teil # Mfg. Beschreibung Aktie Preis
FGH25N120FTDS
DISTI # FGH25N120FTDS-ND
ON SemiconductorIGBT 1200V 50A 313W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
2In Stock
  • 1:$7.8700
FGH25N120FTDS
DISTI # FGH25N120FTDS
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-3P(N) Tube - Rail/Tube (Alt: FGH25N120FTDS)
RoHS: Compliant
Min Qty: 1
Container: Tube
Americas - 17976
  • 1:$3.4900
  • 10:$3.4900
  • 25:$3.4900
  • 50:$3.4900
  • 100:$3.3900
  • 500:$3.3900
  • 1000:$3.2900
FGH25N120FTDS
DISTI # 64R3073
ON SemiconductorFS1TIGBT TO247 25A 1200V / TUBE0
  • 1:$8.0700
  • 10:$6.6600
  • 100:$5.5500
  • 500:$5.0800
  • 1000:$4.4500
  • 2500:$4.3000
FGH25N120FTDS
DISTI # 512-FGH25N120FTDS
ON SemiconductorIGBT Transistors 1200V 25A Field Stop Trench IGBT
RoHS: Compliant
328
  • 1:$7.4900
  • 10:$6.7700
  • 25:$6.4600
  • 100:$5.6100
  • 250:$5.3600
Bild Teil # Beschreibung
FGH25N120FTDS

Mfr.#: FGH25N120FTDS

OMO.#: OMO-FGH25N120FTDS

IGBT Transistors 1200V 25A Field Stop Trench IGBT
FGH25N120FTDS

Mfr.#: FGH25N120FTDS

OMO.#: OMO-FGH25N120FTDS-ON-SEMICONDUCTOR

IGBT Transistors 1200V 25A Field Stop Trench IGBT
FGH25N120FTD3

Mfr.#: FGH25N120FTD3

OMO.#: OMO-FGH25N120FTD3-1190

Neu und Original
FGH25N120FTDH

Mfr.#: FGH25N120FTDH

OMO.#: OMO-FGH25N120FTDH-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von FGH25N120FTDS dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,94 $
4,94 $
10
4,69 $
46,88 $
100
4,44 $
444,15 $
500
4,19 $
2 097,40 $
1000
3,95 $
3 948,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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