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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BCP5510E6327 | Infineon Technologies AG | Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin RoHS: Not Compliant | Americas - 1000 | |
| BCP55-10-E6327 | 1212 | |||
| BCP55-10E6327 | Infineon Technologies AG | INSTOCK | 4345 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: BCP5510TA OMO.#: OMO-BCP5510TA |
Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K |
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Mfr.#: BCP5516TA OMO.#: OMO-BCP5516TA |
Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K |
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Mfr.#: BCP55115 |
Neu und Original |
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Mfr.#: BCP5516 OMO.#: OMO-BCP5516-1190 |
Neu und Original |
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Mfr.#: BCP5516E6327HTSA1 |
Neu und Original |
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Mfr.#: BCP5516TA-79 OMO.#: OMO-BCP5516TA-79-1190 |
Neu und Original |
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Mfr.#: BCP5510E6327 OMO.#: OMO-BCP5510E6327-1190 |
NPN SILICON AF TRANSISTOR |
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Mfr.#: BCP5516H6327XTSA1 |
TRANS NPN 60V 1A SOT223 |
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Mfr.#: BCP5516TA OMO.#: OMO-BCP5516TA-DIODES |
Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K |
|
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Mfr.#: BCP5510TA OMO.#: OMO-BCP5510TA-DIODES |
Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K |