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IRF2204LPBF

IRF2204LPBF
Mfr. #:
IRF2204LPBF
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors MOSFET MOSFT 40V 170A 3.6mOhm 130nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF2204LPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF2204LPBF DatasheetIRF2204LPBF Datasheet (P4-P6)IRF2204LPBF Datasheet (P7-P9)IRF2204LPBF Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Tags
IRF2204, IRF220, IRF22, IRF2, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***et Europe
Trans MOSFET N-CH 40V 170A 3-Pin(3+Tab) TO-262
***(Formerly Allied Electronics)
MOSFET, 40V, 170A, 3.6 MOHM, 130 NC QG, D2-PAK
*** Electronic Components
IGBT Transistors MOSFET MOSFT 40V 170A 3.6mOhm 130nC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:170A; On Resistance, Rds(on):3.6mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***ark
MOSFET, 40V, 195A, Q101, TO-262; Transistor Polarity:N Channel; Continuous Drain
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 40V 250A Automotive 3-Pin(3+Tab) TO-262 Tube
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive; Electric Power Steering; Relay Replacement
***nell
MOSFET, 40V, 195A, Q101, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:230W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***hard Electronics
STMICROELECTRONICS STI270N4F3 MOSFET Transistor, N Channel, 80 A, 40 V, 2.1 mohm, 10 V, 4 V
***icroelectronics
N-channel 40 V, 2.1 mOhm typ., 160 A STripFET F3 PowerMOSFET in I2PAK package
***r Electronics
Power Field-Effect Transistor, 120A I(D), 40V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ment14 APAC
MOSFET, N CH, 40V, 120A, I2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:120A; Package / Case:I2-PAK; Power Dissipation Pd:330W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
***ical
Trans MOSFET N-CH Si 40V 123A Automotive 3-Pin(3+Tab) TO-262 Tube
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive; Electric Power Steering; Relay Replacement
***nell
MOSFET, 40V, 120A, Q101, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:123A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:99W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
***ical
Trans MOSFET N-CH 40V 193A Automotive 3-Pin(3+Tab) TO-262 Tube
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive; Electric Power Steering; Relay Replacement
***nell
MOSFET, 40V, 120A, Q101, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:163W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***(Formerly Allied Electronics)
MOSFET; 30V; 150A; 3.8 MOHM; 32 NC QG; LOGIC LEVEL; TO-262
***et Europe
Trans MOSFET N-CH 30V 150A 3-Pin(3+Tab) TO-262
***S
French Electronic Distributor since 1988
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:150A; On Resistance, Rds(on):3.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, 40V, 160A, 4 MOHM, 93.3 NC QG, LOGIC LEVEL, TO-262
***ernational Rectifier
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***et
Trans MOSFET N-CH 40V 160A 3-Pin(3+Tab) TO-262
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:160A; On Resistance, Rds(on):4mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
IRF2204LPBF
DISTI # IRF2204LPBF-ND		Infineon Technologies AGMOSFET N-CH 40V 170A TO-262
RoHS: Compliant
Min Qty: 200
Container: Tube		Limited Supply - Call
    IRF2204LPBF
    DISTI # 70018174    		Infineon Technologies AGMOSFET,40V,170A,3.6 MOHM,130 NC QG,D2-PAK
    RoHS: Compliant    		0
    • 1:$1.7000
    IRF2204LPBF
    DISTI # 942-IRF2204LPBF    		Infineon Technologies AGMOSFET MOSFT 40V 170A 3.6mOhm 130nC
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
      IRF2204SPBF

      Mfr.#: IRF2204SPBF

      OMO.#: OMO-IRF2204SPBF

      		 MOSFET MOSFT 40V 170A 3.6mOhm 130nC
      IRF2203S

      Mfr.#: IRF2203S

      OMO.#: OMO-IRF2203S-1190

      		 Neu und Original
      IRF2204L

      Mfr.#: IRF2204L

      OMO.#: OMO-IRF2204L-1190

      		 Neu und Original
      IRF2204S

      Mfr.#: IRF2204S

      OMO.#: OMO-IRF2204S-1190

      		 Neu und Original
      IRF220H

      Mfr.#: IRF220H

      OMO.#: OMO-IRF220H-1190

      		 Neu und Original
      IRF223

      Mfr.#: IRF223

      OMO.#: OMO-IRF223-1190

      		 Power Field-Effect Transistor, 4A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
      IRF224

      Mfr.#: IRF224

      OMO.#: OMO-IRF224-1190

      		 Electronic Component
      IRF224N

      Mfr.#: IRF224N

      OMO.#: OMO-IRF224N-1190

      		 Electronic Component
      IRF225

      Mfr.#: IRF225

      OMO.#: OMO-IRF225-1190

      		 Neu und Original
      IRF2204LPBF

      Mfr.#: IRF2204LPBF

      OMO.#: OMO-IRF2204LPBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors MOSFET MOSFT 40V 170A 3.6mOhm 130nC
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von IRF2204LPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,55 $
      2,55 $
      10
      2,42 $
      24,22 $
      100
      2,30 $
      229,50 $
      500
      2,17 $
      1 083,75 $
      1000
      2,04 $
      2 040,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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