BLF242

Mfr. #:: BLF242
Hersteller:: NXP Semiconductors
Beschreibung:: MOSFET, RF, SOT-123
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BLF242 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: BLF242 Mehr Informationen BLF242 Product Details

Produkteigenschaft
Attributwert

Tags: BLF242, BLF24, BLF2, BLF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BLF242 Beschreibung

***ical: Trans MOSFET N-CH 65V 1A 4-Pin SOT-123A

***ark: MOSFET, RF, SOT-123; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:28V; Current, Id Cont:1A; Resistance, Rds On:3.3ohm; Voltage, Vgs Rds on Measurement:1V; Voltage, Vgs th Typ:4.5V; Case Style:SOT-123; Termination ;RoHS Compliant: Yes

***nell: MOSFET, RF, SOT-123; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: 1A; Power Dissipation Pd: 5W; Operating Frequency Min: 25MHz; Operating Frequency Max: 200MHz; RF Transistor Case: SOT-123A; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Application Code: RFPOWMOS; Base Number: 1; Capacitance Ciss Typ: 13pF; Current Id Max: 1A; Current Idss Max: 10µA; Efficiency: 50%; Gain Bandwidth ft Typ: 175MHz; Load Power: 16W; No. of Transistors: 1; Noise Figure Typ: 5.5dB; On Resistance Rds(on): 3.3ohm; On State Resistance Max: 5ohm; Operating Frequency Range: 25MHz to 200MHz; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Max: 16W; Power Gain Gp Min: 13dB; Pulse Current Idm: 1A; Termination Type: Screw; Threshold Voltage Vgs: 4.5V; Transistor Case Style: SOT-123; Transistor Polarity: N Channel; Transistor Type: RF MOSFET; Voltage Vds Typ: 28V; Voltage Vgs Rds on Measurement: 1V; Voltage Vgs th Max: 4.5V

***ark: Rf Fet Transistor, 65 V, 1 A, 20 W, 925 Mhz, 960 Mhz, Soic Rohs Compliant: Yes

***icroelectronics: 6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package

***p One Stop: Trans RF MOSFET N-CH 65V 1A 3-Pin(2+Tab) PowerSO-10RF (Formed lead) Tube

***r Electronics: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***nell: MOSFET, RF, 6W, 945MHZ; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: 1A; Power Dissipation Pd: 20W; Operating Frequency Min: 925MHz; Operating Frequency Max: 960MHz; RF Transistor Case: SOIC; No. of Pins: 3Pins; Operating Temperature Max: 165°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (17-Dec-2015); Current Id Max: 1A; Full Power Rating Temperature: 70°C; Termination Type: Surface Mount Device; Threshold Voltage Vgs: 5V; Transistor Case Style: PowerPAK SO; Transistor Polarity: N Channel; Transistor Type: RF MOSFET; Voltage Vds Typ: 28V; Voltage Vgs Max: 20V

***icroelectronics: 6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package

*** Electronic Components: RF MOSFET Transistors RF Power Transistor N Chnl

***et Europe: Transistor RF FET N-CH 65V 1A 945MHz 3-Pin PowerSO-10RF T/R

***r Electronics: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***i-Key: TRANS RF N-CH FET POWERSO-10RF

***icroelectronics: 6W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package

***ure Electronics: N-Channel 1 GHz 6 W 65 V RF Rower Transistor - POWERSO-10RF (Straight Leads)

***et Europe: Trans MOSFET N-CH 65V 1A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) Tube

***r Electronics: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***itex: Transistor: N-MOSFET; unipolar; 60V; 12A; 0.1ohm; 30W; -55+175 deg.C; SMD; TO252(DPAK)

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.25 W

***(Formerly Allied Electronics): MOSFET, 60V, 1.2A, 480 MOHM, 0.7 NC QG,SOT-23

***et: Trans MOSFET N-CH 60V 1.2A 3-Pin SOT-23 T/R

***ineon: Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: DC Switches; Load Switch; Load Switch High Side

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):480mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes

***ure Electronics: ZXMN6A07F Series 60 V 0.25 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3

***ical: Trans MOSFET N-CH 60V 1.2A Automotive 3-Pin SOT-23 T/R

***ark: N CHANNEL MOSFET, 60V, 1A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***nell: MOSFET, N, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 806mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 1A; Current Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; On State Resistance Max: 400mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 625mW; Pulse Current Idm: 4A; SMD Marking: 7N6; Voltage Vds Typ: 60V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Min: 1V

***ure Electronics: N-Channel 60 V 0.33 Ohm Enhancement Mode Vertical DMOS FET-TO-92

***ponent Sense: Trans MOSFET N-CH 60V 1.1A Automotive 3-Pin E-Line

***ark: Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes

***(Formerly Allied Electronics): MOSFET N-Channel 60V 1.1A E-Line

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

***ment14 APAC: MOSFET, N, LOGIC, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:850mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.1A; Current Temperature:25°C; Device Marking:ZVN4306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:850mW; Power Dissipation Pd:850mW; Power Dissipation Ptot Max:850mW; Pulse Current Idm:20A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BLF2425M9L30U DISTI # 1603-1067-ND	Ampleon	RF FET LDMOS 65V 18.5DB SOT1135A RoHS: Compliant Min Qty: 1 Container: Tray	124In Stock	100:$38.5802 20:$44.4335 1:$47.6300
BLF2425M8L140U DISTI # 1603-1012-ND	Ampleon	RF FET LDMOS 65V 19DB SOT502A RoHS: Compliant Min Qty: 1 Container: Tray	87In Stock	100:$51.6663 20:$57.6135 1:$61.3300
BLF2425M8LS140U DISTI # 1603-1013-ND	Ampleon	RF FET LDMOS 65V 19DB SOT502B RoHS: Compliant Min Qty: 1 Container: Tray	86In Stock	20:$126.5830 1:$132.8700
BLF2425M9LS30U DISTI # 1603-1069-ND	Ampleon	RF FET LDMOS 65V 18.5DB SOT1135B RoHS: Compliant Min Qty: 1 Container: Tray	73In Stock	100:$38.5802 20:$44.4335 1:$47.6300
BLF2425M7LS250P,11 DISTI # 568-11649-5-ND	Ampleon	RF FET LDMOS 65V 15DB SOT539B RoHS: Compliant Min Qty: 1 Container: Tray	60In Stock	100:$91.6802 20:$101.3310 1:$106.8500
BLF2425M7L250P,112 DISTI # 1603-1066-ND	Ampleon	RF FET LDMOS 65V 15DB SOT539A RoHS: Compliant Min Qty: 1 Container: Tray	52In Stock	100:$91.6802 20:$101.3310 1:$106.8500
BLF2425M9LS140U DISTI # 1603-1068-ND	Ampleon	TRANS RF 140W LDMOST RoHS: Compliant Min Qty: 1 Container: Tray	46In Stock	100:$51.6663 40:$55.7550 20:$57.6135 1:$61.3300
BLF242,112 DISTI # 568-2396-ND	Ampleon	RF FET NCHA 65V 16DB SOT123A RoHS: Compliant Min Qty: 40 Container: Tray	Limited Supply - Call
BLF2425M6L180P,112 DISTI # BLF2425M6L180P,112-ND	Ampleon	RF FET LDMOS 65V 13.3DB SOT539A RoHS: Compliant Min Qty: 60 Container: Tray	Limited Supply - Call
BLF2425M9L30J DISTI # BLF2425M9L30J-ND	Ampleon	RF FET LDMOS 65V 18.5DB SOT1135A RoHS: Compliant Min Qty: 100 Container: Tape & Reel (TR)	Temporarily Out of Stock	100:$38.5802
BLF2425M9LS30J DISTI # BLF2425M9LS30J-ND	Ampleon	RF FET LDMOS 65V 18.5DB SOT1135B RoHS: Compliant Min Qty: 100 Container: Tape & Reel (TR)	Temporarily Out of Stock	100:$38.5802
BLF2425M8L140J DISTI # BLF2425M8L140J-ND	Ampleon	RF FET LDMOS 65V 19DB SOT502A RoHS: Compliant Min Qty: 100 Container: Tape & Reel (TR)	Temporarily Out of Stock	100:$51.6663
BLF2425M9LS140J DISTI # BLF2425M9LS140J-ND	Ampleon	TRANS RF 140W LDMOST RoHS: Compliant Min Qty: 100 Container: Tape & Reel (TR)	Temporarily Out of Stock	100:$51.6663
BLF2425M7L250P,118 DISTI # BLF2425M7L250P,118-ND	Ampleon	RF FET LDMOS 65V 15DB SOT539A RoHS: Compliant Min Qty: 100 Container: Tape & Reel (TR)	Temporarily Out of Stock	100:$91.6802
BLF2425M7LS250P:11 DISTI # BLF2425M7LS250P:11-ND	Ampleon	RF FET LDMOS 65V 15DB SOT539B RoHS: Compliant Min Qty: 100 Container: Tape & Reel (TR)	Temporarily Out of Stock	100:$91.6802
BLF242112 DISTI # BLF242112	Avnet, Inc.	- Bulk (Alt: BLF242112) RoHS: Not Compliant Min Qty: 8 Container: Bulk	Americas - 0	80:$41.7900 40:$42.8900 24:$43.9900 16:$45.0900 8:$45.6900
BLF2425M9L30 DISTI # BLF2425M9L30	Avnet, Inc.	PHSBLF2425M9L30 (Alt: BLF2425M9L30) RoHS: Compliant Min Qty: 1	Europe - 0
BLF2425M9L30J DISTI # BLF2425M9L30J	Ampleon	30 W LDMOS power transistor - Tape and Reel (Alt: BLF2425M9L30J) RoHS: Compliant Min Qty: 100 Container: Reel	Americas - 0
BLF2425M9L30U DISTI # BLF2425M9L30U	Ampleon	30 W LDMOS power transistor - Bulk (Alt: BLF2425M9L30U) RoHS: Compliant Min Qty: 60 Container: Bulk	Americas - 0	600:$30.4900 300:$31.1900 180:$31.9900 120:$32.8900 60:$33.2900
BLF2425M9LS30U DISTI # BLF2425M9LS30U	Ampleon	30 W LDMOS power transistor - Bulk (Alt: BLF2425M9LS30U) RoHS: Compliant Min Qty: 60 Container: Bulk	Americas - 0	600:$30.4900 300:$31.1900 180:$31.9900 120:$32.8900 60:$33.2900
BLF2425M8L140J DISTI # BLF2425M8L140J	Ampleon	Trans MOSFET N-CH 65V 3-Pin SOT-502A T/R - Tape and Reel (Alt: BLF2425M8L140J) RoHS: Compliant Min Qty: 100 Container: Reel	Americas - 0
BLF2425M9LS30J DISTI # BLF2425M9LS30J	Ampleon	30 W LDMOS power transistor - Tape and Reel (Alt: BLF2425M9LS30J) RoHS: Compliant Min Qty: 100 Container: Reel	Americas - 0
BLF2425M8L140U DISTI # BLF2425M8L140U	Ampleon	Trans MOSFET N-CH 65V 3-Pin SOT-502A Bulk - Rail/Tube (Alt: BLF2425M8L140U) RoHS: Compliant Min Qty: 60 Container: Tube	Americas - 0	600:$42.5900 300:$43.6900 180:$44.7900 120:$45.8900 60:$46.4900
BLF2425M9LS140J DISTI # BLF2425M9LS140J	Ampleon	140 W LDMOS power transistor - Tape and Reel (Alt: BLF2425M9LS140J) RoHS: Compliant Min Qty: 100 Container: Reel	Americas - 0
BLF2425M8LS140112 DISTI # BLF2425M8LS140112	Avnet, Inc.	- Bulk (Alt: BLF2425M8LS140112) Min Qty: 3 Container: Bulk	Americas - 0	30:$102.9900 15:$105.4900 9:$108.1900 6:$110.9900 3:$112.4900
BLF2425M7L250P118 DISTI # BLF2425M7L250P,118	Ampleon	RF Components - Tape and Reel (Alt: BLF2425M7L250P,118) RoHS: Compliant Min Qty: 100 Container: Reel	Americas - 0
BLF2425M7L250P,112 DISTI # BLF2425M7L250P,112	Ampleon	Trans MOSFET N-CH 65V 5-Pin SOT-539A Blister T/R - Rail/Tube (Alt: BLF2425M7L250P,112) RoHS: Compliant Min Qty: 60 Container: Tube	Americas - 0	600:$78.9900 300:$80.9900 180:$83.0900 120:$85.1900 60:$86.2900
BLF2425M7LS250P,11 DISTI # BLF2425M7LS250P,11	Ampleon	Trans MOSFET N-CH 65V 5-Pin SOT-539B Bulk - Rail/Tube (Alt: BLF2425M7LS250P,11) RoHS: Compliant Min Qty: 60 Container: Tube	Americas - 0	600:$78.9900 300:$80.9900 180:$83.0900 120:$85.1900 60:$86.2900
BLF2425M7LS250P:11 DISTI # BLF2425M7LS250P:11	Ampleon	Trans MOSFET N-CH 65V 5-Pin SOT-539B T/R - Tape and Reel (Alt: BLF2425M7LS250P:11) RoHS: Compliant Min Qty: 100 Container: Reel	Americas - 0
BLF2425M7LS140,112 DISTI # BLF2425M7LS140112	Ampleon	Trans MOSFET N-CH 65V 3-Pin SOT-502B Blister - Bulk (Alt: BLF2425M7LS140112) RoHS: Not Compliant Min Qty: 3 Container: Bulk	Americas - 0	30:$102.9900 15:$105.4900 9:$108.1900 6:$110.9900 3:$112.4900
BLF242,112 DISTI # 70R2760	NXP Semiconductors	N CHANNEL HF / VHF POWER VDMOS, 28V, 4-SOT-123A,Drain Source Voltage Vds:28V,Continuous Drain Current Id:1A,Power Dissipation Pd:16W,Operating Frequency Min:175MHz,Operating Frequency Max:230MHz,RF Transistor Case:SOT-123A RoHS Compliant: Yes	0
BLF2425M7LS140112	NXP Semiconductors	Now Ampleon, BLF2425M7LS140, Power LDMOS transistor, SOT502 (LDMOST) RoHS: Not Compliant	6	1000:$112.5000 500:$118.4200 100:$123.2900 25:$128.5700 1:$138.4600
BLF2425M8LS140112	NXP Semiconductors	Now Ampleon, BLF2425M8LS140, Power LDMOS transistor, SOT502 (LDMOST) RoHS: Not Compliant	1	1000:$112.5000 500:$118.4200 100:$123.2900 25:$128.5700 1:$138.4600
BLF242112	NXP Semiconductors	Now Ampleon, BLF242, HF-VHF power MOS transistor, SOT123 (CRFM4) RoHS: Not Compliant	4	1000:$45.7500 500:$48.1600 100:$50.1400 25:$52.2900 1:$56.3100
BLF2425M7LS140112	Ampleon	Now Ampleon, BLF2425M7LS140, Power LDMOS transistor, SOT502 (LDMOST) RoHS: Not Compliant	2	1000:$112.5000 500:$118.4200 100:$123.2900 25:$128.5700 1:$138.4600
BLF242 DISTI # 1097183	NXP Semiconductors	MOSFET, RF, SOT-123 RoHS: Compliant	0	20:$63.4900 10:$69.0600 5:$72.8900 2:$77.1800 1:$78.7200

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: BLF184XR112 OMO.#: OMO-BLF184XR112-NXP-SEMICONDUCTORS	- Bulk (Alt: BLF184XR112)
	Mfr.#: BLF2043F112 OMO.#: OMO-BLF2043F112-NXP-SEMICONDUCTORS	Neu und Original
	Mfr.#: BLF244112 OMO.#: OMO-BLF244112-1190	Neu und Original
	Mfr.#: BLF4G20-110B OMO.#: OMO-BLF4G20-110B-NXP-SEMICONDUCTORS	RF MOSFET Transistors LDMOS TNS
	Mfr.#: BLF6G27LS-135 OMO.#: OMO-BLF6G27LS-135-NXP-SEMICONDUCTORS	Neu und Original
	Mfr.#: BLF6G27LS-75.118 OMO.#: OMO-BLF6G27LS-75-118-NXP-SEMICONDUCTORS	Neu und Original
	Mfr.#: BLF7G20LS-90P OMO.#: OMO-BLF7G20LS-90P-NXP-SEMICONDUCTORS	SOT-1121B
	Mfr.#: BLF8G24LS-200P112 OMO.#: OMO-BLF8G24LS-200P112-1190	Now Ampleon, BLF8G24LS-200P, Power LDMOS transistor, SOT539 (LDMOST)
	Mfr.#: BLF8G20LS-400PGVQ OMO.#: OMO-BLF8G20LS-400PGVQ-AMPLEON	RF MOSFET Transistors Power LDMOS transisto
	Mfr.#: BLF278 OMO.#: OMO-BLF278-319	RF MOSFET Transistors RF Transisto

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2000
Menge eingeben:

Der aktuelle Preis von BLF242 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

BLF242 33
BLF24 55
BLF2 99
BLF 993

BLF242

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes