FQB85N06TM

FQB85N06TM
Mfr. #:
FQB85N06TM
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Power Field-Effect Transistor, 85A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQB85N06TM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
FAIRCHILD
Produktkategorie
FETs - Einzeln
Tags
FQB85N06T, FQB85, FQB8, FQB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
FQB85N06TM_AM002
DISTI # FQB85N06TM_AM002-ND
ON SemiconductorMOSFET N-CH 60V 85A D2PAK
Min Qty: 800
Container: Tape & Reel (TR)
Limited Supply - Call
    FQB85N06TM
    DISTI # FQB85N06TM
    ON SemiconductorTrans MOSFET N-CH 60V 85A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: FQB85N06TM)
    RoHS: Not Compliant
    Min Qty: 256
    Container: Bulk
    Americas - 0
      FQB85N06TMFairchild Semiconductor CorporationPower Field-Effect Transistor, 85A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Not Compliant
      23961
      • 1000:$1.2900
      • 500:$1.3600
      • 100:$1.4200
      • 25:$1.4800
      • 1:$1.5900
      Bild Teil # Beschreibung
      FQB85N06

      Mfr.#: FQB85N06

      OMO.#: OMO-FQB85N06-1190

      Neu und Original
      FQB85N06TM

      Mfr.#: FQB85N06TM

      OMO.#: OMO-FQB85N06TM-1190

      Power Field-Effect Transistor, 85A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      FQB85N06TM-NL

      Mfr.#: FQB85N06TM-NL

      OMO.#: OMO-FQB85N06TM-NL-1190

      Neu und Original
      FQB85N06TM_AM002

      Mfr.#: FQB85N06TM_AM002

      OMO.#: OMO-FQB85N06TM-AM002-ON-SEMICONDUCTOR

      MOSFET N-CH 60V 85A D2PAK
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3500
      Menge eingeben:
      Der aktuelle Preis von FQB85N06TM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,94 $
      1,94 $
      10
      1,84 $
      18,38 $
      100
      1,74 $
      174,15 $
      500
      1,64 $
      822,40 $
      1000
      1,55 $
      1 548,00 $
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