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IRFS3206TRRPBF

IRFS3206TRRPBF
Mfr. #:
IRFS3206TRRPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 60V 210A 3mOhm 120nC Qg
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFS3206TRRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS3206TRRPBF DatasheetIRFS3206TRRPBF Datasheet (P4-P6)IRFS3206TRRPBF Datasheet (P7-P9)IRFS3206TRRPBF Datasheet (P10-P12)
ECAD Model:
Mehr Informationen:
IRFS3206TRRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
210 A
Rds On - Drain-Source-Widerstand:
2.4 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
120 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
300 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
210 S
Abfallzeit:
83 ns
Produktart:
MOSFET
Anstiegszeit:
82 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
55 ns
Typische Einschaltverzögerungszeit:
19 ns
Teil # Aliase:
SP001573508
Gewichtseinheit:
0.139332 oz
Tags
IRFS3206T, IRFS3206, IRFS32, IRFS3, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH Si 60V 210A 3-Pin(2+Tab) D2PAK Tube / MOSFET N-CH 60V 120A D2PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 3 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
***ied Electronics & Automation
MOSFET; N Ch.; 60V; 210A; 3 MOHM; 120 NC QG; D2-PAK; Pb-Free
***roFlash
Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:120A; On Resistance Rds(On):0.0024Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 210 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 2.4 / Gate-Source Voltage V = 20 / Fall Time ns = 83 / Rise Time ns = 82 / Turn-OFF Delay Time ns = 55 / Turn-ON Delay Time ns = 19 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 300
***nell
MOSFET, N, 60V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 210A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Base Number: 3206; Current Id Max: 120A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 840A; Termination Type: Surface Mount Device; Voltage Vds Typ: 60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Infineon Automatic Opening Systems
Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRFS3206TRRPBF
DISTI # 30726354		Infineon Technologies AGTrans MOSFET N-CH Si 60V 210A 3-Pin(2+Tab) D2PAK T/R3200
  • 800:$1.4304
IRFS3206TRRPBF
DISTI # IRFS3206TRRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 60V 120A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1817In Stock
  • 100:$2.4678
  • 10:$3.0100
  • 1:$3.3700
IRFS3206TRRPBF
DISTI # IRFS3206TRRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 60V 120A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1817In Stock
  • 100:$2.4678
  • 10:$3.0100
  • 1:$3.3700
IRFS3206TRRPBF
DISTI # IRFS3206TRRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 60V 120A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		1600In Stock
  • 800:$1.7531
IRFS3206TRRPBF
DISTI # C1S322000494828		Infineon Technologies AGTrans MOSFET N-CH Si 60V 210A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		794
  • 250:$1.4302
  • 100:$1.5893
  • 25:$1.8131
  • 10:$1.9987
  • 1:$2.2794
IRFS3206TRRPBF
DISTI # C1S322000494819		Infineon Technologies AGTrans MOSFET N-CH Si 60V 210A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		3200
  • 2400:$1.1900
  • 1600:$1.2900
  • 800:$1.6800
IRFS3206TRRPBF
DISTI # IRFS3206TRRPBF		Infineon Technologies AGTrans MOSFET N-CH 60V 210A 3-Pin(2+Tab) D2PAK T/R - Cut TR (SOS) (Alt: IRFS3206TRRPBF)
RoHS: Compliant
Min Qty: 1
Container: Cut Tape		Americas - 0
  • 1:$2.1900
  • 8:$1.8900
  • 20:$1.7900
  • 40:$1.6900
  • 100:$1.4900
  • 200:$1.3900
  • 400:$1.1900
IRFS3206TRRPBF
DISTI # IRFS3206TRRPBF		Infineon Technologies AGTrans MOSFET N-CH 60V 210A 3-Pin(2+Tab) D2PAK T/R (Alt: IRFS3206TRRPBF)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
    IRFS3206TRRPBF
    DISTI # IRFS3206TRRPBF    		Infineon Technologies AGTrans MOSFET N-CH 60V 210A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS3206TRRPBF)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel    		Americas - 0
    • 800:$1.2239
    • 1600:$1.1799
    • 3200:$1.1369
    • 4800:$1.0989
    • 8000:$1.0799
    IRFS3206TRRPBF.
    DISTI # 27AC6839    		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:300W,No. of Pins:3Pins RoHS Compliant: Yes0
    • 1:$1.2300
    • 1600:$1.1800
    • 3200:$1.1400
    • 4800:$1.1000
    • 8000:$1.0800
    IRFS3206TRRPBF
    DISTI # 70019022    		Infineon Technologies AGIRFS3206TRRPBF N-channel MOSFET Transistor,210 A,60 V,3-Pin D2PAK
    RoHS: Compliant    		0
    • 800:$4.5000
    IRFS3206TRRPBF
    DISTI # 942-IRFS3206TRRPBF    		Infineon Technologies AGMOSFET MOSFT 60V 210A 3mOhm 120nC Qg
    RoHS: Compliant    		1129
    • 1:$2.8200
    • 10:$2.4000
    • 100:$2.0800
    • 250:$1.9700
    • 500:$1.7700
    IRFS3206TRRPBFInfineon Technologies AGSingle N-Channel 60V 3 mOhm 120 nC HEXFET Power Mosfet - D2PAK
    RoHS: Compliant    		800Reel
    • 800:$1.3100
    IRFS3206TRRPBF
    DISTI # 2725981    		Infineon Technologies AGMOSFET, N-CH, 60V, 120A, TO-263AB
    RoHS: Compliant    		0
    • 1:$5.3800
    • 10:$4.8000
    • 100:$3.9400
    IRFS3206TRRPBF
    DISTI # 2725981    		Infineon Technologies AGMOSFET, N-CH, 60V, 120A, TO-263AB
    RoHS: Compliant    		0
    • 1:£2.1000
    • 10:£1.7500
    • 100:£1.6000
    • 250:£1.5000
    • 500:£1.1400
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von IRFS3206TRRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,81 $
    2,81 $
    10
    2,39 $
    23,90 $
    100
    2,07 $
    207,00 $
    250
    1,96 $
    490,00 $
    500
    1,76 $
    880,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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