TH58NVG2S3HBAI4

TH58NVG2S3HBAI4
Mfr. #:
TH58NVG2S3HBAI4
Hersteller:
Toshiba Memory
Beschreibung:
NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
TH58NVG2S3HBAI4 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
TH58NVG2S3HBAI4 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
Nand Flash
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
TFBGA-63
Speichergröße:
4 Gbit
Oberflächentyp:
Parallel
Organisation:
512 M x 8
Datenbusbreite:
8 bit
Versorgungsspannung - Min.:
2.7 V
Versorgungsspannung - Max.:
3.6 V
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Verpackung:
Tablett
Speichertyp:
NAND
Marke:
Toshiba-Speicher
Feuchtigkeitsempfindlich:
ja
Produktart:
Nand Flash
Werkspackungsmenge:
210
Unterkategorie:
Speicher & Datenspeicherung
Tags
TH58NVG2S3HB, TH58NVG2S3H, TH58NVG2, TH58NVG, TH58NV, TH58N, TH58, TH5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SLC NAND Flash Parallel 3.3V 4Gbit 512M X 8Bit 63-Pin BGA Tray
***ronik
NAND-Flash 512Mx8 3.3V BGA63
***i-Key
4GB SLC NAND 24NM BGA 9X11 (EEPR
TH58NVG Series 16GB CMOS NAND EEPROM
Toshiba TH58NVG Series 16GB CMOS Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) offers 3.3V and is organized as (4096+256) bytes x 64 pages x 8192 blocks. Program and read data is transferred between the register and the memory cell array in 4352-byte increments, granted through two 4352-byte static registers. I/O pins are utilized for both address and data input/output including command inputs through the TH58NVG Series serial type memory. Applications include image file memory for still cameras, solid-state file storage and voice recording.Learn More
Teil # Mfg. Beschreibung Aktie Preis
TH58NVG2S3HBAI4
DISTI # V36:1790_17579805
Toshiba America Electronic ComponentsSLC NAND Flash 3.3V 4G-bit0
  • 210000:$3.1510
  • 105000:$3.1560
  • 21000:$3.7980
  • 2100:$5.1100
  • 210:$5.3400
TH58NVG2S3HBAI4
DISTI # TH58NVG2S3HBAI4-ND
Toshiba Semiconductor and Storage Products4GB SLC NAND 24NM BGA 9X11 (EEPR
RoHS: Compliant
Min Qty: 1
Container: Tray
210In Stock
  • 1050:$3.8083
  • 630:$3.9776
  • 420:$4.2424
  • 210:$4.2588
  • 50:$4.7474
  • 25:$4.7804
  • 10:$4.8730
  • 1:$5.3400
TH58NVG2S3HBAI4
DISTI # TH58NVG2S3HBAI4
Toshiba America Electronic ComponentsSLC NAND Flash Parallel 3.3V 4Gbit 512M X 8Bit 63-Pin BGA Tray (Alt: TH58NVG2S3HBAI4)
RoHS: Compliant
Min Qty: 1050
Container: Tray
Asia - 1050
  • 2100:$2.3280
  • 1050:$2.3303
TH58NVG2S3HBAI4
DISTI # TH58NVG2S3HBAI4
Toshiba America Electronic ComponentsSLC NAND Flash Parallel 3.3V 4Gbit 512M X 8Bit 63-Pin BGA Tray - Trays (Alt: TH58NVG2S3HBAI4)
RoHS: Compliant
Min Qty: 210
Container: Tray
Americas - 0
  • 2100:$3.0900
  • 840:$3.1900
  • 1260:$3.1900
  • 420:$3.2900
  • 210:$3.3900
TH58NVG2S3HBAI4_TRAY
DISTI # TH58NVG2S3HBAI4_TRAY
Toshiba America Electronic ComponentsNAND Flash Memory (Alt: TH58NVG2S3HBAI4_TRAY)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€2.9900
  • 500:€3.1900
  • 100:€3.2900
  • 50:€3.4900
  • 25:€3.5900
  • 10:€3.7900
  • 1:€4.0900
TH58NVG2S3HBAI4
DISTI # 757-TH58NVG2S3HBAI4
Toshiba America Electronic ComponentsNAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM)
RoHS: Compliant
210
  • 1:$5.3400
  • 10:$4.8700
  • 25:$4.7800
  • 50:$4.7500
  • 100:$4.2600
  • 250:$4.2400
  • 500:$3.9800
  • 1000:$3.8100
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OMO.#: OMO-MR4A08BCYS35

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IS61WV5128BLL-10TLI

Mfr.#: IS61WV5128BLL-10TLI

OMO.#: OMO-IS61WV5128BLL-10TLI

SRAM 4Mb (512k x 8) 10ns Async SRAM 3.3v
SI7461DP-T1-E3

Mfr.#: SI7461DP-T1-E3

OMO.#: OMO-SI7461DP-T1-E3

MOSFET -60V Vds 20V Vgs PowerPAK SO-8
74AVC1T1022GUX

Mfr.#: 74AVC1T1022GUX

OMO.#: OMO-74AVC1T1022GUX

Translation - Voltage Levels 74AVC1T1022GU/XQFN10/REEL 7" Q
AS4C256M16D3B-12BIN

Mfr.#: AS4C256M16D3B-12BIN

OMO.#: OMO-AS4C256M16D3B-12BIN

DRAM 4G 1.5V 800MHz 256Mx16 DDR3 I-Temp
MR4A08BCYS35

Mfr.#: MR4A08BCYS35

OMO.#: OMO-MR4A08BCYS35-EVERSPIN-TECHNOLOGIES

NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM
GRM033R71E332MA12D

Mfr.#: GRM033R71E332MA12D

OMO.#: OMO-GRM033R71E332MA12D-MURATA-ELECTRONICS

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0201 3300pF 25volts X7R 20%
IS61WV5128BLL-10TLI

Mfr.#: IS61WV5128BLL-10TLI

OMO.#: OMO-IS61WV5128BLL-10TLI-INTEGRATED-SILICON-SOLUTION

SRAM 4Mb (512k x 8) 10ns Async SRAM 3.3v
SMTU2032-C.TR

Mfr.#: SMTU2032-C.TR

OMO.#: OMO-SMTU2032-C-TR-1147

Battery Holders, Clips & Contacts Coin Cell Battery Holders SMT HOLDER ON T&R FOR CR2032-485/REEL
Verfügbarkeit
Aktie:
210
Auf Bestellung:
2193
Menge eingeben:
Der aktuelle Preis von TH58NVG2S3HBAI4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
5,34 $
5,34 $
10
4,87 $
48,70 $
25
4,78 $
119,50 $
50
4,75 $
237,50 $
100
4,26 $
426,00 $
250
4,24 $
1 060,00 $
500
3,98 $
1 990,00 $
1000
3,81 $
3 810,00 $
2500
3,56 $
8 900,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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