MSC040SMA120B

MSC040SMA120B
Mfr. #:
MSC040SMA120B
Hersteller:
Microchip / Microsemi
Beschreibung:
SILICON CARBIDE POWER TRANSISTORS/MODULES
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MSC040SMA120B Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
MSC040SMA120B Mehr Informationen
Produkteigenschaft
Attributwert
Tags
MSC040S, MSC040, MSC04, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH SiC 1.2KV 64A Tube
***hardson RFPD
SILICON CARBIDE MOSFETS
***i-Key
MOSFET N-CH 1200V TO247
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
Teil # Mfg. Beschreibung Aktie Preis
MSC040SMA120B
DISTI # V36:1790_21374926
Microsemi CorporationSILICON CARBIDE POWER TRANSISTORS/MODULES0
    MSC040SMA120B
    DISTI # MSC040SMA120B-ND
    Microsemi CorporationMOSFET N-CH 1200V TO247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    On Order
    • 120:$24.5769
    • 30:$26.4437
    • 10:$28.7770
    • 1:$31.1100
    MSC040SMA120B
    DISTI # MSC040SMA120B
    Microchip Technology IncSilicon Carbide Power MOSFET N-Channel 1200V 67A 3-Pin TO-247 - Rail/Tube (Alt: MSC040SMA120B)
    RoHS: Compliant
    Min Qty: 90
    Container: Tube
    Americas - 0
    • 900:$19.2900
    • 450:$19.5900
    • 270:$20.1900
    • 180:$20.8900
    • 90:$21.5900
    MSC040SMA120B
    DISTI # 494-MSC040SMA120B
    Microchip Technology IncMOSFET
    RoHS: Compliant
    0
    • 1:$36.3400
    • 5:$35.3900
    • 10:$33.9800
    • 25:$32.7900
    • 50:$31.1100
    • 100:$29.2000
    • 250:$27.2800
    Bild Teil # Beschreibung
    MSC040SMA120B

    Mfr.#: MSC040SMA120B

    OMO.#: OMO-MSC040SMA120B

    MOSFET UNRLS, FG, SIC MOSFET, TO-247
    MSC040SMA120J

    Mfr.#: MSC040SMA120J

    OMO.#: OMO-MSC040SMA120J

    MOSFET UNRLS, FG, SIC MOSFET, SOT-227
    MSC040SMA120S

    Mfr.#: MSC040SMA120S

    OMO.#: OMO-MSC040SMA120S

    MOSFET UNRLS, FG, SIC MOSFET, TO-268
    MSC040SMA120S

    Mfr.#: MSC040SMA120S

    OMO.#: OMO-MSC040SMA120S-1190

    Transistor MOSFET N-CH 1200V 65A 3-Pin D3PAK Tube (Alt: MSC040SMA120S)
    MSC04020D2942BE100

    Mfr.#: MSC04020D2942BE100

    OMO.#: OMO-MSC04020D2942BE100-1190

    Neu und Original
    MSC040SMA120B

    Mfr.#: MSC040SMA120B

    OMO.#: OMO-MSC040SMA120B-1190

    SILICON CARBIDE POWER TRANSISTORS/MODULES
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von MSC040SMA120B dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    28,94 $
    28,94 $
    10
    27,49 $
    274,88 $
    100
    26,04 $
    2 604,15 $
    500
    24,59 $
    12 297,40 $
    1000
    23,15 $
    23 148,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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