BFP 540FESD H6327

Mfr. #:: BFP 540FESD H6327
Hersteller:: Infineon Technologies
Beschreibung:: RF Bipolar Transistors RF BIP TRANSISTOR
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BFP 540FESD H6327 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: BFP 540FESD H6327 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: HF-Bipolartransistoren

RoHS:: Y

Serie:: BFP540

Transistortyp:: Bipolar

Technologie:: Si

Polarität des Transistors:: NPN

DC-Kollektor/Basisverstärkung hfe Min:: 50

Kollektor- Emitterspannung VCEO Max:: 4.5 V

Emitter- Basisspannung VEBO:: 1 V

Kontinuierlicher Kollektorstrom:: 80 mA

Minimale Betriebstemperatur:: - 65 C

Maximale Betriebstemperatur:: + 150 C

Aufbau:: Single

Montageart:: SMD/SMT

Paket / Koffer:: TSFP-4

Verpackung:: Spule

Arbeitsfrequenz:: 30 GHz

Typ:: Bipolares HF-Kleinsignal

Marke:: Infineon-Technologien

Pd - Verlustleistung:: 250 mW

Produktart:: HF-Bipolartransistoren

Werkspackungsmenge:: 3000

Unterkategorie:: Transistoren

Teil # Aliase:: BFP540FESDH6327XTSA1 BFP54FESDH6327XT SP000745300

Gewichtseinheit:: 0.000066 oz

Tags: BFP540FESDH, BFP540FES, BFP540FE, BFP540F, BFP540, BFP54, BFP5, BFP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BFP 540FESD H6327 Mehr Informationen

RF Transistors: Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BFP540FESDH6327XTSA1 DISTI # V72:2272_06384828	Infineon Technologies AG	Trans RF BJT NPN 4.5V 0.08A Automotive 4-Pin TSFP T/R RoHS: Compliant	3000	3000:$0.1765 1000:$0.2224 500:$0.2329 250:$0.2587 100:$0.2875 25:$0.4208 10:$0.5143 1:$0.6177
BFP540FESDH6327XTSA1 DISTI # V36:1790_06384828	Infineon Technologies AG	Trans RF BJT NPN 4.5V 0.08A Automotive 4-Pin TSFP T/R RoHS: Compliant	0
BFP540FESDH6327XTSA1 DISTI # BFP540FESDH6327XTSA1CT-ND	Infineon Technologies AG	RF TRANS NPN 5V 30GHZ 4TSFP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	11144In Stock	1000:$0.2294 500:$0.2968 100:$0.3778 10:$0.5060 1:$0.5900
BFP540FESDH6327XTSA1 DISTI # BFP540FESDH6327XTSA1DKR-ND	Infineon Technologies AG	RF TRANS NPN 5V 30GHZ 4TSFP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	11144In Stock	1000:$0.2294 500:$0.2968 100:$0.3778 10:$0.5060 1:$0.5900
BFP540FESDH6327XTSA1 DISTI # BFP540FESDH6327XTSA1TR-ND	Infineon Technologies AG	RF TRANS NPN 5V 30GHZ 4TSFP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	30000:$0.1677 15000:$0.1769 6000:$0.1900 3000:$0.2031
BFP540FESDH6327XTSA1 DISTI # 27526715	Infineon Technologies AG	Trans RF BJT NPN 4.5V 0.08A Automotive 4-Pin TSFP T/R RoHS: Compliant	3000	3000:$0.1765 1000:$0.2224 500:$0.2329 250:$0.2587 100:$0.2875 39:$0.4208
BFP540FESDH6327XTSA1 DISTI # BFP540FESDH6327XTSA1	Infineon Technologies AG	Trans GP BJT NPN 4.5V 0.08A 4-Pin TSFP T/R - Tape and Reel (Alt: BFP540FESDH6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 15000	30000:$0.1659 18000:$0.1689 12000:$0.1749 6000:$0.1809 3000:$0.1879
BFP540FESDH6327 DISTI # BFP 540FESD H6327	Infineon Technologies AG	Trans GP BJT NPN 4.5V 0.08A 4-Pin TSFP T/R (Alt: BFP 540FESD H6327) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	150000:$0.2882 75000:$0.2919 30000:$0.2957 15000:$0.2996 9000:$0.3077 6000:$0.3162 3000:$0.3252
BFP540FESDH6327 DISTI # SP000745300	Infineon Technologies AG	Trans GP BJT NPN 4.5V 0.08A 4-Pin TSFP T/R (Alt: SP000745300) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1919 18000:€0.2019 12000:€0.2349 6000:€0.2759 3000:€0.3209
BFP540FESDH6327XTSA1 DISTI # BFP540FESDH6327XTSA1	Infineon Technologies AG	Trans GP BJT NPN 4.5V 0.08A 4-Pin TSFP T/R - Bulk (Alt: BFP540FESDH6327XTSA1) RoHS: Compliant Min Qty: 1924 Container: Bulk	Americas - 0	19240:$0.1649 9620:$0.1679 5772:$0.1739 3848:$0.1799 1924:$0.1869
BFP540FESDH6327XTSA1 DISTI # SP000745300	Infineon Technologies AG	Trans GP BJT NPN 4.5V 0.08A 4-Pin TSFP T/R (Alt: SP000745300) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1729 18000:€0.1859 12000:€0.2019 6000:€0.2199 3000:€0.2699
BFP540FESDH6327XTSA1. DISTI # 27AC0919	Infineon Technologies AG	Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:4.5V,Transition Frequency ft:30GHz,Power Dissipation Pd:250mW,DC Collector Current:80mA,DC Current Gain hFE:50hFE,RF Transistor Case:TSFP,No. of Pins:4Pins RoHS Compliant: Yes	0	30000:$0.1680 18000:$0.1710 12000:$0.1770 6000:$0.1830 1:$0.1900
BFP 540FESD H6327 DISTI # 726-BFP540FESDH6327	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTOR RoHS: Compliant	3587	1:$0.5700 10:$0.4730 100:$0.2890 1000:$0.2230 3000:$0.1900
BFP540FESDH6327XTSA1 DISTI # 726-BFP540FESDH6327X	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTOR RoHS: Compliant	5415	1:$0.5700 10:$0.4730 100:$0.2890 1000:$0.2230 3000:$0.1900
BFP540FESDH6327XTSA1	Infineon Technologies AG	RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, S Band, Silicon, NPN RoHS: Compliant	1460	1000:$0.1700 500:$0.1800 100:$0.1900 25:$0.2000 1:$0.2100
BFP540FESDH6327XTSA1 DISTI # 1107135P	Infineon Technologies AG	LONOISE RF BJT NPN 4.5V 80MA 30GHZ TSFP4, RL	2610	300:£0.1530
BFP540FESDH6327XT	Infineon Technologies AG	* FREE SHIPPING ORDERS OVER $100 *	1188	219:$0.1650 46:$0.2750 1:$0.5500
BFP540FESDH6327XT	Infineon Technologies AG		1485	13:$0.4125 50:$0.2681 188:$0.1547 648:$0.1320 1403:$0.1155
BFP540FESDH6327	Infineon Technologies AG		2666
BFP540FESDH6327XTSA1 DISTI # 2480670	Infineon Technologies AG	RF TRANSISTOR, NPN, 4.5V, 30GHZ, TSFP RoHS: Compliant	95	3000:$0.2920 1000:$0.3430 100:$0.4450 5:$0.7280
BFP540FESDH6327XTSA1 DISTI # 2480670RL	Infineon Technologies AG	RF TRANSISTOR, NPN, 4.5V, 30GHZ, TSFP RoHS: Compliant	0	3000:$0.2920 1000:$0.3430 100:$0.4450 5:$0.7280
BFP540FESDH6327XTSA1 DISTI # 2480670	Infineon Technologies AG	RF TRANSISTOR, NPN, 4.5V, 30GHZ, TSFP RoHS: Compliant	0	500:£0.1730 250:£0.1990 100:£0.2240 25:£0.3760 5:£0.4170
BFP540FESDH6327	Infineon Technologies AG	4.5V,80mA,Bipolar RF NPN Transistor	2400	1:$0.3100 100:$0.2600 500:$0.2300 1000:$0.2200

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1986
Menge eingeben:

Der aktuelle Preis von BFP 540FESD H6327 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,57 $~~; ~~0,57 $~~

10: ~~0,47 $~~; ~~4,73 $~~

100: ~~0,29 $~~; ~~28,90 $~~

1000: ~~0,22 $~~; ~~223,00 $~~

Beginnen mit

BFP540FESDH 5
BFP540FES 7
BFP540FE 10
BFP540F 11
BFP540 37
BFP54 38
BFP5 63
BFP 692

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BFP 540FESD H6327

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes