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IRF1018EPBF

IRF1018EPBF
Mfr. #:
IRF1018EPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF1018EPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF1018EPBF DatasheetIRF1018EPBF Datasheet (P4-P6)IRF1018EPBF Datasheet (P7-P9)IRF1018EPBF Datasheet (P10-P11)
ECAD Model:
Mehr Informationen:
IRF1018EPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
79 A
Rds On - Drain-Source-Widerstand:
7.5 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
46 nC
Pd - Verlustleistung:
110 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001574502
Gewichtseinheit:
0.211644 oz
Tags
IRF1018, IRF101, IRF10, IRF1, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 79A;TO-220AB;PD 110W;-55deg
***ure Electronics
Single N-Channel 60 V 8.4 mOhm 46 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 60V 79A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 110 W
*** Stop Electro
Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:79A; Package / Case:TO-220; Power Dissipation Pd:110W; Pulse Current Idm:315A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 6.8Milliohms;ID 84A;TO-220AB;PD 140W;-55deg
*** Source Electronics
Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 75A TO-220AB
***ure Electronics
Single N-Channel 60 V 8.5 mOhm 86 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***roFlash
Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ment14 APAC
MOSFET, N, 60V, 84A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:60V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:1.11°C/W; On State resistance @ Vgs = 10V:8.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:340A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 60 V 7.3 mOhm 87 nC HEXFET® Power Mosfet - TO-220-3
***ark
TUBE / MOSFET, 60V, 75A, 7.3 mOhm, 58nC, TO-220
***Yang
Trans MOSFET N-CH 60V 75A 3-Pin TO-220AB Tube - Rail/Tube
***et
MOSFET, 60V, 75A, 7.3 MOHM, 58 NC QG, TO-220AB
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 99 W
***ment14 APAC
MOSFET, N CH, 60V, 75A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Source Voltage Vds:60V; On Resistance
***roFlash
Power Field-Effect Transistor, 75A I(D), 60V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 80A;TO-220AB;PD 140W;-55de
***ure Electronics
Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-220-3
***klin Elektronik
INFINEON THT MOSFET NFET 75V 80A 9mΩ 175°C TO-220 IRFB3607PBF
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 140 W
***ineon
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
***ment14 APAC
MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:140W; Pulse Current Idm:310A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***eco
Transistor RFP70N06 N-Channel MOSFET 60 Volt 70 Amp TO-220AB
***ure Electronics
N-Channel 60 V 0.014 Ohm Flange Mount Power Mosfet - TO-220AB
***emi
N-Channel Power MOSFET 60V, 70A, 14mΩ
***r Electronics
Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA78440.
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:60V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Current Temperature:25°C; Device Marking:RFP70N06; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:14mohm; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***Yang
TO-220AB, SINGLE, N-CH, 60V, 0.013 OHM POWERTRENCH MOSFET - Bulk
***ical
Trans MOSFET N-CH 60V 10.9A 3-Pin(3+Tab) TO-220 Tube
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:62A; On Resistance, Rds(on):13.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-TO-220AB ;RoHS Compliant: Yes
***ure Electronics
N-Channel 55 V 0.012 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB
***hard Electronics
Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220; UltraFET®
***emi
N-Channel UltraFET Power MOSFET 55V, 75A, 12mΩ
***Yang
Trans MOSFET N-CH 55V 75A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***enic
55V 75A 12m´Î@10V75A 200W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 75A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:12mohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75339.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Infineon Automatic Opening Systems
Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRF1018EPBF
DISTI # IRF1018EPBF-ND		Infineon Technologies AGMOSFET N-CH 60V 79A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		3172In Stock
  • 1000:$0.6153
  • 500:$0.7624
  • 100:$0.9647
  • 10:$1.2040
  • 1:$1.3500
IRF1018EPBF
DISTI # 08N6374		Infineon Technologies AGN CHANNEL MOSFET, 60V, 79A TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:79A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0071ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes267
  • 1:$1.3100
  • 10:$1.1400
  • 100:$0.9050
  • 500:$0.8160
  • 1000:$0.6730
IRF1018EPBF
DISTI # 70017886		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 60V,RDS(ON) 7.1 Milliohms,ID 79A,TO-220AB,PD 110W,-55deg
RoHS: Compliant		0
  • 1100:$1.6200
IRF1018EPBF
DISTI # 942-IRF1018EPBF		Infineon Technologies AGMOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg
RoHS: Compliant		1096
  • 1:$1.1700
  • 10:$0.9980
  • 100:$0.7670
  • 500:$0.6780
  • 1000:$0.5350
IRF1018EPBF
DISTI # 6886800		Infineon Technologies AGMOSFET N-CHANNEL 60V 79A HEXFET TO220AB, PK1925
  • 5:£0.9480
  • 25:£0.8080
  • 50:£0.7140
  • 100:£0.6180
  • 250:£0.5700
IRF1018EPBF
DISTI # TMOSP11692		Infineon Technologies AGN-CH 60V 79A 8,4mOhm TO220-3
RoHS: Compliant		Stock DE - 0Stock US - 0
  • 2000:$0.4101
IRF1018EPBF
DISTI # IRF1018EPBF		Infineon Technologies AGN-Ch 60V 79A 110W 0,0084R TO220AB
RoHS: Compliant		960
  • 10:€0.6055
  • 50:€0.3655
  • 200:€0.3055
  • 500:€0.2940
IRF1018EPBF
DISTI # 1602223		Infineon Technologies AGMOSFET, N, TO-220
RoHS: Compliant		6238
  • 5:£0.8570
  • 25:£0.7050
  • 100:£0.5920
  • 250:£0.5810
  • 500:£0.5230
IRF1018EPBF
DISTI # 1602223		Infineon Technologies AGMOSFET, N, TO-220
RoHS: Compliant		6193
  • 1:$1.8500
  • 10:$1.5800
  • 100:$1.2200
  • 500:$1.0800
  • 1000:$0.8470
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 LOGIC GATES AND INVERTERS
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von IRF1018EPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,09 $
1,09 $
10
0,94 $
9,37 $
100
0,72 $
71,90 $
500
0,64 $
318,00 $
1000
0,50 $
502,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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