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DMTH6004LPS-13

DMTH6004LPS-13
Mfr. #:
DMTH6004LPS-13
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 100A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMTH6004LPS-13 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
DMTH6004LPS-13 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerDI5060-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
22 A
Rds On - Drain-Source-Widerstand:
3.1 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
96.3 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
2.6 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
DMTH6004
Transistortyp:
1 N-Channel
Marke:
Eingebaute Dioden
Abfallzeit:
32.9 ns
Produktart:
MOSFET
Anstiegszeit:
17.7 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
53.5 ns
Typische Einschaltverzögerungszeit:
9.9 ns
Gewichtseinheit:
0.003386 oz
Tags
DMTH6004, DMTH600, DMTH60, DMTH6, DMTH, DMT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 22A 8-Pin PowerDI EP T/R
***et
MOSFET BVDSS: 41V~60V POWERDI5060-8 T&R 2.5K
***i-Key
MOSFET N-CH 60V 22A PWRDI5060-8
***ronik
N-CH 60V 100A 3,1mOhm PwDI5060
***ark
Mosfet, Aec-Q101, N-Ch, 100A, 60V; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0025Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
DMTx MOSFETs
Diodes Incorporated DMTx MOSFETs are N-channel enhancement mode MOSFETs with low on-resistance and fast switching. These MOSFETs are also designed to meet the stringent requirements of automotive applications. Diodes Incorporated DMTx MOSFETs are ideal for high-efficiency power management applications.
Gate Drivers
Diodes Incorporated Gate Drivers cover a multitude of applications in power systems and motor drives. These gate drivers act as the interface between microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.
DMTH6004 N-Channel Enhancement Mode MOSFET
Diodes Inc. DMTH6004 N-channel Enhance mode MOSFETs are designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance. DMTH MOSFETs provide BVDSS voltage of 60V and are rated to 175ºC. These MOSFETs are ideal for high-efficiency power management applications. Applications include a primary switch in isolated DC-DC, synchronous rectifier, and load switch.Learn more
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von DMTH6004LPS-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,55 $
1,55 $
10
1,31 $
13,10 $
100
1,05 $
105,00 $
500
0,92 $
459,00 $
1000
0,76 $
760,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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