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SIHJ7N65E-T1-GE3

SIHJ7N65E-T1-GE3
Mfr. #:
SIHJ7N65E-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 650V Vds 30V Vgs PowerPAK SO-8L
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHJ7N65E-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHJ7N65E-T1-GE3 DatasheetSIHJ7N65E-T1-GE3 Datasheet (P4-P6)SIHJ7N65E-T1-GE3 Datasheet (P7-P9)SIHJ7N65E-T1-GE3 Datasheet (P10-P11)
ECAD Model:
Mehr Informationen:
SIHJ7N65E-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8L-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
7.9 A
Rds On - Drain-Source-Widerstand:
520 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
22 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
96 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1.04 mm
Länge:
6.15 mm
Serie:
E
Breite:
5.13 mm
Marke:
Vishay / Siliconix
Abfallzeit:
18 ns
Produktart:
MOSFET
Anstiegszeit:
18 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
30 ns
Typische Einschaltverzögerungszeit:
16 ns
Gewichtseinheit:
0.017870 oz
Tags
SIHJ, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***V
    M***V
    RU

    On my laser sight, the point is perfectly even, and here the point is not even

    2019-03-11
    R***o
    R***o
    LV

    Excellent transistors good replacement kt805

    2019-02-02
    E**c
    E**c
    UA

    Fast shipping

    2019-04-13
    E**j
    E**j
    IT

    thank you

    2019-02-20
***ical
Trans MOSFET N-CH 650V 7.9A 5-Pin(4+Tab) PowerPAK SO T/R
***nell
MOSFET, N-CH, 650V, 7.9A, POWERPAKSO
***ark
N-Channel 650V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
600V/650V E Series PowerPAK SO-8L MOSFETs
Vishay 600V/650V E Series PowerPAK® SO-8L MOSFETs offer increased reliability and reduced package inductance for lighting, industrial, telecom, computing, and consumer applications. Built on Vishay's Superjunction technology, these power MOSFETs feature low maximum ON-resistance down to 0.52Ω at 10V, ultra-low gate charge down to 17nC, and low gate charge times ON-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications.Learn More
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHJ7N65E-T1-GE3
DISTI # V72:2272_17582994		Vishay IntertechnologiesTrans MOSFET N-CH 650V 7.9A 5-Pin(4+Tab) PowerPAK SO T/R2970
  • 75000:$1.0102
  • 30000:$1.0195
  • 15000:$1.0288
  • 6000:$1.0684
  • 3000:$1.1081
  • 1000:$1.1973
  • 500:$1.3949
  • 250:$1.6096
  • 100:$1.6419
  • 50:$2.0264
  • 25:$2.0718
  • 10:$2.0941
  • 1:$2.7976
SIHJ7N65E-T1-GE3
DISTI # SIHJ7N65E-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 650V POWERPAK SO-8L
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3043In Stock
  • 1000:$1.2985
  • 500:$1.5671
  • 100:$1.9074
  • 10:$2.3730
  • 1:$2.6400
SIHJ7N65E-T1-GE3
DISTI # SIHJ7N65E-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 650V POWERPAK SO-8L
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3043In Stock
  • 1000:$1.2985
  • 500:$1.5671
  • 100:$1.9074
  • 10:$2.3730
  • 1:$2.6400
SIHJ7N65E-T1-GE3
DISTI # SIHJ7N65E-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 650V POWERPAK SO-8L
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 6000:$1.1302
  • 3000:$1.1737
SIHJ7N65E-T1-GE3
DISTI # 25817591		Vishay IntertechnologiesTrans MOSFET N-CH 650V 7.9A 5-Pin(4+Tab) PowerPAK SO T/R2970
  • 7:$2.7976
SIHJ7N65E-T1-GE3
DISTI # SIHJ7N65E-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 7.9A 8-Pin PowerPAK SO T/R (Alt: SIHJ7N65E-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€1.0869
  • 18000:€1.1489
  • 12000:€1.2939
  • 6000:€1.5689
  • 3000:€2.2399
SIHJ7N65E-T1-GE3
DISTI # SIHJ7N65E-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 7.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIHJ7N65E-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$1.0609
  • 18000:$1.0899
  • 12000:$1.1209
  • 6000:$1.1689
  • 3000:$1.2049
SIHJ7N65E-T1-GE3
DISTI # 20AC3840		Vishay IntertechnologiesN-CHANNEL 650V0
  • 10000:$1.0400
  • 6000:$1.0800
  • 4000:$1.1200
  • 2000:$1.2500
  • 1000:$1.3100
  • 1:$1.4000
SIHJ7N65E-T1-GE3
DISTI # 78-SIHJ7N65E-T1-GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs PowerPAK SO-8L
RoHS: Compliant		5935
  • 1:$2.5700
  • 10:$2.1300
  • 100:$1.6500
  • 500:$1.4500
  • 1000:$1.2000
  • 3000:$1.1100
  • 6000:$1.0700
SIHJ7N65E-T1-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs PowerPAK SO-8L
RoHS: Compliant		Americas -
    SIHJ7N65E-T1-GE3
    DISTI # 2630943    		Vishay IntertechnologiesMOSFET, N-CH, 650V, 7.9A, POWERPAKSO3003
    • 500:£0.9990
    • 250:£1.0700
    • 100:£1.1300
    • 10:£1.4700
    • 1:£1.9900
    SIHJ7N65E-T1-GE3
    DISTI # 2630943    		Vishay IntertechnologiesMOSFET, N-CH, 650V, 7.9A, POWERPAKSO
    RoHS: Compliant    		3003
    • 6000:$1.6100
    • 3000:$1.6700
    • 1000:$1.8100
    • 500:$2.1900
    • 100:$2.4900
    • 10:$3.2100
    • 1:$3.8700
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    SIHD2N80E-GE3

    Mfr.#: SIHD2N80E-GE3

    OMO.#: OMO-SIHD2N80E-GE3-VISHAY

    		 MOSFET N-CH 800V 2.8A DPAK
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von SIHJ7N65E-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,57 $
    2,57 $
    10
    2,13 $
    21,30 $
    100
    1,65 $
    165,00 $
    500
    1,45 $
    725,00 $
    1000
    1,20 $
    1 200,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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