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HGTP20N60A4

HGTP20N60A4
Mfr. #:
HGTP20N60A4
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors 600V N-Channel IGBT SMPS Series
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTP20N60A4 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HGTP20N60A4 DatasheetHGTP20N60A4 Datasheet (P4-P6)HGTP20N60A4 Datasheet (P7-P9)HGTP20N60A4 Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-220-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
1.8 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
70 A
Pd - Verlustleistung:
290 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
HGTP20N60A4
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
70 A
Höhe:
9.4 mm
Länge:
10.67 mm
Breite:
4.83 mm
Marke:
ON Semiconductor / Fairchild
Kontinuierlicher Kollektorstrom:
70 A
Gate-Emitter-Leckstrom:
+/- 250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
800
Unterkategorie:
IGBTs
Teil # Aliase:
HGTP20N60A4_NL
Gewichtseinheit:
0.063493 oz
Tags
HGTP20N60A, HGTP20N6, HGTP20, HGTP2, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 600V 70A 290000mW 3-Pin(3+Tab) TO-220AB Rail
***p One Stop Global
Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
HGTP20N60A4 Series 600 V 70 A Flange Mount SMPS N-Channel IGBT-TO-220AB
***ter Electronics
TRANS IGBT CHIP N-CH 600V 70A 3PIN TO-220AB
***o-Tech
Transistor IGBT N-Ch 600V 70A TO220AB
***i-Key
IGBT N-CH SMPS 600V 70A TO220AB
***ser
IGBTs 600V N-Channel IGBT SMPS Series
*** Source Electronics
IGBT 600V 70A 290W TO220AB
***eco
PWR IGBT 45A,600V SMPS N-CH TO-22-A<AZ
***inecomponents.com
PWR IGBT 45A,600V SMPS N-CH TO-22-A
***Semiconductor
600V, SMPS IGBT
***ark
DC Collector Current:70A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:3Pins; Operating Temperature Max:150�C; Product Range:-; MSL:- RoHS Compliant: Yes
***rchild Semiconductor
The HGTP20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
***nell
IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:70A; Voltage, Vce Sat Max:2.7V; Power Dissipation:290W; Case Style:TO-220AB; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:280A; No. of Pins:3; Pin Format:GCE; Power, Pd:290W; Power, Ptot:290W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:32ns; Time, Rise:12ns; Transistors, No. of:1
***ment14 APAC
IGBT, N, TO-220; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:GCE; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Power Dissipation Ptot Max:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Teil # Mfg. Beschreibung Aktie Preis
HGTP20N60A4
DISTI # V36:1790_06359586		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 290000mW 3-Pin(3+Tab) TO-220AB Rail2462
  • 1:$1.4897
HGTP20N60A4
DISTI # HGTP20N60A4-ND		ON SemiconductorIGBT 600V 70A 290W TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		7In Stock
  • 3200:$1.5795
  • 800:$1.9665
  • 100:$2.3100
  • 25:$2.6652
  • 10:$2.8190
  • 1:$3.1400
HGTP20N60A4
DISTI # 33956814		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 290000mW 3-Pin(3+Tab) TO-220AB Rail2462
  • 5:$1.4897
HGTP20N60A4
DISTI # 33655046		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 290000mW 3-Pin(3+Tab) TO-220AB Rail2288
  • 8:$1.3203
HGTP20N60A4
DISTI # HGTP20N60A4		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-220AB Rail (Alt: HGTP20N60A4)
RoHS: Compliant
Min Qty: 1		Europe - 503
  • 500:€1.2900
  • 1000:€1.2900
  • 50:€1.3900
  • 100:€1.3900
  • 25:€1.4900
  • 10:€1.5900
  • 1:€1.7900
HGTP20N60A4
DISTI # HGTP20N60A4		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-220AB Rail (Alt: HGTP20N60A4)
RoHS: Compliant
Min Qty: 800		Asia - 0
  • 40000:$1.6082
  • 20000:$1.6350
  • 8000:$1.6914
  • 4000:$1.7518
  • 2400:$1.8167
  • 1600:$1.8865
  • 800:$1.9620
HGTP20N60A4
DISTI # HGTP20N60A4		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: HGTP20N60A4)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 8000:$1.6790
  • 4800:$1.7215
  • 3200:$1.7436
  • 1600:$1.7662
  • 800:$1.7778
HGTP20N60A4
DISTI # 58K1597		ON SemiconductorSINGLE IGBT, 600V, 70A,DC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:290W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes0
  • 100:$2.5900
  • 50:$2.7700
  • 25:$2.9500
  • 10:$3.1300
  • 1:$3.4700
HGTP20N60A4.
DISTI # 15AC3006		Fairchild Semiconductor CorporationDC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:290W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes0
  • 8000:$1.6800
  • 4800:$1.7300
  • 3200:$1.7500
  • 1600:$1.7700
  • 1:$1.7800
HGTP20N60A4ON SemiconductorHGTP20N60A4 Series 600 V 70 A Flange Mount SMPS N-Channel IGBT-TO-220AB
RoHS: Compliant		300Tube
  • 10:$2.7100
  • 50:$2.3000
  • 100:$2.2300
  • 250:$2.1500
  • 500:$2.0900
HGTP20N60A4
DISTI # 512-HGTP20N60A4		ON SemiconductorIGBT Transistors 600V N-Channel IGBT SMPS Series
RoHS: Compliant		0
    HGTP20N60A4
    DISTI # HGTP20N60A4    		ON SemiconductorTransistor: IGBT,600V,40A,290W,TO220-393
    • 100:$1.6900
    • 25:$1.8100
    • 10:$2.1400
    • 3:$2.6500
    • 1:$2.9100
    HGTP20N60A4
    DISTI # 1095118    		ON SemiconductorIGBT, N, TO-220
    RoHS: Compliant    		0
    • 1600:$3.1300
    • 800:$3.7100
    • 100:$4.3500
    • 10:$5.3100
    • 1:$5.8900
    HGTP20N60A4
    DISTI # XSFP00000149448    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		162 in Stock0 on Order
    • 162:$3.6100
    • 37:$3.8700
    HGTP20N60A4
    DISTI # XSKDRABV0020486    		ON SEMICONDUCTOR 
    RoHS: Compliant    		640 in Stock0 on Order
    • 640:$1.9600
    • 238:$2.1000
    Bild Teil # Beschreibung
    MGJ2D051509SC

    Mfr.#: MGJ2D051509SC

    OMO.#: OMO-MGJ2D051509SC-MURATA-POWER-SOLUTIONS

    		 Isolated DC/DC Converters 2W 5Vin 15/-8.7Vout 80/40mA SIP
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von HGTP20N60A4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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