IDH10G120C5XKSA1

IDH10G120C5XKSA1
Mfr. #:
IDH10G120C5XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IDH10G120C5XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IDH10G120C5XKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Dioden, Gleichrichter - Einzeln
Serie
ThinQ!
Produkt
Schottky-Siliziumkarbid-Dioden
Verpackung
Rohr
Teil-Aliasnamen
IDH10G120C5 SP001079722
Gewichtseinheit
0.211644 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-2
Technologie
SiC
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
PG-TO220-2-1
Aufbau
Single
Geschwindigkeit
Fast Recovery = 200mA (Io)
Dioden-Typ
Siliziumkarbid Schottky
Strom-Rückwärts-Leckage-Vr
62μA @ 1200V
Spannung-Vorwärts-Uf-Max-If
1.8V @ 10A
Spannung-DC-Rückwärts-Vr-Max
1200V (1.2kV)
Strom-Durchschnitt-Gleichgerichtet-Io
10A (DC)
Reverse-Recovery-Time-trr
-
Kapazität-Vr-F
525pF @ 1V, 1MHz
Betriebstemperatur-Kreuzung
-55°C ~ 175°C
Pd-Verlustleistung
165 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Uf-Vorwärtsspannung
1.5 V
Vr-Rückwärtsspannung
1.2 kV
Ir-Gegenstrom
4 uA
If-Forward-Current
10 A
Vrrm-Repetitive-Reverse-Voltage
1.2 kV
Ifsm-Forward-Surge-Current
99 A
Tags
IDH10G, IDH10, IDH1, IDH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IDH10G120C5 Series 1200 V 10 A 5th Generation ThinQ!™SiC Schottky Diode-TO-220-2
***ical
Diode Schottky SiC 1.2KV 31.9A 2-Pin(2+Tab) TO-220 Tube
***ark
Sic Schottky Diode, 1.2Kv, 31.9A, To-220; Product Range:thinq Series; Diode Configuration:single; Repetitive Reverse Voltage Vrrm Max:1.2Kv; Continuous Forward Current If:31.9A; Total Capacitive Charge Qc:41Nc; Diode Case Rohs Compliant: Yes
***ineon
With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
Gen 5 1200V CoolSiC™ Schottky Diodes
Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage, and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
Teil # Mfg. Beschreibung Aktie Preis
IDH10G120C5XKSA1
DISTI # V99:2348_09156848
Infineon Technologies AGDiode Schottky 1.2KV 31.9A 2-Pin(2+Tab) TO-220 Tube390
  • 2500:$4.5280
  • 1000:$4.6940
  • 500:$5.2220
  • 250:$5.7450
  • 100:$6.0540
  • 25:$6.9540
  • 10:$7.3290
  • 1:$8.0990
IDH10G120C5XKSA1
DISTI # IDH10G120C5XKSA1-ND
Infineon Technologies AGDIODE SCHOTTKY 1200V 10A TO220-2
RoHS: Compliant
Min Qty: 1
Container: Tube
638In Stock
  • 500:$5.8621
  • 100:$6.7320
  • 50:$7.7530
  • 1:$9.0000
IDH10G120C5XKSA1
DISTI # 30552871
Infineon Technologies AGDiode Schottky 1.2KV 31.9A 2-Pin(2+Tab) TO-220 Tube390
  • 100:$6.2270
  • 10:$7.3960
  • 2:$8.0990
IDH10G120C5XKSA1
DISTI # IDH10G120C5XKSA1
Infineon Technologies AGDiode Schottky Diode 1200V 31.9A 2-Pin TO-220 Tube - Rail/Tube (Alt: IDH10G120C5XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$5.0900
  • 1000:$4.9900
  • 2000:$4.7900
  • 3000:$4.5900
  • 5000:$4.4900
IDH10G120C5XKSA1
DISTI # IDH10G120C5
Infineon Technologies AGDiode Schottky Diode 1200V 31.9A 2-Pin TO-220 Tube (Alt: IDH10G120C5)
RoHS: Compliant
Min Qty: 500
Container: Tube
Asia - 0
  • 500:$5.1456
  • 1000:$4.9341
  • 1500:$4.8674
  • 2500:$4.6778
  • 5000:$4.6178
  • 12500:$4.5024
  • 25000:$4.3926
IDH10G120C5XKSA1
DISTI # 12AC9655
Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 31.9A, TO-220,Product Range:thinQ Series,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:31.9A,Total Capacitive Charge Qc:41nC,Diode Case , RoHS Compliant: Yes539
  • 1:$8.5700
  • 10:$7.7500
  • 25:$7.3900
  • 50:$6.9100
  • 100:$6.4200
  • 250:$6.1300
  • 500:$5.5900
IDH10G120C5XKSA1Infineon Technologies AG 
RoHS: Not Compliant
20
  • 1000:$5.5300
  • 500:$5.8200
  • 100:$6.0600
  • 25:$6.3200
  • 1:$6.8100
IDH10G120C5XKSA1
DISTI # 726-IDH10G120C5XKSA1
Infineon Technologies AGSchottky Diodes & Rectifiers SIC CHIP/DISCRETE
RoHS: Compliant
931
  • 1:$8.5700
  • 10:$7.7500
  • 25:$7.3900
  • 100:$6.4200
  • 250:$6.1300
  • 500:$5.5900
  • 1000:$4.8700
IDH10G120C5XKSA1
DISTI # 1338556
Infineon Technologies AGSIC SCHOTTKY DIODE 1200V 10A TO-220-2, TU441
  • 500:£4.0170
  • 1000:£3.7780
IDH10G120C5XKSA1
DISTI # 2709915
Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 31.9A, TO-220
RoHS: Compliant
549
  • 1:£7.1000
  • 5:£6.5400
  • 10:£5.6500
  • 50:£5.2800
  • 100:£4.9100
IDH10G120C5XKSA1
DISTI # C1S322000579165
Infineon Technologies AGRectifier Diodes
RoHS: Compliant
390
  • 100:$6.2270
  • 10:$7.3960
  • 1:$8.0990
IDH10G120C5XKSA1
DISTI # 2709915
Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 31.9A, TO-220
RoHS: Compliant
529
  • 1:$14.2400
  • 50:$12.2700
  • 100:$10.6600
  • 500:$9.2800
Bild Teil # Beschreibung
IDH10G120C5XKSA1

Mfr.#: IDH10G120C5XKSA1

OMO.#: OMO-IDH10G120C5XKSA1

Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
IDH10G120C5XKSA1

Mfr.#: IDH10G120C5XKSA1

OMO.#: OMO-IDH10G120C5XKSA1-INFINEON-TECHNOLOGIES

Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von IDH10G120C5XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
6,59 $
6,59 $
10
6,26 $
62,59 $
100
5,93 $
593,00 $
500
5,60 $
2 800,25 $
1000
5,27 $
5 271,10 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
Top