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DMC4015SSD-13

DMC4015SSD-13
Mfr. #:
DMC4015SSD-13
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET Comp Pair Enh FET 40Vdss 20Vgss
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMC4015SSD-13 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
DMC4015SSD-13 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal, P-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
12.2 A, 8.8 A
Rds On - Drain-Source-Widerstand:
15 mOhms, 29 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
40 nC, 34 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.7 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
PowerDI
Verpackung:
Spule
Serie:
DMC4015
Transistortyp:
1 N-Channel, 1 P-Channel
Marke:
Eingebaute Dioden
Abfallzeit:
6.3 ns, 30 ns
Produktart:
MOSFET
Anstiegszeit:
5.7 ns, 2.8 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
23 ns, 83 ns
Typische Einschaltverzögerungszeit:
5.1 ns, 3.9 ns
Gewichtseinheit:
0.002610 oz
Tags
DMC40, DMC4, DMC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N & P-Channel 40V 8.6 A 15 mOhm Complementary Pair Enhancement Mode Mosfet -SO-8
***et Europe
Trans MOSFET N/P-CH 40V 8.6A/6.2A 8-Pin SO T/R
***ark
MOSFET, DUAL, N/P-CH, 40V, 8.6A ROHS COMPLIANT: YES
***i-Key
MOSFET N/P-CH 40V 8.6A/6.5A 8-SO
***ical
Trans MOSFET N-CH 30V 10A/7.2A Automotive 8-Pin SO T/R
***ure Electronics
MOSFET Dual N-Ch DIOFET VDSS 30V VGSS 20V
***nell
MOSFET,+SCH,NN CH,30V,SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 1.19W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel: 8A; Current Id Max: 7.2A; Drain Source Voltage Vds, N Channel: 30V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.0085ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
***emi
30 V, 10.2 A, 13.5 mOhm Single N-Channel Power MOSFET, SO-8
***Yang
Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R - Tape and Reel
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:10.2A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):13.5mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:2.4W ;RoHS Compliant: Yes
***et
Transistor MOSFET Array Dual N-CH 30V 9.1A 8-Pin DSO T/R
***ponent Stockers USA
7600 mA 30 V 2 CHANNEL N-CHANNEL Si SMALL SIGNAL MOSFET MS-012AA
***et Europe
Trans MOSFET N-CH 30V 7.6A 8-Pin DSO
***S
French Electronic Distributor since 1988
***ure Electronics
Single N-Channel 30 V 0.0175 Ohms Surface Mount Power Mosfet - SOIC-8
***ark
Dual Mosfet, Dual N Channel, 8 A, 30 V, 0.013 Ohm, 10 V, 2 V
***et Europe
Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R
***nell
MOSFET, N-CH, 30V, 8A, POWERPAKSO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.013ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 4.4W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C
***ure Electronics
Si4932DY Series Dual N-Channel 30 V 15 mOhms Surface Mount Power Mosfet-SOIC-8
***et Europe
Transistor MOSFET Array Dual N-CH 30V 8A 8-Pin SOIC T/R
***ark
DUAL N-CHANNEL 30-V (D-S) MOSFET
***Yang
Transistor MOSFET Array Dual N-CH 30V 7.5A 8-Pin SOIC T/R - Tape and Reel
***ure Electronics
N-Channel 30 V 18 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 7.5A, 18mΩ
***ark
TAPE REEL/30V,7.5A,18M OHM, DUAL,NCH POWER TRENCH MOSFET
***ment14 APAC
MOSFET, DUAL N CH, 30V, 7.5A, SOIC-8; Transistor Polarity:Dual Channel; Continuous Drain Current Id:7.5A; Source Voltage Vds:30V; On
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***nell
MOSFET, DUAL N CH, 30V, 7.5A, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 1.6W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
DMxx Enhancement Mode MOSFETs
Diode Inc. DMxx Enhancement Mode MOSFETs are designed to minimize on-state resistance (RDS(ON)). They maintain superior switching performance, making them ideal for high-efficiency power management applications. The DMN31D5UFZ and DMN2990UFZ are N-Channel enhancement mode MOSFETs and the DMP32D9UFZ is a P-Channel Enhancement Mode MOSFET.Learn More
Teil # Mfg. Beschreibung Aktie Preis
DMC4015SSD-13
DISTI # DMC4015SSD-13DITR-ND		Diodes IncorporatedMOSFET N/P-CH 40V 8.6A/6.5A 8-SO
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$0.4620
DMC4015SSD-13
DISTI # DMC4015SSD-13DICT-ND		Diodes IncorporatedMOSFET N/P-CH 40V 8.6A/6.5A 8-SO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.5099
  • 500:$0.6458
  • 100:$0.8328
  • 10:$1.0540
  • 1:$1.1900
DMC4015SSD-13
DISTI # DMC4015SSD-13DIDKR-ND		Diodes IncorporatedMOSFET N/P-CH 40V 8.6A/6.5A 8-SO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.5099
  • 500:$0.6458
  • 100:$0.8328
  • 10:$1.0540
  • 1:$1.1900
DMC4015SSD-13
DISTI # DMC4015SSD-13		Diodes IncorporatedTrans MOSFET N/P-CH 40V 8.6A/6.2A 8-Pin SO T/R - Tape and Reel (Alt: DMC4015SSD-13)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.3499
  • 5000:$0.3329
  • 10000:$0.3169
  • 15000:$0.3029
  • 25000:$0.2959
DMC4015SSD-13
DISTI # 621-DMC4015SSD-13		Diodes IncorporatedMOSFET Comp Pair Enh FET 40Vdss 20Vgss
RoHS: Compliant		191
  • 1:$0.9900
  • 10:$0.8400
  • 100:$0.6460
  • 500:$0.5710
  • 1000:$0.4500
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PCNM2512E1000BST5

Mfr.#: PCNM2512E1000BST5

OMO.#: OMO-PCNM2512E1000BST5

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LDO40LPURY

Mfr.#: LDO40LPURY

OMO.#: OMO-LDO40LPURY-STMICROELECTRONICS

 LOW DROW OUT REGULATOR
PGB1010603MR

Mfr.#: PGB1010603MR

OMO.#: OMO-PGB1010603MR-LITTELFUSE

 ESD Suppressors 0603 24VDC .06pF
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1990
Menge eingeben:
Der aktuelle Preis von DMC4015SSD-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,98 $
0,98 $
10
0,84 $
8,40 $
100
0,65 $
64,60 $
500
0,57 $
285,50 $
1000
0,45 $
450,00 $
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