HGTG20N60B3D

Mfr. #:: HGTG20N60B3D
Hersteller:: ON Semiconductor
Beschreibung:: IGBT 600V 40A 165W TO247
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: HGTG20N60B3D Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: Fairchild Semiconductor

Produktkategorie: IGBTs - Single

Serie: -

Verpackung: Rohr

Teil-Aliasnamen: HGTG20N60B3D_NL

Gewichtseinheit: 0.225401 oz

Montageart: Durchgangsloch

Paket-Koffer: TO-247-3

Eingabetyp: Standard

Befestigungsart: Durchgangsloch

Lieferanten-Geräte-Paket: TO-247

Aufbau: Single

Leistung max: 165W

Reverse-Recovery-Time-trr: 55ns

Strom-Kollektor-Ic-Max: 40A

Spannungs-Kollektor-Emitter-Breakdown-Max: 600V

IGBT-Typ: -

Strom-Kollektor-gepulster-Icm: 160A

Vce-on-Max-Vge-Ic: 2V @ 15V, 20A

Schaltenergie: 475μJ (on), 1.05mJ (off)

Gate-Gebühr: 80nC

Td-ein-aus-25°C: -

Testbedingung: -

Pd-Verlustleistung: 165 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 40 C

Kollektor-Emitter-Spannung-VCEO-Max: 600 V

Kollektor-Emitter-Sättigungsspannung: 1.8 V

Kontinuierlicher Kollektorstrom-bei-25-C: 20 A

Gate-Emitter-Leckstrom: +/- 100 nA

Maximale Gate-Emitter-Spannung: +/- 20 V

Kontinuierlicher Kollektor-Strom-Ic-Max: 40 A

Tags: HGTG20N60B3D, HGTG20N60B, HGTG20N6, HGTG20, HGTG2, HGTG, HGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGTG20N60B3D Beschreibung

***ical: Trans IGBT Chip N-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-247 Rail

***p One Stop Japan: Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247 Rail

***ure Electronics: HGTG20N60B3 Series 600 V 40 A Flange Mount UFS N-Channel IGBT-TO-247

***inecomponents.com: 600V,40A, UFS SERIES NCH IGBT W/ ANTI-PARALLEL HYPERFAST

***eco: @PWR IGBT UFS 20A 600V W/DIODE TF<200NS N-CH TO-247<AZ

***ser: IGBTs 600V, IGBT UFS N-Channel

***i-Key: IGBT N-CH UFS 600V 20A TO-247

***ark: Ptpigbt To247 40A 600V Rohs Compliant: Yes

*** Source Electronics: IGBT 600V 40A 165W TO247

***trelec: IGBT Housing type: TO-247 Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.1 V Current release time: 175 ns Power dissipation: 165 W

***Semiconductor: 600V, PT IGBT

***nell: IGBT, TO-247; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current Ic Continuous a Max:40A; Voltage, Vce Sat Max:2V; Power Dissipation:165W; Case Style:TO-247; Termination Type:Through Hole; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:160A; Device Marking:HGTG20N60B3D; No. of Pins:3; Pin Configuration:With flywheel diode; Power, Pd:165W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:200ns; Time, Rise:20ns; Transistors, No. of:1

***rchild Semiconductor: The HGTG20N60B3D is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

***ment14 APAC: IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:165W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:40A; Current Temperature:25°C; Device Marking:HGTG20N60B3D; Fall Time tf:200ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Configuration:With flywheel diode; Power Dissipation Max:165W; Power Dissipation Pd:165W; Power Dissipation Pd:165W; Pulsed Current Icm:160A; Rise Time:20ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
HGTG20N60B3D DISTI # V99:2348_06359331	ON Semiconductor	600V, UFS SERIES N-CHANNEL IGB	440	500:$2.6509 250:$2.9459 100:$3.2730 50:$3.6370 25:$4.0410 10:$4.4900 1:$5.7904
HGTG20N60B3D DISTI # V36:1790_06359331	ON Semiconductor	600V, UFS SERIES N-CHANNEL IGB	0	500:$2.4720 250:$2.9360 100:$2.9770 10:$4.1960 1:$4.8360
HGTG20N60B3D DISTI # HGTG20N60B3DFS-ND	ON Semiconductor	IGBT 600V 40A 165W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	1268In Stock	1350:$2.9537 900:$3.5022 450:$3.9031 10:$5.0210 1:$5.5900
HGTG20N60B3D DISTI # 32871385	ON Semiconductor	600V, UFS SERIES N-CHANNEL IGB	4438	300:$2.1355 150:$2.1895 90:$2.2176 60:$2.2464 30:$2.2611
HGTG20N60B3D DISTI # 26717730	ON Semiconductor	600V, UFS SERIES N-CHANNEL IGB	2700	1800:$2.5879 900:$2.6588 450:$2.9860
HGTG20N60B3D DISTI # 32653074	ON Semiconductor	600V, UFS SERIES N-CHANNEL IGB	440	500:$2.6509 250:$2.9459 100:$3.2730 50:$3.6370 25:$4.0410 10:$4.4900 3:$5.2640
HGTG20N60B3D DISTI # HGTG20N60B3D	ON Semiconductor	Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG20N60B3D) RoHS: Compliant Min Qty: 30 Container: Tube	Americas - 4	300:$2.1570 150:$2.2117 90:$2.2400 60:$2.2691 30:$2.2839
HGTG20N60B3D DISTI # HGTG20N60B3D	ON Semiconductor	Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG20N60B3D) RoHS: Compliant Min Qty: 450	Asia - 0	22500:$2.8643 11250:$2.9120 4500:$3.0124 2250:$3.1200 1350:$3.2356 900:$3.3600 450:$3.4944
HGTG20N60B3D DISTI # 58K8902	ON Semiconductor	Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8902) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	500:$4.2600 250:$4.7200 100:$4.9800 50:$5.2200 25:$5.4700 10:$5.7100 1:$6.6800
HGTG20N60B3D DISTI # 58K8902	ON Semiconductor	IGBT, TO-247,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:165W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:-RoHS Compliant: Yes	440	500:$3.8400 250:$4.2500 100:$4.4900 50:$4.7000 25:$4.9300 10:$5.1400 1:$6.0200
HGTG20N60B3D. DISTI # 27AC6330	Fairchild Semiconductor Corporation	PTPIGBT TO247 40A 600V ROHS COMPLIANT: YES	0	300:$2.8000 150:$2.8700 62:$2.9100 32:$2.9400 1:$2.9600
HGTG20N60B3D DISTI # 512-HGTG20N60B3D	ON Semiconductor	IGBT Transistors 600V IGBT UFS N-Channel RoHS: Compliant	809	1:$5.3100 10:$4.5200 100:$3.9100 250:$3.7100 500:$3.3300
HGTG20N60B3D_Q DISTI # 512-HGTG20N60B3D_Q	ON Semiconductor	IGBT Transistors 600V IGBT UFS N-Channel RoHS: Not compliant	0
HGTG20N60B3D	Harris Semiconductor	* FREE SHIPPING ORDERS OVER $100 * TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,40A I(C),TO-247	8	8:$2.6700 3:$3.5600 1:$5.3400
HGTG20N60B3D	Fairchild Semiconductor Corporation		250
HGTG20N60B3D	Fairchild Semiconductor Corporation	INSTOCK	60
HGTG20N60B3D DISTI # HGTG20N60B3D	ON Semiconductor	Transistor: IGBT,600V,20A,165W,TO247-3	99	1:$3.4100 3:$2.9300 10:$2.3600 30:$2.1200
HGTG20N60B3D DISTI # 9846603	ON Semiconductor	IGBT, TO-247 RoHS: Compliant	7093	500:$5.1300 250:$5.7100 100:$6.0100 10:$6.9500 1:$8.1600
HGTG20N60B3D DISTI # 9846603	ON Semiconductor	IGBT, TO-247	9551	500:£2.6400 250:£2.9500 100:£3.1000 10:£3.5900 1:£4.6800
HGTG20N60B3D	Fairchild Semiconductor Corporation	RoHS: Compliant	Europe - 150

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: HGTG20N60A4D OMO.#: OMO-HGTG20N60A4D	IGBT Transistors 600V
	Mfr.#: HGTG20N60C3D OMO.#: OMO-HGTG20N60C3D	Motor / Motion / Ignition Controllers & Drivers UFS 20A 600V N-Ch
	Mfr.#: HGTG20N60B3 OMO.#: OMO-HGTG20N60B3-ON-SEMICONDUCTOR	IGBT 600V 40A 165W TO247
	Mfr.#: HGTG20N120 OMO.#: OMO-HGTG20N120-1190	Neu und Original
	Mfr.#: HGTG20N120CND OMO.#: OMO-HGTG20N120CND-1190	Neu und Original
	Mfr.#: HGTG20N120E2 OMO.#: OMO-HGTG20N120E2-1190	Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-247
	Mfr.#: HGTG20N60A4D,20N60A4 OMO.#: OMO-HGTG20N60A4D-20N60A4-1190	Neu und Original
	Mfr.#: HGTG20N60C3 OMO.#: OMO-HGTG20N60C3-1190	- Bulk (Alt: HGTG20N60C3)
	Mfr.#: HGTG20N60C3DR OMO.#: OMO-HGTG20N60C3DR-1190	Neu und Original
	Mfr.#: HGTG20N60A4 20N60A4 OMO.#: OMO-HGTG20N60A4-20N60A4-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4000
Menge eingeben:

Der aktuelle Preis von HGTG20N60B3D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~3,18 $~~; ~~3,18 $~~

10: ~~3,02 $~~; ~~30,21 $~~

100: ~~2,86 $~~; ~~286,20 $~~

500: ~~2,70 $~~; ~~1 351,50 $~~

1000: ~~2,54 $~~; ~~2 544,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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HGTG20N60B3D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes