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SI2319DDS-T1-GE3

SI2319DDS-T1-GE3
Mfr. #:
SI2319DDS-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -40V Vds 20V Vgs SOT-23
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2319DDS-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2319DDS-T1-GE3 DatasheetSI2319DDS-T1-GE3 Datasheet (P4-P6)SI2319DDS-T1-GE3 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
3.6 A
Rds On - Drain-Source-Widerstand:
75 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
12.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.7 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Transistortyp:
1 P-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
10 S
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
20 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns
Typische Einschaltverzögerungszeit:
10 ns
Tags
SI2319D, SI2319, SI231, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
SI2319DDS-T1-GE3
DISTI # V72:2272_21764897		Vishay IntertechnologiesSI2319DDS-T1-GE35630
  • 3000:$0.1560
  • 1000:$0.1794
  • 500:$0.2252
  • 250:$0.2765
  • 100:$0.2879
  • 25:$0.3815
  • 10:$0.4240
  • 1:$0.5517
SI2319DDS-T1-GE3
DISTI # SI2319DDS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CHAN 40V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4094In Stock
  • 1000:$0.1986
  • 500:$0.2570
  • 100:$0.3270
  • 10:$0.4380
  • 1:$0.5100
SI2319DDS-T1-GE3
DISTI # SI2319DDS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CHAN 40V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4094In Stock
  • 1000:$0.1986
  • 500:$0.2570
  • 100:$0.3270
  • 10:$0.4380
  • 1:$0.5100
SI2319DDS-T1-GE3
DISTI # SI2319DDS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CHAN 40V
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 30000:$0.1512
  • 15000:$0.1531
  • 6000:$0.1644
  • 3000:$0.1758
SI2319DDS-T1-GE3
DISTI # 31593586		Vishay IntertechnologiesSI2319DDS-T1-GE36000
  • 6000:$0.1930
SI2319DDS-T1-GE3
DISTI # 31602819		Vishay IntertechnologiesSI2319DDS-T1-GE35630
  • 3000:$0.1677
  • 1000:$0.2020
  • 500:$0.2421
  • 250:$0.2975
  • 100:$0.3095
  • 47:$0.4101
SI2319DDS-T1-GE3
DISTI # SI2319DDS-T1-GE3		Vishay IntertechnologiesP-CHANNEL 40 V (D-S) MOSFET - Tape and Reel (Alt: SI2319DDS-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.1379
  • 30000:$0.1419
  • 18000:$0.1459
  • 12000:$0.1519
  • 6000:$0.1569
SI2319DDS-T1-GE3
DISTI # 59AC7475		Vishay IntertechnologiesP-CHANNEL 40-V (D-S) MOSFET0
  • 50000:$0.1400
  • 30000:$0.1460
  • 20000:$0.1570
  • 10000:$0.1680
  • 5000:$0.1820
  • 1:$0.1860
SI2319DDS-T1-GE3
DISTI # 78AC6536		Vishay IntertechnologiesMOSFET, P-CH, -40V, -3.6A, 150DEG C,Transistor Polarity:P Channel,Continuous Drain Current Id:-3.6A,Drain Source Voltage Vds:-40V,On Resistance Rds(on):0.062ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power RoHS Compliant: Yes2750
  • 1000:$0.1860
  • 500:$0.2400
  • 250:$0.2670
  • 100:$0.2930
  • 50:$0.3270
  • 25:$0.3600
  • 10:$0.3940
  • 1:$0.5150
SI2319DDS-T1-GE3
DISTI # 78-SI2319DDS-T1-GE3		Vishay IntertechnologiesMOSFET -40V Vds 20V Vgs SOT-23
RoHS: Compliant		7163
  • 1:$0.5100
  • 10:$0.3890
  • 100:$0.2890
  • 500:$0.2370
  • 1000:$0.1830
  • 3000:$0.1670
  • 6000:$0.1560
  • 9000:$0.1450
  • 24000:$0.1380
SI2319DDS-T1-GE3
DISTI # 1783663		Vishay IntertechnologiesP-CHANNEL 40-V (D-S) MOSFET SOT-23 1G, RL3150
  • 3000:£0.1200
SI2319DDS-T1-GE3
DISTI # 2932885		Vishay IntertechnologiesMOSFET, P-CH, -40V, -3.6A, 150DEG C2630
  • 500:£0.1750
  • 250:£0.1940
  • 100:£0.2120
  • 25:£0.3070
  • 5:£0.3240
SI2319DDS-T1-GE3
DISTI # 2932885		Vishay IntertechnologiesMOSFET, P-CH, -40V, -3.6A, 150DEG C
RoHS: Compliant		2630
  • 1000:$0.2560
  • 500:$0.2710
  • 250:$0.3190
  • 100:$0.3880
  • 25:$0.4950
  • 5:$0.5980
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ESP32-WROOM-32U

Mfr.#: ESP32-WROOM-32U

OMO.#: OMO-ESP32-WROOM-32U-ESPRESSIF-SYSTEMS

 WIFI MODULE 32MBITS SPI FLASH
SN74AHC1G08DCK3

Mfr.#: SN74AHC1G08DCK3

OMO.#: OMO-SN74AHC1G08DCK3-TEXAS-INSTRUMENTS

 LOGIC GATES AND INVERTERS
2N7002

Mfr.#: 2N7002

OMO.#: OMO-2N7002-ON-SEMICONDUCTOR

 MOSFET N-CH 60V 115MA SOT-23
AC0603JR-130RL

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OMO.#: OMO-AC0603JR-130RL-433

 Res Thick Film 0603 0 Ohm Epoxy Pad SMD Automotive T/R
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1990
Menge eingeben:
Der aktuelle Preis von SI2319DDS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,51 $
0,51 $
10
0,39 $
3,89 $
100
0,29 $
28,90 $
500
0,24 $
118,50 $
1000
0,18 $
183,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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