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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RFD20N03SM9A DISTI # 512-RFD20N03SM9A | ON Semiconductor | MOSFET 30V Single RoHS: Not compliant | 0 | |
| RFD20N03SM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 4911 |
|
| RFD20N03SM9AR4770 | Fairchild Semiconductor Corporation | RoHS: Not Compliant | 1578 |
|
| RFD20N03SM | Harris Semiconductor | Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 8441 |
|
| RFD20N03SM9A | Harris Semiconductor | Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 2500 |
|
| RFD20N03SM9AR4761 | Harris Semiconductor | RoHS: Not Compliant | 2500 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: RFD20N03 OMO.#: OMO-RFD20N03-1190 |
Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
|
Mfr.#: RFD20N03SM OMO.#: OMO-RFD20N03SM-1190 |
Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
|
Mfr.#: RFD20N03SM9A OMO.#: OMO-RFD20N03SM9A-1190 |
MOSFET 30V Single |
|
|
Mfr.#: RFD20N03SM9AR4770 OMO.#: OMO-RFD20N03SM9AR4770-1190 |
Neu und Original |
