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IPB035N08N3GATMA1

IPB035N08N3GATMA1
Mfr. #:
IPB035N08N3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 80V 100A D2PAK-2 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB035N08N3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
2.8 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
117 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
214 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
75 S
Abfallzeit:
14 ns
Produktart:
MOSFET
Anstiegszeit:
79 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
45 ns
Typische Einschaltverzögerungszeit:
23 ns
Teil # Aliase:
G IPB035N08N3 IPB35N8N3GXT SP000457588
Gewichtseinheit:
0.139332 oz
Tags
IPB035N08N3G, IPB035, IPB03, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ow.cn
Trans MOSFET N-CH 80V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
***ark
MOSFET, N-CH, 80V, 100A, 175DEG C, 214W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 80V, 100A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 214W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
Teil # Mfg. Beschreibung Aktie Preis
IPB035N08N3GATMA1
DISTI # IPB035N08N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2000In Stock
  • 500:$2.2079
  • 100:$2.7266
  • 10:$3.3250
  • 1:$3.7200
IPB035N08N3GATMA1
DISTI # IPB035N08N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2000In Stock
  • 500:$2.2079
  • 100:$2.7266
  • 10:$3.3250
  • 1:$3.7200
IPB035N08N3GATMA1
DISTI # IPB035N08N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 1000:$1.8078
IPB035N08N3GATMA1
DISTI # SP000457588		Infineon Technologies AGTrans MOSFET N-CH 80V 100A 3-Pin TO-263 T/R (Alt: SP000457588)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€1.8900
  • 2000:€1.4900
  • 4000:€1.3900
  • 6000:€1.2900
  • 10000:€1.1900
IPB035N08N3GXT
DISTI # IPB035N08N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 80V 100A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB035N08N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.5900
  • 2000:$1.5900
  • 4000:$1.4900
  • 6000:$1.4900
  • 10000:$1.3900
IPB035N08N3GATMA1
DISTI # 13AC9026		Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes2
  • 500:$1.9500
  • 250:$2.1800
  • 100:$2.2900
  • 50:$2.4100
  • 25:$2.5300
  • 10:$2.6500
  • 1:$3.1100
IPB035N08N3 G
DISTI # 726-IPB035N08N3G		Infineon Technologies AGMOSFET N-Ch 80V 100A D2PAK-2 OptiMOS 3
RoHS: Compliant		32
  • 1:$3.1000
  • 10:$2.6400
  • 100:$2.2900
  • 250:$2.1700
  • 500:$1.9400
  • 1000:$1.6400
  • 2000:$1.5600
  • 5000:$1.5000
IPB035N08N3GATMA1
DISTI # 726-IPB035N08N3GATMA		Infineon Technologies AGMOSFET N-Ch 80V 100A D2PAK-2 OptiMOS 3
RoHS: Compliant		0
  • 1:$3.1000
  • 10:$2.6400
  • 100:$2.2900
  • 250:$2.1700
  • 500:$1.9400
  • 1000:$1.6400
  • 2000:$1.5600
  • 5000:$1.5000
IPB035N08N3GATMA1
DISTI # 2725839		Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TO-263
RoHS: Compliant		2
  • 500:$3.5000
  • 100:$4.3200
  • 10:$5.2700
  • 1:$5.9000
IPB035N08N3GATMA1
DISTI # 2725839		Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TO-263
RoHS: Compliant		56
  • 100:£1.9900
  • 10:£2.1500
  • 1:£2.9000
Bild Teil # Beschreibung
SI7489DP-T1-GE3

Mfr.#: SI7489DP-T1-GE3

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BSB056N10NN3 G

Mfr.#: BSB056N10NN3 G

OMO.#: OMO-BSB056N10NN3-G

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MBRS1100T3G

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LT8620EMSE#PBF

Mfr.#: LT8620EMSE#PBF

OMO.#: OMO-LT8620EMSE-PBF

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C0603C105K3PACTU

Mfr.#: C0603C105K3PACTU

OMO.#: OMO-C0603C105K3PACTU

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 1uF 25V X5R 10%
RC0603FR-071ML

Mfr.#: RC0603FR-071ML

OMO.#: OMO-RC0603FR-071ML

 Thick Film Resistors - SMD 1M OHM 1%
0679L9200-05

Mfr.#: 0679L9200-05

OMO.#: OMO-0679L9200-05

 Surface Mount Fuses 20 A, 125 VAC / VDC
SI7489DP-T1-GE3

Mfr.#: SI7489DP-T1-GE3

OMO.#: OMO-SI7489DP-T1-GE3-VISHAY

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2N7002

Mfr.#: 2N7002

OMO.#: OMO-2N7002-ON-SEMICONDUCTOR

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Verfügbarkeit
Aktie:
982
Auf Bestellung:
2965
Menge eingeben:
Der aktuelle Preis von IPB035N08N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,10 $
3,10 $
10
2,64 $
26,40 $
100
2,29 $
229,00 $
250
2,17 $
542,50 $
500
1,94 $
970,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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