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FQP8N60C

FQP8N60C
Mfr. #:
FQP8N60C
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 600V N-Ch Q-FET advance C-Series
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQP8N60C Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
7.5 A
Rds On - Drain-Source-Widerstand:
1.2 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
147 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Serie:
FQP8N60C
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
8.7 S
Abfallzeit:
64.5 ns
Produktart:
MOSFET
Anstiegszeit:
60.5 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
81 ns
Typische Einschaltverzögerungszeit:
16.5 ns
Teil # Aliase:
FQP8N60C_NL
Gewichtseinheit:
0.063493 oz
Tags
FQP8N60C, FQP8N60, FQP8N6, FQP8N, FQP8, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET, N-Channel, QFET®, 600 V, 7.5 A, 1.2 Ω, TO-220
***ical
Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Rail
***enic
600V 7.5A 147W 1.2´Î@10V3.75A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:147W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.5A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:1.2ohm; Package / Case:TO-220; Power Dissipation Pd:147W; Power Dissipation Pd:147W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Teil # Mfg. Beschreibung Aktie Preis
FQP8N60C
DISTI # FQP8N60C-ND		ON SemiconductorMOSFET N-CH 600V 7.5A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		1000In Stock
  • 1000:$1.0170
  • 500:$1.2274
  • 100:$1.5781
  • 10:$1.9640
  • 1:$2.1700
FQP8N60C
DISTI # FQP8N60C		ON SemiconductorTrans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP8N60C)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.7599
  • 2000:$0.7559
  • 4000:$0.7459
  • 6000:$0.7359
  • 10000:$0.7179
FQP8N60C
DISTI # 97K0198		ON SemiconductorMOSFET, N, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:7.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:147W,MSL:- , RoHS Compliant: Yes0
  • 1:$1.8700
  • 10:$1.5900
  • 100:$1.2700
  • 500:$1.1100
  • 1000:$0.9250
  • 2500:$0.8610
  • 5000:$0.8290
FQP8N60CFairchild Semiconductor CorporationPower Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		43736
  • 1000:$1.0600
  • 500:$1.1200
  • 100:$1.1600
  • 25:$1.2100
  • 1:$1.3000
FQP8N60C
DISTI # 512-FQP8N60C		ON SemiconductorMOSFET 600V N-Ch Q-FET advance C-Series
RoHS: Compliant		926
  • 1:$1.8700
  • 10:$1.5900
  • 100:$1.2700
  • 500:$1.1100
  • 1000:$0.9250
  • 2000:$0.8610
  • 5000:$0.8290
  • 10000:$0.7970
FQP8N60C_Q
DISTI # 512-FQP8N60C_Q		ON SemiconductorMOSFET 600V N-Ch Q-FET advance C-Series
RoHS: Not compliant		0
    FQP8N60C
    DISTI # 1095074    		ON SemiconductorMOSFET, N, TO-220
    RoHS: Compliant    		47
    • 5:£1.1600
    • 25:£1.0600
    • 100:£0.8100
    • 250:£0.7630
    • 500:£0.7160
    FQP8N60C
    DISTI # 1095074    		ON SemiconductorMOSFET, N, TO-220
    RoHS: Compliant    		52
    • 1:$1.5100
    FQP8N60C
    DISTI # XSFP00000021118    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		3365
    • 1000:$1.8700
    • 3365:$1.7000
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    Verfügbarkeit
    Aktie:
    635
    Auf Bestellung:
    2618
    Menge eingeben:
    Der aktuelle Preis von FQP8N60C dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,86 $
    1,86 $
    10
    1,58 $
    15,80 $
    100
    1,27 $
    127,00 $
    500
    1,10 $
    550,00 $
    1000
    0,92 $
    920,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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