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IPB033N10N5LFATMA1

IPB033N10N5LFATMA1
Mfr. #:
IPB033N10N5LFATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 100V D2PAK-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB033N10N5LFATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPB03, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 100V D2PAK-3
***p One Stop Japan
Trans MOSFET N-CH 100V 120A
***et
MOS Power Transistors LV ( 41V-100V)
***ark
Mosfet, N-Ch, 100V, 120A, 179W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0027Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 120A, 179W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:179W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN N, 100V, 120A, 179W, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0027ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.3V; Dissipazione di Potenza Pd:179W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. | Summary of Features: Combination of low R DS(on) and wide safe operating area (SOA); High max. pulse current; High continuous pulse current | Benefits: Rugged linear mode operation; Low conduction losses; Higher in-rush current enabled for faster start-up and shorter down time | Target Applications: Telecom; Battery management
Teil # Mfg. Beschreibung Aktie Preis
IPB033N10N5LFATMA1
DISTI # V72:2272_17076760		Infineon Technologies AGDIFFERENTIATED MOSFETS486
  • 250:$3.3280
  • 100:$3.6060
  • 25:$4.0540
  • 10:$4.1280
  • 1:$4.7760
IPB033N10N5LFATMA1
DISTI # V36:1790_17076760		Infineon Technologies AGDIFFERENTIATED MOSFETS0
    IPB033N10N5LFATMA1
    DISTI # IPB033N10N5LFATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 100V D2PAK-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		421In Stock
    • 500:$3.6824
    • 100:$4.5475
    • 10:$5.5460
    • 1:$6.2100
    IPB033N10N5LFATMA1
    DISTI # IPB033N10N5LFATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 100V D2PAK-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		421In Stock
    • 500:$3.6824
    • 100:$4.5475
    • 10:$5.5460
    • 1:$6.2100
    IPB033N10N5LFATMA1
    DISTI # IPB033N10N5LFATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 100V D2PAK-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 1000:$3.0152
    IPB033N10N5LFATMA1
    DISTI # 26196750    		Infineon Technologies AGDIFFERENTIATED MOSFETS486
    • 250:$3.5776
    • 100:$3.8765
    • 25:$4.3581
    • 10:$4.4376
    • 3:$5.1342
    IPB033N10N5LFATMA1
    DISTI # SP001503858    		Infineon Technologies AGMOS Power Transistors LV ( 41V-100V) (Alt: SP001503858)
    RoHS: Compliant
    Min Qty: 1000    		Europe - 126
    • 1000:€2.5900
    • 2000:€2.4900
    • 4000:€2.3900
    • 6000:€2.1900
    • 10000:€2.0900
    IPB033N10N5LFATMA1
    DISTI # IPB033N10N5LFATMA1    		Infineon Technologies AGMOS Power Transistors LV ( 41V-100V) - Tape and Reel (Alt: IPB033N10N5LFATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 1000:$2.7900
    • 2000:$2.6900
    • 4000:$2.5900
    • 6000:$2.4900
    • 10000:$2.3900
    IPB033N10N5LFATMA1
    DISTI # 93AC7099    		Infineon Technologies AGMOSFET, N-CH, 100V, 120A, 179W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.3V,Power RoHS Compliant: Yes710
    • 500:$2.6000
    • 250:$2.9000
    • 100:$3.0500
    • 50:$3.2100
    • 25:$3.3600
    • 10:$3.5200
    • 1:$4.1400
    IPB033N10N5LFATMA1
    DISTI # 726-IPB033N10N5LFATM    		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
    RoHS: Compliant    		2098
    • 1:$5.1800
    • 10:$4.4000
    • 100:$3.8100
    • 250:$3.6200
    • 500:$3.2500
    • 1000:$2.7400
    • 2000:$2.6000
    IPB033N10N5LFATMA1
    DISTI # 2986457    		Infineon Technologies AGMOSFET, N-CH, 100V, 120A, 179W, TO-263
    RoHS: Compliant    		700
    • 500:£2.4600
    • 250:£2.8100
    • 100:£2.9600
    • 10:£3.4300
    • 1:£4.4600
    IPB033N10N5LFATMA1
    DISTI # 2986457    		Infineon Technologies AGMOSFET, N-CH, 100V, 120A, 179W, TO-263
    RoHS: Compliant    		700
    • 1000:$3.7800
    • 500:$4.2300
    • 250:$4.6700
    • 100:$4.9300
    • 10:$5.6200
    • 1:$7.1600
    Bild Teil # Beschreibung
    IPB033N10N5LFATMA1

    Mfr.#: IPB033N10N5LFATMA1

    OMO.#: OMO-IPB033N10N5LFATMA1

    		 MOSFET DIFFERENTIATED MOSFETS
    IPB033N10N5LFATMA1

    Mfr.#: IPB033N10N5LFATMA1

    OMO.#: OMO-IPB033N10N5LFATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 100V D2PAK-3
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von IPB033N10N5LFATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,56 $
    3,56 $
    10
    3,38 $
    33,84 $
    100
    3,21 $
    320,63 $
    500
    3,03 $
    1 514,05 $
    1000
    2,85 $
    2 850,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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