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IPB60R600CP

IPB60R600CP
Mfr. #:
IPB60R600CP
Hersteller:
Rochester Electronics, LLC
Beschreibung:
IGBT Transistors MOSFET N-Ch 600V 6.1A D2PAK-2 CoolMOS CP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB60R600CP Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
INFINEON
Produktkategorie
FETs - Einzeln
Serie
CoolMOS CP
Verpackung
Spule
Teil-Aliasnamen
IPB60R600CPATMA1 SP000405892
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Handelsname
CoolMOS
Paket-Koffer
TO-252-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
60 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
17 ns
Anstiegszeit
12 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
6.1 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
3.5 V
Rds-On-Drain-Source-Widerstand
600 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
75 ns
Typische-Einschaltverzögerungszeit
17 ns
Qg-Gate-Ladung
21 nC
Kanal-Modus
Erweiterung
Tags
IPB60R600C, IPB60R6, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 650V 6.1A 3-Pin TO-263 T/R
***i-Key
MOSFET N-CH 600V 6.1A TO263
***ark
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:6.1A; On State Resistance:0.6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:650V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:6.1A; Package / Case:TO-263; Power Dissipation Pd:60W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6.1A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.54ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:60W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:6.1A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:650V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Dispositivo a Montaggio Superficiale; Tipo di Transistor:Power MOSFET
Teil # Mfg. Beschreibung Aktie Preis
IPB60R600CPATMA1
DISTI # IPB60R600CPATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V 6.1A TO263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB60R600CPATMA1
    DISTI # IPB60R600CPATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 600V 6.1A TO263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPB60R600CPATMA1
      DISTI # IPB60R600CPATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 600V 6.1A TO263
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPB60R600CPInfineon Technologies AGPower Field-Effect Transistor, 6.1A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
        RoHS: Compliant        		6970
        • 1000:$0.7100
        • 500:$0.7400
        • 100:$0.7700
        • 25:$0.8100
        • 1:$0.8700
        IPB60R600CP
        DISTI # 726-IPB60R600CP        		Infineon Technologies AGMOSFET N-Ch 600V 6.1A D2PAK-2 CoolMOS CP
        RoHS: Compliant        		874
        • 1:$2.0800
        • 10:$1.6100
        • 100:$1.4600
        • 250:$1.3100
        • 500:$1.1300
        • 1000:$0.9540
        • 2000:$0.7930
        • 5000:$0.7750
        • 10000:$0.7460
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        Mfr.#: IPB600N25N3 G

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        Mfr.#: IPB60R380C6 .

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        		 Neu und Original
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        Mfr.#: IPB60R380C6S

        OMO.#: OMO-IPB60R380C6S-1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        3500
        Menge eingeben:
        Der aktuelle Preis von IPB60R600CP dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        1,06 $
        1,06 $
        10
        1,01 $
        10,12 $
        100
        0,96 $
        95,85 $
        500
        0,91 $
        452,65 $
        1000
        0,85 $
        852,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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