2N6520BU

2N6520BU
Mfr. #:
2N6520BU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2N6520BU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-92-3
Polarität des Transistors:
PNP
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
- 350 V
Kollektor- Basisspannung VCBO:
- 350 V
Emitter- Basisspannung VEBO:
- 5 V
Kollektor-Emitter-Sättigungsspannung:
- 1 V
Maximaler DC-Kollektorstrom:
0.5 A
Bandbreitenprodukt fT gewinnen:
200 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
2N6520
DC-Stromverstärkung hFE Max:
200
Höhe:
5.33 mm
Länge:
5.2 mm
Verpackung:
Schüttgut
Breite:
4.19 mm
Marke:
ON Semiconductor / Fairchild
Kontinuierlicher Kollektorstrom:
- 0.5 A
DC-Kollektor/Basisverstärkung hfe Min:
30
Pd - Verlustleistung:
625 mW
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
1000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.006286 oz
Tags
2N6520, 2N652, 2N65, 2N6
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
High Voltage PNP Bipolar Transistor
***i-Key
TRANS PNP 350V 0.5A TO-92
***ark
Transistor; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:-350V; Continuous Collector Current, Ic:-500mA; Collector Emitter Saturation Voltage, Vce(sat):-1V; Power Dissipation, Pd:625mW ;RoHS Compliant: Yes
***nell
TRANSISTOR, BJT, PNP; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:-350V; Current Ic Continuous a Max:-500mA; Voltage, Vce Sat Max:-1V; Power Dissipation:0.625W; Min Hfe:15; ft, Typ:200MHz; Case Style:TO-92; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C
***ment14 APAC
TRANSISTOR, BJT, PNP; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-350V; Power Dissipation Pd:625mW; DC Collector Current:-500mA; DC Current Gain hFE:30; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Collector Emitter Voltage Vces:-1V; Current Ic Continuous a Max:-500mA; Gain Bandwidth ft Typ:200MHz; Hfe Min:15; Package / Case:TO-92; Power Dissipation Pd:625mW; Termination Type:Through Hole
Teil # Mfg. Beschreibung Aktie Preis
2N6520BU
DISTI # 2N6520BU-ND
ON SemiconductorTRANS PNP 350V 0.5A TO-92
RoHS: Compliant
Min Qty: 20000
Container: Bulk
Limited Supply - Call
    2N6520BU
    DISTI # 512-2N6520BU
    ON SemiconductorBipolar Transistors - BJT PNP Si Transistor Epitaxial
    RoHS: Compliant
    0
      2N6520BUFairchild Semiconductor Corporation*** FREE SHIPPING ORDERS OVER $100 *** SMALL SIGNAL BIPOLAR TRANSISTOR, 0.5A I(C), 350V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-9229
        2N6520BU
        DISTI # 1653589
        ON Semiconductor 
        RoHS: Compliant
        0
        • 1000:$0.0410
        • 500:$0.0450
        • 250:$0.0540
        • 100:$0.0730
        • 25:$0.1410
        • 1:$0.1850
        Bild Teil # Beschreibung
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        Mfr.#: 2N6520BU

        OMO.#: OMO-2N6520BU-ON-SEMICONDUCTOR

        TRANS PNP 350V 0.5A TO-92
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        Mfr.#: 2N652A

        OMO.#: OMO-2N652A-1190

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        Mfr.#: 2N6518BU

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        TRANS PNP 250V 0.5A TO-92
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1000
        Menge eingeben:
        Der aktuelle Preis von 2N6520BU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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