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IPB019N06L3 G

IPB019N06L3 G
Mfr. #:
IPB019N06L3 G
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB019N06L3 G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB019N06L3 G Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
120 A
Rds On - Drain-Source-Widerstand:
1.6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
166 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
250 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
113 S
Abfallzeit:
38 ns
Produktart:
MOSFET
Anstiegszeit:
79 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
131 ns
Typische Einschaltverzögerungszeit:
35 ns
Teil # Aliase:
IPB019N06L3GATMA1 IPB19N6L3GXT SP000453020
Gewichtseinheit:
0.068654 oz
Tags
IPB019N06L3G, IPB019N06L3, IPB019N06L, IPB019N06, IPB019, IPB01, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPB019N06L3GATMA1
DISTI # V72:2272_06377428		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		977
  • 500:$2.5240
  • 250:$2.8110
  • 100:$2.9590
  • 25:$3.0720
  • 10:$3.4130
  • 1:$4.4143
IPB019N06L3GATMA1
DISTI # V36:1790_06377428		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$1.8500
  • 500000:$1.8520
  • 100000:$1.9880
  • 10000:$2.2080
  • 1000:$2.2440
IPB019N06L3GATMA1
DISTI # IPB019N06L3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1792In Stock
  • 500:$2.7405
  • 100:$3.2193
  • 10:$3.9290
  • 1:$4.3700
IPB019N06L3GATMA1
DISTI # IPB019N06L3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1792In Stock
  • 500:$2.7405
  • 100:$3.2193
  • 10:$3.9290
  • 1:$4.3700
IPB019N06L3GATMA1
DISTI # IPB019N06L3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 2000:$2.1318
  • 1000:$2.2440
IPB019N06L3GATMA1
DISTI # 33709822		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		977
  • 3:$4.4143
IPB019N06L3 G
DISTI # 31073238		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263
RoHS: Compliant		78
  • 5:$5.2375
IPB019N06L3GXT
DISTI # IPB019N06L3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB019N06L3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.8900
  • 10000:$1.8900
  • 4000:$1.9900
  • 1000:$2.0900
  • 2000:$2.0900
IPB019N06L3GATMA1
DISTI # SP000453020		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP000453020)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€1.5900
  • 6000:€1.6900
  • 2000:€1.8900
  • 4000:€1.8900
  • 1000:€1.9900
IPB019N06L3GATMA1
DISTI # 47Y8046		Infineon Technologies AGMOSFET Transistor, N Channel, 120 A, 60 V, 0.0016 ohm, 10 V, 1.7 V RoHS Compliant: Yes0
    IPB019N06L3 G
    DISTI # 726-IPB019N06L3G    		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		1050
    • 1:$4.0400
    • 10:$3.4300
    • 100:$2.9700
    • 250:$2.8200
    • 500:$2.5300
    • 1000:$2.1300
    • 2000:$2.0300
    IPB019N06L3GATMA1
    DISTI # 726-IPB019N06L3GATMA    		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		1639
    • 1:$4.0400
    • 10:$3.4300
    • 100:$2.9700
    • 250:$2.8200
    • 500:$2.5300
    • 1000:$2.1300
    • 2000:$2.0300
    IPB019N06L3GATMA1
    DISTI # 8275293P    		Infineon Technologies AGMOSFET N-CH 120A 60V OPTIMOS3 TO263, RL1440
    • 100:£2.0380
    • 50:£2.3480
    IPB019N06L3GATMA1
    DISTI # IPB019N06L3GATMA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,120A,250W,PG-TO263-3683
    • 100:$2.4550
    • 10:$2.8267
    • 3:$3.1983
    • 1:$3.5474
    IPB019N06L3GATMA1
    DISTI # 2443430    		Infineon Technologies AGMOSFET, N CH, 60V, 120A, TO-263-3
    RoHS: Compliant    		0
    • 1000:$3.2100
    • 500:$3.8100
    • 250:$4.2500
    • 100:$4.4800
    • 10:$5.1700
    • 1:$6.0900
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von IPB019N06L3 G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    4,04 $
    4,04 $
    10
    3,43 $
    34,30 $
    100
    2,97 $
    297,00 $
    250
    2,82 $
    705,00 $
    500
    2,53 $
    1 265,00 $
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